GB1110946A - Improvements in or relating to the deposition of epitaxial layers - Google Patents
Improvements in or relating to the deposition of epitaxial layersInfo
- Publication number
- GB1110946A GB1110946A GB4913663A GB4913663A GB1110946A GB 1110946 A GB1110946 A GB 1110946A GB 4913663 A GB4913663 A GB 4913663A GB 4913663 A GB4913663 A GB 4913663A GB 1110946 A GB1110946 A GB 1110946A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- oxidizing agent
- deposition
- relating
- epitaxial layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
In a process for depositing a semi-conductor material e.g. Si or Ge, on a Si substrate either by vacuum evaporation or chemical deposition, an oxidizing agent e.g. oxygen or water vapour is present at such a partial pressure that silicon monoxide and carbon monoxide are formed with little or no silicon carbide. In the evaporation process the substrate is at a temperature of 900 to 1350 DEG C. and the vacuum is 10-5 to 10-8 Torr. In the chemical deposition process the oxidizing agent is introduced during a preliminary stoving of the substrate in hydrogen at 1200 to 1250 DEG C.ALSO:In a process for chemically depositing Si on a Si substrate, an oxidizing agent e.g. oxygen or water vapour is introduced during a preliminary stoving of the substrate in hydrogen at 1200 DEG to 1250 DEG C. at such a partial pressure that silicon monoxide and carbon monoxide are formed with little or no silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4913663A GB1110946A (en) | 1963-12-12 | 1963-12-12 | Improvements in or relating to the deposition of epitaxial layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4913663A GB1110946A (en) | 1963-12-12 | 1963-12-12 | Improvements in or relating to the deposition of epitaxial layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1110946A true GB1110946A (en) | 1968-04-24 |
Family
ID=10451296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4913663A Expired GB1110946A (en) | 1963-12-12 | 1963-12-12 | Improvements in or relating to the deposition of epitaxial layers |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1110946A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2142045A (en) * | 1983-06-15 | 1985-01-09 | British Telecomm | Growth of semiconductors |
| US4664743A (en) * | 1984-08-21 | 1987-05-12 | British Telecommunications Plc | Growth of semi-conductors and apparatus for use therein |
-
1963
- 1963-12-12 GB GB4913663A patent/GB1110946A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2142045A (en) * | 1983-06-15 | 1985-01-09 | British Telecomm | Growth of semiconductors |
| US4664743A (en) * | 1984-08-21 | 1987-05-12 | British Telecommunications Plc | Growth of semi-conductors and apparatus for use therein |
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