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GB1188603A - Shunt Transistor Voltage or Current Regulating System for Saturable Core Reactors and Magnetic Amplifiers - Google Patents

Shunt Transistor Voltage or Current Regulating System for Saturable Core Reactors and Magnetic Amplifiers

Info

Publication number
GB1188603A
GB1188603A GB04227/68A GB1422768A GB1188603A GB 1188603 A GB1188603 A GB 1188603A GB 04227/68 A GB04227/68 A GB 04227/68A GB 1422768 A GB1422768 A GB 1422768A GB 1188603 A GB1188603 A GB 1188603A
Authority
GB
United Kingdom
Prior art keywords
current
voltage
transistor
transductor
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB04227/68A
Inventor
Alfred Max Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB04227/68A priority Critical patent/GB1188603A/en
Publication of GB1188603A publication Critical patent/GB1188603A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/12—Regulating voltage or current  wherein the variable actually regulated by the final control device is AC
    • G05F1/32—Regulating voltage or current  wherein the variable actually regulated by the final control device is AC using magnetic devices having a controllable degree of saturation as final control devices
    • G05F1/34—Regulating voltage or current  wherein the variable actually regulated by the final control device is AC using magnetic devices having a controllable degree of saturation as final control devices combined with discharge tubes or semiconductor devices
    • G05F1/38—Regulating voltage or current  wherein the variable actually regulated by the final control device is AC using magnetic devices having a controllable degree of saturation as final control devices combined with discharge tubes or semiconductor devices semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Rectifiers (AREA)

Abstract

1,188,603. Automatic control of voltage and current. AM. HASE. March 25, 1968, No.14227/68. Heading G3R. A regulated power supply comprises an A.C. source 10 which is connected over a transductor 12 to a rectifier 14 providing a D.C. output for connection to a load, e.g. a battery to be charged, the control winding 20 of the transductor being connected in parallel with a transistor 22 and the parallel combination being connected in series with a resistor 18 across the said D.C. output; variations in the output voltage are detected by a sensing circuit including a voltage divider 16 and a Zener diode 26 connected to the base of transistor 22, the arrangement being such that the current in the winding 20, and thus the operation of the transductor 12, is automatically controlled so as to correct for the detected variations. The sensing circuit may include an amplifier, a bridge sensing network and a differential error detector, such modifications being described with reference to Figs.2 to 6 (not shown). The control current may be derived from an auxiliary supply source Fig.7 (not shown), and the shunt transistor 22 may be replaced by a uni-junction transistor or thyristor with suitable modification of the control circuit. The sensing circuit may be arranged to detect a current-dependant voltage whereby current, rather than voltage, is maintained constant.
GB04227/68A 1968-03-25 1968-03-25 Shunt Transistor Voltage or Current Regulating System for Saturable Core Reactors and Magnetic Amplifiers Expired GB1188603A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB04227/68A GB1188603A (en) 1968-03-25 1968-03-25 Shunt Transistor Voltage or Current Regulating System for Saturable Core Reactors and Magnetic Amplifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB04227/68A GB1188603A (en) 1968-03-25 1968-03-25 Shunt Transistor Voltage or Current Regulating System for Saturable Core Reactors and Magnetic Amplifiers

Publications (1)

Publication Number Publication Date
GB1188603A true GB1188603A (en) 1970-04-22

Family

ID=10037342

Family Applications (1)

Application Number Title Priority Date Filing Date
GB04227/68A Expired GB1188603A (en) 1968-03-25 1968-03-25 Shunt Transistor Voltage or Current Regulating System for Saturable Core Reactors and Magnetic Amplifiers

Country Status (1)

Country Link
GB (1) GB1188603A (en)

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees