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FR3131075B1 - Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance - Google Patents

Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance Download PDF

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Publication number
FR3131075B1
FR3131075B1 FR2113655A FR2113655A FR3131075B1 FR 3131075 B1 FR3131075 B1 FR 3131075B1 FR 2113655 A FR2113655 A FR 2113655A FR 2113655 A FR2113655 A FR 2113655A FR 3131075 B1 FR3131075 B1 FR 3131075B1
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Prior art keywords
layer
silicon
semiconductor structure
insulation
nitride semiconductor
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FR2113655A
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FR3131075A1 (fr
Inventor
Christelle Veytizou
Ionut Radu
Joff Derluyn
Stefan Degroote
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Soitec Belgium
Soitec SA
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Soitec Belgium
Soitec SA
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Priority to FR2113655A priority Critical patent/FR3131075B1/fr
Application filed by Soitec Belgium, Soitec SA filed Critical Soitec Belgium
Priority to KR1020247023870A priority patent/KR20240116563A/ko
Priority to CN202280082217.4A priority patent/CN118679556A/zh
Priority to US18/720,416 priority patent/US20250056858A1/en
Priority to PCT/EP2022/082085 priority patent/WO2023110267A1/fr
Priority to EP22817285.4A priority patent/EP4449482A1/fr
Priority to JP2024527762A priority patent/JP2024545586A/ja
Priority to TW111144574A priority patent/TW202341486A/zh
Publication of FR3131075A1 publication Critical patent/FR3131075A1/fr
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Publication of FR3131075B1 publication Critical patent/FR3131075B1/fr
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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Abstract

L’invention porte sur une structure semi-conductrice (1) comprenant : − un substrat de Silicium sur Isolant (101) comprenant : o une couche de base de silicium (10) ; o une couche intermédiaire (11) sur ladite couche de base (10) et comprenant : une couche riche en pièges (111) ; et un isolant enterré (121) sur la couche riche en pièges (111) ; et o une couche supérieure de silicium dopé de type n (12) sur ladite couche intermédiaire (11) ; et − un empilement (202) de couches semi-conductrices III-N épitaxiales sur ledit substrat (101) de Silicium sur Isolant, comprenant : o une première couche III-N active (21) sur ladite couche supérieure (12) ; o une deuxième couche III-N active (22) sur ladite première couche III-N active (21) ; avec un Gaz d’Electrons bidimensionnel (200) entre ladite première couche III-N active (21) et ladite deuxième couche III-N active (22). Figure à publier avec l’abrégé : Fig. 3
FR2113655A 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance Active FR3131075B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2113655A FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
CN202280082217.4A CN118679556A (zh) 2021-12-16 2022-11-16 绝缘体上硅上的第iii族氮化物半导体结构及其生长方法
US18/720,416 US20250056858A1 (en) 2021-12-16 2022-11-16 Group iii-nitride semiconductor structure on silicon-on-insulator and method of growing thereof
PCT/EP2022/082085 WO2023110267A1 (fr) 2021-12-16 2022-11-16 Structure semi-conductrice au nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
KR1020247023870A KR20240116563A (ko) 2021-12-16 2022-11-16 실리콘-온-절연체 상의 iii족-질화물 반도체 구조물 및 그 성장 방법
EP22817285.4A EP4449482A1 (fr) 2021-12-16 2022-11-16 Structure semi-conductrice au nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
JP2024527762A JP2024545586A (ja) 2021-12-16 2022-11-16 シリコンオンインシュレータ上のｉｉｉ族窒化物半導体構造およびそれを成長させる方法
TW111144574A TW202341486A (zh) 2021-12-16 2022-11-22 絕緣體上矽上的ⅲ族氮化物半導體結構及其生長方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2113655 2021-12-16
FR2113655A FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance

Publications (2)

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FR3131075A1 FR3131075A1 (fr) 2023-06-23
FR3131075B1 true FR3131075B1 (fr) 2023-12-22

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FR2113655A Active FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance

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US (1) US20250056858A1 (fr)
EP (1) EP4449482A1 (fr)
JP (1) JP2024545586A (fr)
KR (1) KR20240116563A (fr)
CN (1) CN118679556A (fr)
FR (1) FR3131075B1 (fr)
TW (1) TW202341486A (fr)
WO (1) WO2023110267A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999288B2 (en) * 2007-11-26 2011-08-16 International Rectifier Corporation High voltage durability III-nitride semiconductor device
JP5117588B2 (ja) * 2010-09-07 2013-01-16 株式会社東芝 窒化物半導体結晶層の製造方法
JP5903818B2 (ja) * 2011-09-26 2016-04-13 富士通株式会社 化合物半導体装置及びその製造方法
US9721969B2 (en) * 2015-06-30 2017-08-01 Globalfoundries Singapore Pte. Ltd. Creation of wide band gap material for integration to SOI thereof
US10644142B2 (en) * 2017-12-22 2020-05-05 Nxp Usa, Inc. Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor

Also Published As

Publication number Publication date
EP4449482A1 (fr) 2024-10-23
WO2023110267A1 (fr) 2023-06-22
JP2024545586A (ja) 2024-12-10
KR20240116563A (ko) 2024-07-29
FR3131075A1 (fr) 2023-06-23
US20250056858A1 (en) 2025-02-13
TW202341486A (zh) 2023-10-16
CN118679556A (zh) 2024-09-20

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