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FR3091019B1 - Mémoire de puce électronique - Google Patents

Mémoire de puce électronique Download PDF

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Publication number
FR3091019B1
FR3091019B1 FR1873833A FR1873833A FR3091019B1 FR 3091019 B1 FR3091019 B1 FR 3091019B1 FR 1873833 A FR1873833 A FR 1873833A FR 1873833 A FR1873833 A FR 1873833A FR 3091019 B1 FR3091019 B1 FR 3091019B1
Authority
FR
France
Prior art keywords
memory
microchip memory
association
microchip
abstract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1873833A
Other languages
English (en)
Other versions
FR3091019A1 (fr
Inventor
Stéphane Denorme
Philippe Candelier
Joël Damiens
Fabrice Marinet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
STMicroelectronics France SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Rousset SAS filed Critical STMicroelectronics SA
Priority to FR1873833A priority Critical patent/FR3091019B1/fr
Priority to US16/709,019 priority patent/US11250930B2/en
Priority to CN201911337268.3A priority patent/CN111354410A/zh
Priority to CN201922328536.7U priority patent/CN211062472U/zh
Publication of FR3091019A1 publication Critical patent/FR3091019A1/fr
Application granted granted Critical
Publication of FR3091019B1 publication Critical patent/FR3091019B1/fr
Priority to US17/647,793 priority patent/US11621051B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Storage Device Security (AREA)

Abstract

Mémoire de puce électronique La présente description concerne un dispositif (900) comprenant une association en série d'un premier interrupteur (120) et d'une association en parallèle de premier (902) et deuxième (904) points mémoire à programmation irréversible. Figure pour l'abrégé : Fig. 9
FR1873833A 2018-12-21 2018-12-21 Mémoire de puce électronique Active FR3091019B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1873833A FR3091019B1 (fr) 2018-12-21 2018-12-21 Mémoire de puce électronique
US16/709,019 US11250930B2 (en) 2018-12-21 2019-12-10 Electronic chip memory
CN201911337268.3A CN111354410A (zh) 2018-12-21 2019-12-23 电子芯片存储器
CN201922328536.7U CN211062472U (zh) 2018-12-21 2019-12-23 器件和存储器
US17/647,793 US11621051B2 (en) 2018-12-21 2022-01-12 Electronic chip memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873833A FR3091019B1 (fr) 2018-12-21 2018-12-21 Mémoire de puce électronique

Publications (2)

Publication Number Publication Date
FR3091019A1 FR3091019A1 (fr) 2020-06-26
FR3091019B1 true FR3091019B1 (fr) 2021-05-07

Family

ID=66867294

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1873833A Active FR3091019B1 (fr) 2018-12-21 2018-12-21 Mémoire de puce électronique

Country Status (3)

Country Link
US (2) US11250930B2 (fr)
CN (2) CN111354410A (fr)
FR (1) FR3091019B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3091019B1 (fr) * 2018-12-21 2021-05-07 St Microelectronics Sa Mémoire de puce électronique
US11528126B2 (en) 2021-02-16 2022-12-13 Google Llc Interface for revision-limited memory
FR3127328B1 (fr) * 2021-09-17 2023-10-06 St Microelectronics Rousset Circuit intégré comportant des cellules pré-caractérisées et au moins une structure capacitive de remplissage.
EP4303921A1 (fr) * 2022-05-25 2024-01-10 Changxin Memory Technologies, Inc. Structure anti-fusible, réseau anti-fusible et mémoire

Family Cites Families (28)

* Cited by examiner, † Cited by third party
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US5301159A (en) * 1993-02-05 1994-04-05 Micron Technology, Inc. Anti-fuse circuit and method wherein the read operation and programming operation are reversed
US5691664A (en) * 1996-01-16 1997-11-25 Motorola, Inc. Programmable analog array and method for establishing a feedback loop therein
KR100356774B1 (ko) * 2000-11-22 2002-10-18 삼성전자 주식회사 반도체 메모리 장치의 결함 어드레스 저장 회로
DE10110469A1 (de) * 2001-03-05 2002-09-26 Infineon Technologies Ag Integrierter Speicher und Verfahren zum Testen und Reparieren desselben
US6798693B2 (en) * 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US6775171B2 (en) * 2002-11-27 2004-08-10 Novocell Semiconductor, Inc. Method of utilizing voltage gradients to guide dielectric breakdowns for non-volatile memory elements and related embedded memories
US6897543B1 (en) 2003-08-22 2005-05-24 Altera Corporation Electrically-programmable integrated circuit antifuses
US8767433B2 (en) * 2004-05-06 2014-07-01 Sidense Corp. Methods for testing unprogrammed OTP memory
KR101320519B1 (ko) * 2006-07-27 2013-10-23 삼성전자주식회사 패스 트랜지스터를 갖는 비휘발성 메모리 소자 및 그 동작방법
TW200907963A (en) * 2007-08-02 2009-02-16 Ind Tech Res Inst Magnetic random access memory and operation method
US8050076B2 (en) 2009-08-07 2011-11-01 Broadcom Corporation One-time programmable memory cell with shiftable threshold voltage transistor
US8283731B2 (en) 2010-06-02 2012-10-09 Kilopass Technologies, Inc. One-time programmable memory
JP5686698B2 (ja) * 2011-08-05 2015-03-18 ルネサスエレクトロニクス株式会社 半導体装置
KR20130135626A (ko) 2012-06-01 2013-12-11 삼성전자주식회사 프로그램가능한 안티퓨즈 셀 어레이를 포함하는 메모리 장치
US9761595B2 (en) 2013-02-21 2017-09-12 Infineon Technologies Ag One-time programming device and a semiconductor device
JP2015026998A (ja) * 2013-07-26 2015-02-05 株式会社東芝 マルチコンテキストコンフィグレーションメモリ
US9502133B2 (en) 2013-10-11 2016-11-22 Sharp Kabushiki Kaisha Semiconductor device
KR20160001152A (ko) 2014-06-26 2016-01-06 삼성전자주식회사 비휘발성 메모리 소자
US9876123B2 (en) 2014-07-16 2018-01-23 Qualcomm Incorporated Non-volatile one-time programmable memory device
KR102274259B1 (ko) 2014-11-26 2021-07-07 삼성전자주식회사 멀티 비트 프로그램을 위한 오티피 메모리 셀 및 오티피 메모리 장치
CN105931659A (zh) * 2015-02-26 2016-09-07 杭州海存信息技术有限公司 紧凑型三维存储器
US10290352B2 (en) 2015-02-27 2019-05-14 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions
US9659944B2 (en) 2015-06-30 2017-05-23 Avago Technologies General Ip (Singapore) Pte. Ltd. One time programmable memory with a twin gate structure
CN108701486B (zh) * 2016-01-08 2022-03-11 美商新思科技有限公司 使用反熔丝存储器阵列的puf值生成
US10170625B2 (en) 2017-01-20 2019-01-01 Globalfoundries Singapore Pte. Ltd. Method for manufacturing a compact OTP/MTP technology
FR3084771A1 (fr) 2018-07-31 2020-02-07 Stmicroelectronics (Rousset) Sas Element anti-fusible compact et procede de fabrication
FR3091019B1 (fr) * 2018-12-21 2021-05-07 St Microelectronics Sa Mémoire de puce électronique
CN116597882A (zh) * 2022-02-07 2023-08-15 华邦电子股份有限公司 存储器件以及使用其的编程方法

Also Published As

Publication number Publication date
US11250930B2 (en) 2022-02-15
US11621051B2 (en) 2023-04-04
US20220139491A1 (en) 2022-05-05
CN111354410A (zh) 2020-06-30
US20200202972A1 (en) 2020-06-25
CN211062472U (zh) 2020-07-21
FR3091019A1 (fr) 2020-06-26

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