GB1079605A - Process for the production of single crystals from metallically conductiing or semiconducting material, for example from silicon or germanium - Google Patents
Process for the production of single crystals from metallically conductiing or semiconducting material, for example from silicon or germaniumInfo
- Publication number
- GB1079605A GB1079605A GB1441366A GB1441366A GB1079605A GB 1079605 A GB1079605 A GB 1079605A GB 1441366 A GB1441366 A GB 1441366A GB 1441366 A GB1441366 A GB 1441366A GB 1079605 A GB1079605 A GB 1079605A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metallically
- conductiing
- germanium
- silicon
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 2
- 229910052732 germanium Inorganic materials 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Single crystal of semi-conducting material e.g. Si or Ge, or metallically conducting material are produced by cathode sputtering on to a support body forming an anode with respect to a cathode and a cathode with respect to another anode. Sputtering may take place in hydrogen or argon e.g. at 10-2 mm Hg. For Si the support body may be heated to 800-1400 DEG C. and for Ge to 600-900 DEG C.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096319 | 1965-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1079605A true GB1079605A (en) | 1967-08-16 |
Family
ID=7519970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1441366A Expired GB1079605A (en) | 1965-04-01 | 1966-03-31 | Process for the production of single crystals from metallically conductiing or semiconducting material, for example from silicon or germanium |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1079605A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127439A (en) * | 1982-09-27 | 1984-04-11 | Konishiroku Photo Ind | Vacuum depositing compound semi conductors in activated hydrogen |
-
1966
- 1966-03-31 GB GB1441366A patent/GB1079605A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127439A (en) * | 1982-09-27 | 1984-04-11 | Konishiroku Photo Ind | Vacuum depositing compound semi conductors in activated hydrogen |
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