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FR2992465B1 - Procede de fabrication collective de leds et structure pour la fabrication collective de leds - Google Patents

Procede de fabrication collective de leds et structure pour la fabrication collective de leds

Info

Publication number
FR2992465B1
FR2992465B1 FR1255931A FR1255931A FR2992465B1 FR 2992465 B1 FR2992465 B1 FR 2992465B1 FR 1255931 A FR1255931 A FR 1255931A FR 1255931 A FR1255931 A FR 1255931A FR 2992465 B1 FR2992465 B1 FR 2992465B1
Authority
FR
France
Prior art keywords
leds
collective
manufacture
production
collective production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1255931A
Other languages
English (en)
Other versions
FR2992465A1 (fr
Inventor
Pascal Guenard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority claimed from FR1255934A external-priority patent/FR2992466A1/fr
Priority to FR1255934A priority Critical patent/FR2992466A1/fr
Priority to FR1255931A priority patent/FR2992465B1/fr
Priority to FR1257617A priority patent/FR2992473B1/fr
Priority to CN201380032574.0A priority patent/CN104396030B/zh
Priority to PCT/EP2013/062423 priority patent/WO2013189857A1/fr
Priority to EP13728426.1A priority patent/EP2865019B1/fr
Priority to KR1020147036038A priority patent/KR102087754B1/ko
Priority to JP2015517701A priority patent/JP6269664B2/ja
Priority to US14/405,632 priority patent/US9478707B2/en
Priority to EP13729948.3A priority patent/EP2865021B1/fr
Priority to KR1020147036042A priority patent/KR102011351B1/ko
Priority to PCT/EP2013/062658 priority patent/WO2013189949A1/fr
Priority to US14/409,650 priority patent/US20150155331A1/en
Priority to JP2015517733A priority patent/JP6103276B2/ja
Priority to CN201380032606.7A priority patent/CN104396033B/zh
Priority to TW102122240A priority patent/TWI518954B/zh
Priority to TW102122243A priority patent/TWI493761B/zh
Publication of FR2992465A1 publication Critical patent/FR2992465A1/fr
Publication of FR2992465B1 publication Critical patent/FR2992465B1/fr
Application granted granted Critical
Priority to US15/332,412 priority patent/US9865786B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
FR1255931A 2012-06-22 2012-06-22 Procede de fabrication collective de leds et structure pour la fabrication collective de leds Active FR2992465B1 (fr)

Priority Applications (18)

Application Number Priority Date Filing Date Title
FR1255934A FR2992466A1 (fr) 2012-06-22 2012-06-22 Procede de realisation de contact pour led et structure resultante
FR1255931A FR2992465B1 (fr) 2012-06-22 2012-06-22 Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR1257617A FR2992473B1 (fr) 2012-06-22 2012-08-06 Procede de fabrication de structures de led ou de cellules solaires
CN201380032574.0A CN104396030B (zh) 2012-06-22 2013-06-14 制造led或太阳能电池的结构的方法
PCT/EP2013/062423 WO2013189857A1 (fr) 2012-06-22 2013-06-14 Procédé de fabrication de structures de del de cellules solaires
EP13728426.1A EP2865019B1 (fr) 2012-06-22 2013-06-14 Procédé de fabrication de structures de del ou de cellules solaires
KR1020147036038A KR102087754B1 (ko) 2012-06-22 2013-06-14 Led들 또는 태양 전지들의 구조들을 제조하는 방법
JP2015517701A JP6269664B2 (ja) 2012-06-22 2013-06-14 Ｌｅｄ又は太陽電池セルの構造を製造する方法
US14/405,632 US9478707B2 (en) 2012-06-22 2013-06-14 Method of manufacturing structures of LEDs or solar cells
KR1020147036042A KR102011351B1 (ko) 2012-06-22 2013-06-18 Led들의 일괄 제조를 위한 방법 및 led들의 일괄 제조를 위한 구조
EP13729948.3A EP2865021B1 (fr) 2012-06-22 2013-06-18 Procédé et structure de fabrication collective de del
PCT/EP2013/062658 WO2013189949A1 (fr) 2012-06-22 2013-06-18 Procédé et structure de fabrication collective de del
US14/409,650 US20150155331A1 (en) 2012-06-22 2013-06-18 Method of collective manufacture of leds and structure for collective manufacture of leds
JP2015517733A JP6103276B2 (ja) 2012-06-22 2013-06-18 Ｌｅｄの集合的製造の方法及びｌｅｄの集合的製造のための構造
CN201380032606.7A CN104396033B (zh) 2012-06-22 2013-06-18 Led的集体制造的方法及led的集体制造的结构
TW102122243A TWI493761B (zh) 2012-06-22 2013-06-21 製造ＬＥＤｓ或太陽能電池結構之方法
TW102122240A TWI518954B (zh) 2012-06-22 2013-06-21 ＬＥＤｓ集體製造之方法及用於ＬＥＤｓ集體製造之結構
US15/332,412 US9865786B2 (en) 2012-06-22 2016-10-24 Method of manufacturing structures of LEDs or solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1255934A FR2992466A1 (fr) 2012-06-22 2012-06-22 Procede de realisation de contact pour led et structure resultante
FR1255931A FR2992465B1 (fr) 2012-06-22 2012-06-22 Procede de fabrication collective de leds et structure pour la fabrication collective de leds

