GB1153535A - Bath and Process for Electrolytically Etching Indium Arsenide - Google Patents
Bath and Process for Electrolytically Etching Indium ArsenideInfo
- Publication number
- GB1153535A GB1153535A GB08724/67A GB1872467A GB1153535A GB 1153535 A GB1153535 A GB 1153535A GB 08724/67 A GB08724/67 A GB 08724/67A GB 1872467 A GB1872467 A GB 1872467A GB 1153535 A GB1153535 A GB 1153535A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bath
- indium arsenide
- electrolytically
- electrolytically etching
- etching indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
1,153,535. Electrolytically etching indium arsenide. MATSUSHITA ELECTRONICS CORP. April 24, 1967 [May 9, 1966], No. 18724/67. Heading C7B. An indium arsenide crystal, e.g. mechanically lapped with Al a O 3 or SiC polishing material, is electrolytically etched by introducing it as an anode into a bath comprising by volume one part 98% concentrated nitric acid and 1 to 3 parts ethylene glycol to obtain a smooth mirror surface suitable for semi-conductor devices. The current density is preferably 1 - 5 A/cm<SP>2</SP> and the bath temperature 20 - 40‹ C. A Pt plate cathode is used. Prior art electrolytic etching uses a perchloric and acetic acid bath, and a potassium ferrocyanide and hydroxide bath.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2953166 | 1966-05-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1153535A true GB1153535A (en) | 1969-05-29 |
Family
ID=12278675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08724/67A Expired GB1153535A (en) | 1966-05-09 | 1967-04-24 | Bath and Process for Electrolytically Etching Indium Arsenide |
Country Status (4)
Country | Link |
---|---|
US (1) | US3485731A (en) |
DE (1) | DE1621110B1 (en) |
GB (1) | GB1153535A (en) |
NL (1) | NL141932B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3635805A (en) * | 1968-02-29 | 1972-01-18 | Atomic Energy Commission Israe | Working of metal bodies |
US3673063A (en) * | 1971-03-31 | 1972-06-27 | Avco Corp | Production of lead-tin-telluride material for infrared detectors |
US4169026A (en) * | 1976-07-23 | 1979-09-25 | Matsushita Electric Industrial Co., Ltd. | Etchant for electrolytic etching of a ferrite for a magnetic head and method of producing a magnetic head |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA602880A (en) * | 1960-08-02 | Philco Corporation | Electrolytic etching of semiconductors |
-
1967
- 1967-04-24 GB GB08724/67A patent/GB1153535A/en not_active Expired
- 1967-04-28 DE DE1967M0073781 patent/DE1621110B1/en not_active Withdrawn
- 1967-05-01 US US634914A patent/US3485731A/en not_active Expired - Lifetime
- 1967-05-08 NL NL676706404A patent/NL141932B/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL6706404A (en) | 1967-11-10 |
DE1621110B1 (en) | 1971-06-24 |
NL141932B (en) | 1974-04-16 |
US3485731A (en) | 1969-12-23 |
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