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FR3003684B1 - Procede de dissolution d'une couche de dioxyde de silicium. - Google Patents

Procede de dissolution d'une couche de dioxyde de silicium.

Info

Publication number
FR3003684B1
FR3003684B1 FR1300706A FR1300706A FR3003684B1 FR 3003684 B1 FR3003684 B1 FR 3003684B1 FR 1300706 A FR1300706 A FR 1300706A FR 1300706 A FR1300706 A FR 1300706A FR 3003684 B1 FR3003684 B1 FR 3003684B1
Authority
FR
France
Prior art keywords
dissolving
silicon dioxide
dioxide layer
layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1300706A
Other languages
English (en)
Other versions
FR3003684A1 (fr
Inventor
Didier Landru
Oleg Kononchuk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1300706A priority Critical patent/FR3003684B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to SG11201507920XA priority patent/SG11201507920XA/en
Priority to CN201480017598.3A priority patent/CN105051881B/zh
Priority to JP2016504764A priority patent/JP6442478B2/ja
Priority to DE112014001629.2T priority patent/DE112014001629B4/de
Priority to PCT/IB2014/000250 priority patent/WO2014155166A1/fr
Priority to US14/779,477 priority patent/US9514960B2/en
Priority to KR1020157029834A priority patent/KR102308646B1/ko
Publication of FR3003684A1 publication Critical patent/FR3003684A1/fr
Application granted granted Critical
Publication of FR3003684B1 publication Critical patent/FR3003684B1/fr
Priority to US15/350,290 priority patent/US9911624B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Silicon Compounds (AREA)
FR1300706A 2013-03-25 2013-03-25 Procede de dissolution d'une couche de dioxyde de silicium. Active FR3003684B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1300706A FR3003684B1 (fr) 2013-03-25 2013-03-25 Procede de dissolution d'une couche de dioxyde de silicium.
CN201480017598.3A CN105051881B (zh) 2013-03-25 2014-03-03 用于分解二氧化硅层的方法
JP2016504764A JP6442478B2 (ja) 2013-03-25 2014-03-03 二酸化ケイ素層を分解する方法
DE112014001629.2T DE112014001629B4 (de) 2013-03-25 2014-03-03 Verfahren zum Auflösen einer Siliciumdioxidschicht
SG11201507920XA SG11201507920XA (en) 2013-03-25 2014-03-03 Method for dissolving a silicon dioxide layer
PCT/IB2014/000250 WO2014155166A1 (fr) 2013-03-25 2014-03-03 Procede de dissolution d'une couche de dioxyde de silicium
US14/779,477 US9514960B2 (en) 2013-03-25 2014-03-03 Method for dissolving a silicon dioxide layer
KR1020157029834A KR102308646B1 (ko) 2013-03-25 2014-03-03 실리콘 이산화물 층 용해 방법
US15/350,290 US9911624B2 (en) 2013-03-25 2016-11-14 Method for dissolving a silicon dioxide layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1300706A FR3003684B1 (fr) 2013-03-25 2013-03-25 Procede de dissolution d'une couche de dioxyde de silicium.

Publications (2)

Publication Number Publication Date
FR3003684A1 FR3003684A1 (fr) 2014-09-26
FR3003684B1 true FR3003684B1 (fr) 2015-03-27

Family

ID=48741255

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1300706A Active FR3003684B1 (fr) 2013-03-25 2013-03-25 Procede de dissolution d'une couche de dioxyde de silicium.

Country Status (8)

Country Link
US (2) US9514960B2 (fr)
JP (1) JP6442478B2 (fr)
KR (1) KR102308646B1 (fr)
CN (1) CN105051881B (fr)
DE (1) DE112014001629B4 (fr)
FR (1) FR3003684B1 (fr)
SG (1) SG11201507920XA (fr)
WO (1) WO2014155166A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3057705B1 (fr) * 2016-10-13 2019-04-12 Soitec Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087242A (en) * 1998-02-26 2000-07-11 International Business Machines Corporation Method to improve commercial bonded SOI material
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP2000277526A (ja) * 1999-03-24 2000-10-06 Canon Inc 半導体製造装置及びそれを用いた半導体部材の製造方法
KR100574150B1 (ko) * 2002-02-28 2006-04-25 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조방법
JP4407127B2 (ja) * 2003-01-10 2010-02-03 信越半導体株式会社 Ｓｏｉウエーハの製造方法
TWI248681B (en) * 2004-03-29 2006-02-01 Imec Inter Uni Micro Electr Method for fabricating self-aligned source and drain contacts in a double gate FET with controlled manufacturing of a thin Si or non-Si channel
JP4631347B2 (ja) * 2004-08-06 2011-02-16 株式会社Ｓｕｍｃｏ 部分ｓｏｉ基板およびその製造方法
WO2008050176A1 (fr) * 2006-10-27 2008-05-02 S.O.I.Tec Silicon On Insulator Technologies Procédé optimisé de transfert d'une couche mince formée dans un substrat avec groupes de trous
ATE486366T1 (de) * 2006-12-26 2010-11-15 Soitec Silicon On Insulator Verfahren zum herstellen einer halbleiter-auf- isolator-struktur
EP2109883A1 (fr) * 2007-02-08 2009-10-21 S.O.I.T.E.C. Silicon on Insulator Technologies Procede de fabrication de substrats dissipant la chaleur de maniere importante
WO2008136225A1 (fr) * 2007-04-27 2008-11-13 Semiconductor Energy Laboratory Co., Ltd. Substrat soi et procédé de fabrication de celui-ci, et dispositif semi-conducteur
JP5183969B2 (ja) * 2007-05-29 2013-04-17 信越半導体株式会社 Ｓｏｉウェーハのシリコン酸化膜形成方法
JP2011504655A (ja) * 2007-11-23 2011-02-10 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ 精密な酸化物の溶解
FR2936356B1 (fr) * 2008-09-23 2010-10-22 Soitec Silicon On Insulator Procede de dissolution locale de la couche d'oxyde dans une structure de type semi-conducteur sur isolant
JP5493345B2 (ja) * 2008-12-11 2014-05-14 信越半導体株式会社 Ｓｏｉウェーハの製造方法
FR2941324B1 (fr) * 2009-01-22 2011-04-29 Soitec Silicon On Insulator Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant.
FR2964495A1 (fr) * 2010-09-02 2012-03-09 Soitec Silicon On Insulator Procede de fabrication d'une structure seoi multiple comportant une couche isolante ultrafine
FR2972564B1 (fr) * 2011-03-08 2016-11-04 S O I Tec Silicon On Insulator Tech Procédé de traitement d'une structure de type semi-conducteur sur isolant

Also Published As

Publication number Publication date
FR3003684A1 (fr) 2014-09-26
US9911624B2 (en) 2018-03-06
WO2014155166A1 (fr) 2014-10-02
KR102308646B1 (ko) 2021-10-05
JP6442478B2 (ja) 2018-12-19
DE112014001629T5 (de) 2015-12-24
JP2016519432A (ja) 2016-06-30
US9514960B2 (en) 2016-12-06
US20170062236A1 (en) 2017-03-02
US20160056052A1 (en) 2016-02-25
KR20150135368A (ko) 2015-12-02
DE112014001629B4 (de) 2021-08-05
SG11201507920XA (en) 2015-10-29
CN105051881A (zh) 2015-11-11
CN105051881B (zh) 2017-10-17

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