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GB1530509A - Installation for producing electrolytically microscopic passages in a semiconductor body in particular microscopic passages for electronmultiplication applications and operating process of the same - Google Patents

Installation for producing electrolytically microscopic passages in a semiconductor body in particular microscopic passages for electronmultiplication applications and operating process of the same

Info

Publication number
GB1530509A
GB1530509A GB2642276A GB2642276A GB1530509A GB 1530509 A GB1530509 A GB 1530509A GB 2642276 A GB2642276 A GB 2642276A GB 2642276 A GB2642276 A GB 2642276A GB 1530509 A GB1530509 A GB 1530509A
Authority
GB
United Kingdom
Prior art keywords
passages
holes
semi
electrolyte
microscopic passages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2642276A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1530509A publication Critical patent/GB1530509A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1530509 Electro-drilling semi-conductors THOMSON-CSF 24 June 1976 [27 June 1975] 26422/76 Heading C7B Microscopic passages are drilled in a semiconductor 1 preferably having no more than 10<SP>12</SP> free charge carriers/cm<SP>3</SP> (e.g. n-type GaAs) by opposing the material to a cathode 5 in an electro- - lyte 11 while injecting "holes" into the rear face 40 in a desired pattern. The potential across the electrodes must be such that the electrical field generated in the semi-conductor extending from the face in contact with the electrolyte reaches at least to the region where the holes are still diffusing into the semi-conductor. In Fig. 1 a conductive SnO 2 layer 3 provides anodic contact and is covered by a mosaic of windows 2 bounded by Mo 4, with visible radiation (wavy arrows) directed thereon to generate the holes. At the point of "hole" emergence into the electrolyte, passages 15 appear via anodic dissolution. In another arrangement, anodic contact is effected via a mosaic of separate, inter-connected ohmic contacts which act also as hole injectors. A basic K 2 Cro 4 solution is specified as electrolyte.
GB2642276A 1975-06-27 1976-06-24 Installation for producing electrolytically microscopic passages in a semiconductor body in particular microscopic passages for electronmultiplication applications and operating process of the same Expired GB1530509A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7520398A FR2315763A1 (en) 1975-06-27 1975-06-27 MICRO-CHANNELS REALIZATION INSTALLATION IN A SEMICONDUCTOR BODY, IN PARTICULAR ELECTRON MULTIPLIER MICRO-CHANNELS

Publications (1)

Publication Number Publication Date
GB1530509A true GB1530509A (en) 1978-11-01

Family

ID=9157238

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2642276A Expired GB1530509A (en) 1975-06-27 1976-06-24 Installation for producing electrolytically microscopic passages in a semiconductor body in particular microscopic passages for electronmultiplication applications and operating process of the same

Country Status (4)

Country Link
JP (1) JPS524785A (en)
DE (1) DE2628381B2 (en)
FR (1) FR2315763A1 (en)
GB (1) GB1530509A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387247B1 (en) 1999-09-03 2002-05-14 Shell Oil Company Feed injection system for catalytic cracking process
WO2002075800A1 (en) * 2001-03-19 2002-09-26 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for electrochemical etching, and electrochemically-etched product
US7749868B2 (en) 2005-05-18 2010-07-06 Panasonic Electric Works Co., Ltd. Process of forming a curved profile on a semiconductor substrate
US8313632B2 (en) 2005-05-18 2012-11-20 Panasonic Corporation Process of making an optical lens

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488772A (en) * 1977-12-26 1979-07-14 Nec Corp Local etching method for semiconductor device
JPS5513960A (en) * 1978-07-17 1980-01-31 Nec Corp Mesa forming method
JP4743102B2 (en) * 2005-05-18 2011-08-10 パナソニック電工株式会社 Method of forming curved surface
JP4862642B2 (en) * 2005-05-18 2012-01-25 パナソニック電工株式会社 Method of forming curved surface
JP4586797B2 (en) * 2005-08-26 2010-11-24 パナソニック電工株式会社 Manufacturing method of semiconductor lens
JP4586796B2 (en) * 2005-08-26 2010-11-24 パナソニック電工株式会社 Manufacturing method of semiconductor lens
JP4586798B2 (en) * 2005-08-26 2010-11-24 パナソニック電工株式会社 Manufacturing method of semiconductor lens
JP4862407B2 (en) * 2006-01-26 2012-01-25 パナソニック電工株式会社 Manufacturing method of semiconductor lens
JP5010253B2 (en) * 2006-03-28 2012-08-29 パナソニック株式会社 Semiconductor lens, infrared detector using the same, and method for manufacturing semiconductor lens
JP5010252B2 (en) * 2006-11-27 2012-08-29 パナソニック株式会社 Manufacturing method of semiconductor lens
JP5427062B2 (en) * 2010-02-25 2014-02-26 東京エレクトロン株式会社 Substrate etching method, program, and computer storage medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387247B1 (en) 1999-09-03 2002-05-14 Shell Oil Company Feed injection system for catalytic cracking process
WO2002075800A1 (en) * 2001-03-19 2002-09-26 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for electrochemical etching, and electrochemically-etched product
US7749868B2 (en) 2005-05-18 2010-07-06 Panasonic Electric Works Co., Ltd. Process of forming a curved profile on a semiconductor substrate
US8313632B2 (en) 2005-05-18 2012-11-20 Panasonic Corporation Process of making an optical lens

Also Published As

Publication number Publication date
DE2628381A1 (en) 1976-12-30
DE2628381B2 (en) 1978-11-16
FR2315763B1 (en) 1979-02-02
DE2628381C3 (en) 1979-07-12
FR2315763A1 (en) 1977-01-21
JPS524785A (en) 1977-01-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee