[go: up one dir, main page]

FR3031238B1 - Dispositif optoelectronique a diodes electroluminescentes - Google Patents

Dispositif optoelectronique a diodes electroluminescentes

Info

Publication number
FR3031238B1
FR3031238B1 FR1463420A FR1463420A FR3031238B1 FR 3031238 B1 FR3031238 B1 FR 3031238B1 FR 1463420 A FR1463420 A FR 1463420A FR 1463420 A FR1463420 A FR 1463420A FR 3031238 B1 FR3031238 B1 FR 3031238B1
Authority
FR
France
Prior art keywords
light emitting
emitting diodes
optoelectronic device
optoelectronic
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1463420A
Other languages
English (en)
Other versions
FR3031238A1 (fr
Inventor
Xavier Hugon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1463420A priority Critical patent/FR3031238B1/fr
Application filed by Aledia filed Critical Aledia
Priority to PCT/FR2015/053754 priority patent/WO2016108021A1/fr
Priority to CN201580071371.1A priority patent/CN107112344B/zh
Priority to BR112017012829-2A priority patent/BR112017012829B1/pt
Priority to US15/539,373 priority patent/US10084012B2/en
Priority to JP2017535333A priority patent/JP6701205B2/ja
Priority to EP15823720.6A priority patent/EP3241245A1/fr
Priority to KR1020177017962A priority patent/KR102483493B1/ko
Publication of FR3031238A1 publication Critical patent/FR3031238A1/fr
Application granted granted Critical
Publication of FR3031238B1 publication Critical patent/FR3031238B1/fr
Priority to US16/112,490 priority patent/US10535709B2/en
Priority to US16/706,327 priority patent/US10923530B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
FR1463420A 2014-12-30 2014-12-30 Dispositif optoelectronique a diodes electroluminescentes Active FR3031238B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1463420A FR3031238B1 (fr) 2014-12-30 2014-12-30 Dispositif optoelectronique a diodes electroluminescentes
KR1020177017962A KR102483493B1 (ko) 2014-12-30 2015-12-24 발광 다이오드를 구비한 광전자 장치
BR112017012829-2A BR112017012829B1 (pt) 2014-12-30 2015-12-24 Dispositivo optoeletrônico e processo de manufatura de um dispositivo optoeletrônico
US15/539,373 US10084012B2 (en) 2014-12-30 2015-12-24 Optoelectronic device with light-emitting diodes
JP2017535333A JP6701205B2 (ja) 2014-12-30 2015-12-24 発光ダイオードを含む光電デバイス
EP15823720.6A EP3241245A1 (fr) 2014-12-30 2015-12-24 Dispositif optoélectronique a diodes électroluminescentes
PCT/FR2015/053754 WO2016108021A1 (fr) 2014-12-30 2015-12-24 Dispositif optoélectronique a diodes électroluminescentes
CN201580071371.1A CN107112344B (zh) 2014-12-30 2015-12-24 具有发光二极管的光电子设备
US16/112,490 US10535709B2 (en) 2014-12-30 2018-08-24 Optoelectronic device with light-emitting diodes
US16/706,327 US10923530B2 (en) 2014-12-30 2019-12-06 Optoelectronic device with light-emitting diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1463420A FR3031238B1 (fr) 2014-12-30 2014-12-30 Dispositif optoelectronique a diodes electroluminescentes

Publications (2)

Publication Number Publication Date
FR3031238A1 FR3031238A1 (fr) 2016-07-01
FR3031238B1 true FR3031238B1 (fr) 2016-12-30

Family

ID=53008623

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1463420A Active FR3031238B1 (fr) 2014-12-30 2014-12-30 Dispositif optoelectronique a diodes electroluminescentes

Country Status (8)

Country Link
US (1) US10084012B2 (fr)
EP (1) EP3241245A1 (fr)
JP (1) JP6701205B2 (fr)
KR (1) KR102483493B1 (fr)
CN (1) CN107112344B (fr)
BR (1) BR112017012829B1 (fr)
FR (1) FR3031238B1 (fr)
WO (1) WO2016108021A1 (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535709B2 (en) 2014-12-30 2020-01-14 Aledia Optoelectronic device with light-emitting diodes
EP3127747A1 (fr) * 2015-08-07 2017-02-08 Valeo Vision Dispositif d'éclairage et/ou de signalisation pour véhicule automobile
US10170455B2 (en) * 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
FR3053530B1 (fr) 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores
FR3053757B1 (fr) 2016-07-05 2020-07-17 Valeo Vision Dispositif d'eclairage et/ou de signalisation pour vehicule automobile
KR102592276B1 (ko) 2016-07-15 2023-10-24 삼성디스플레이 주식회사 발광장치 및 그의 제조방법
FR3055948B1 (fr) 2016-09-15 2018-09-07 Valeo Vision Procede de montage d'un composant electroluminescent matriciel sur un support
FR3060201B1 (fr) * 2016-12-12 2019-05-17 Aledia Dispositif electronique comprenant une tranchee d'isolation electrique et son procede de fabrication
FR3061358B1 (fr) * 2016-12-27 2021-06-11 Aledia Procede de fabrication d’un dispositif optoelectronique comportant des plots photoluminescents de photoresine
FR3061357B1 (fr) * 2016-12-27 2019-05-24 Aledia Procede de realisation d’un dispositif optoelectronique comportant une etape de gravure de la face arriere du substrat de croissance
FR3061608B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoelectronique a diodes electroluminescentes
DE102017113745A1 (de) * 2017-06-21 2018-12-27 Osram Opto Semiconductors Gmbh Halbleiterdisplay, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung solcher
KR102459144B1 (ko) * 2017-11-20 2022-10-27 서울반도체 주식회사 전구형 광원
US10818816B2 (en) * 2017-11-22 2020-10-27 Advanced Semiconductor Engineering, Inc. Optical device with decreased interference
DE102017129326B4 (de) * 2017-12-08 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Halbleiterlichtquellen
FR3077653A1 (fr) * 2018-02-06 2019-08-09 Aledia Dispositif optoelectronique avec des composants electroniques au niveau de la face arriere du substrat et procede de fabrication
KR102502223B1 (ko) * 2018-04-10 2023-02-21 삼성전자주식회사 발광 다이오드 및 그의 제조 방법
FR3082663B1 (fr) * 2018-06-14 2022-01-07 Aledia Dispositif optoelectronique
FR3082657B1 (fr) 2018-06-19 2021-01-29 Aledia Procede de fabrication d’un dispositif optoelectronique a parois de confinement lumineux auto alignes
FR3083045B1 (fr) * 2018-06-26 2020-07-31 Aledia Dispositif optoelectronique a diodes electroluminescentes
FR3083371B1 (fr) 2018-06-28 2022-01-14 Aledia Dispositifs émetteurs, écran d'affichage associé et procédés de fabrication d'un dispositif émetteur
FR3083370B1 (fr) * 2018-06-28 2021-10-15 Aledia Dispositif émetteur, écran d'affichage associé et procédé de fabrication d'un dispositif émetteur
FR3087581B1 (fr) * 2018-10-22 2021-01-15 Aledia Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique
FR3087580B1 (fr) * 2018-10-23 2020-12-18 Aledia Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions
FR3087936B1 (fr) * 2018-10-24 2022-07-15 Aledia Dispositif electronique
FR3091027B1 (fr) * 2018-12-21 2022-11-18 Aledia Dispositif optoélectronique
JP2020166191A (ja) 2019-03-29 2020-10-08 株式会社ジャパンディスプレイ 表示装置
CN109935614B (zh) * 2019-04-09 2021-10-26 南京大学 基于深硅刻蚀模板量子点转移工艺的微米全色qled阵列器件及其制备方法
CN111816729B (zh) * 2019-04-11 2021-08-31 中国科学院半导体研究所 LED/ZnO纳米线阵列集成的光电晶体管芯片及制备方法
KR20210003991A (ko) 2019-07-02 2021-01-13 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
FR3098987B1 (fr) 2019-07-15 2021-07-16 Aledia Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication
CN112242412B (zh) * 2019-07-17 2024-03-12 錼创显示科技股份有限公司 半导体结构与微型半导体显示设备
FR3111236A1 (fr) * 2020-06-03 2021-12-10 Aledia Dispositif électronique pour capture ou émission d’une grandeur physique et procédé de fabrication
KR102561848B1 (ko) * 2021-06-07 2023-08-01 넥센타이어 주식회사 밀착형 벨트가 적용된 그린타이어
FR3147421A1 (fr) * 2023-03-30 2024-10-04 Aledia Ecran d’affichage à transitions réduites entre sous-pixels

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1359413A (fr) 1963-04-04 1964-04-24 Shell Int Research Procédé de préparation de composés organiques oxygénés
GB1060051A (en) 1965-01-11 1967-02-22 Rolls Royce Improvements in or relating to gas turbine engines
US20070080360A1 (en) * 2005-10-06 2007-04-12 Url Mirsky Microelectronic interconnect substrate and packaging techniques
US8624968B1 (en) * 2007-04-25 2014-01-07 Stc.Unm Lens-less digital microscope
TW200937574A (en) * 2007-09-28 2009-09-01 Toshiba Kk Semiconductor device and method for manufacturing same
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR100982986B1 (ko) * 2008-04-17 2010-09-17 삼성엘이디 주식회사 서브마운트, 발광다이오드 패키지 및 그 제조방법
CN102089893B (zh) * 2008-07-07 2013-02-06 格罗有限公司 纳米结构led
WO2010022064A1 (fr) * 2008-08-21 2010-02-25 Nanocrystal Corporation Nanostructures de nitrure du groupe iii sans défaut et dispositifs utilisant des techniques de croissance pulsée et non pulsée
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
JP4930548B2 (ja) * 2009-06-08 2012-05-16 サンケン電気株式会社 発光装置及びその製造方法
KR20110008550A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 발광 소자 및 그 제조 방법
KR101192181B1 (ko) * 2010-03-31 2012-10-17 (주)포인트엔지니어링 광 소자 디바이스 및 그 제조 방법
SG186261A1 (en) * 2010-06-18 2013-01-30 Glo Ab Nanowire led structure and method for manufacturing the same
DE102010034665B4 (de) * 2010-08-18 2024-10-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
FR2995729B1 (fr) * 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
FR3003403B1 (fr) * 2013-03-14 2016-11-04 Commissariat Energie Atomique Procede de formation de diodes electroluminescentes
FR3005785B1 (fr) * 2013-05-14 2016-11-25 Aledia Dispositif optoelectronique et son procede de fabrication

Also Published As

Publication number Publication date
JP2018503258A (ja) 2018-02-01
WO2016108021A1 (fr) 2016-07-07
CN107112344B (zh) 2021-02-09
CN107112344A (zh) 2017-08-29
EP3241245A1 (fr) 2017-11-08
US20170373118A1 (en) 2017-12-28
JP6701205B2 (ja) 2020-05-27
BR112017012829B1 (pt) 2022-12-06
US10084012B2 (en) 2018-09-25
KR102483493B1 (ko) 2022-12-30
KR20170101923A (ko) 2017-09-06
BR112017012829A2 (pt) 2018-01-02
FR3031238A1 (fr) 2016-07-01

Similar Documents

Publication Publication Date Title
FR3031238B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
FR3028672B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
FR3011381B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
FR3011388B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
EP3454372A4 (fr) Diode électroluminescente
EP3550937A4 (fr) Dispositif d'affichage utilisant une diode électroluminescente à semi-conducteurs
EP3238258A4 (fr) Dispositif d'affichage flexible à diodes électroluminescentes organiques
GB201813543D0 (en) Magnetometer with a light emitting diode
FR3023066B1 (fr) Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande
EP2986082A4 (fr) Dispositif électroluminescent
EP2851969A4 (fr) Dispositif semi-conducteur émetteur de lumière
PL3507541T3 (pl) Urządzenie emitujące światło
GB2575195B (en) Organic light emitting diode display device
FR3053531B1 (fr) Dispositif optoelectronique a diodes tridimensionnelles
FR3015772B1 (fr) Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree
EP2996164A4 (fr) Dispositif électroluminescent
EP3428697A4 (fr) Dispositif électroluminescent
IL248343A0 (en) Illuminating device with digital micro mirrors with a light emitting diode
KR102346674B9 (ko) 유기 발광 소자
IL254911A0 (en) Light-emitting diode type lighting device
EP2950343A4 (fr) Dispositif électroluminescent
EP3451394A4 (fr) Dispositif électroluminescent
FR3009474B1 (fr) Dispositif a diodes electroluminescentes
KR102285389B9 (ko) 유기 발광 소자
GB201622104D0 (en) Organic light emitting diode display device

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20160701

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11