Publications (2)

Publication Number Publication Date
FR2992465A1 FR2992465A1 (fr) 2013-12-27
FR2992465B1 true FR2992465B1 (fr) 2015-03-20

Family

ID=48656041

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1255931A Active FR2992465B1 (fr) 2012-06-22 2012-06-22 Procede de fabrication collective de leds et structure pour la fabrication collective de leds

Country Status (8)

Country Link
US (1) US20150155331A1 (fr)
EP (1) EP2865021B1 (fr)
JP (1) JP6103276B2 (fr)
KR (1) KR102011351B1 (fr)
CN (1) CN104396033B (fr)
FR (1) FR2992465B1 (fr)
TW (1) TWI518954B (fr)
WO (1) WO2013189949A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11876073B2 (en) 2018-11-08 2024-01-16 Soitec Process for collectively fabricating a plurality of semiconductor structures
US11901483B2 (en) 2019-01-09 2024-02-13 Soitec Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN

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DE112017005899T5 (de) * 2016-11-22 2019-08-01 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung mindestens eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement
FR3061357B1 (fr) * 2016-12-27 2019-05-24 Aledia Procede de realisation d’un dispositif optoelectronique comportant une etape de gravure de la face arriere du substrat de croissance
FR3079071B1 (fr) 2018-03-13 2020-02-28 Soitec Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille
EP3596756B1 (fr) 2017-03-17 2023-02-15 Soitec Procédé de fabrication d'une pluralité d'îlots semi-conducteurs cristallins présentant une variété de paramètres de maille
FR3079070B1 (fr) 2018-03-13 2020-02-28 Soitec Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins presentant une variete de parametres de maille
FR3064108B1 (fr) 2017-03-17 2022-12-30 Soitec Silicon On Insulator Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR3066317B1 (fr) 2017-05-09 2020-02-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif d'affichage emissif a led
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FR3076170B1 (fr) * 2017-12-22 2020-05-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de report de structures electroluminescentes
US10615305B1 (en) 2018-04-20 2020-04-07 Facebook Technologies, Llc Self-alignment of micro light emitting diode using planarization
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FR3087580B1 (fr) * 2018-10-23 2020-12-18 Aledia Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions
FR3093862B1 (fr) * 2019-03-11 2022-07-29 Soitec Silicon On Insulator Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN
KR102712725B1 (ko) * 2019-07-10 2024-10-02 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
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FR3127072B1 (fr) * 2021-09-14 2023-08-04 Commissariat Energie Atomique Procédé de fabrication d’une diode semiconductrice par gravures sèche et humide
US20230155065A1 (en) * 2021-11-12 2023-05-18 Lumileds Llc Composite cathode contact for monolithically integrated micro-leds, mini-leds and led arrays
US20230154969A1 (en) * 2021-11-12 2023-05-18 Lumileds Llc Composite cathode contact with spacer layer for monolithically integrated micro-leds, mini-leds, and led arrays
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US11876073B2 (en) 2018-11-08 2024-01-16 Soitec Process for collectively fabricating a plurality of semiconductor structures
US11901483B2 (en) 2019-01-09 2024-02-13 Soitec Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN

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TWI518954B (zh) 2016-01-21
US20150155331A1 (en) 2015-06-04
TW201405891A (zh) 2014-02-01
JP2015524173A (ja) 2015-08-20
KR20150032946A (ko) 2015-03-31
KR102011351B1 (ko) 2019-10-21
CN104396033B (zh) 2017-07-18
EP2865021B1 (fr) 2017-02-01
CN104396033A (zh) 2015-03-04
JP6103276B2 (ja) 2017-03-29
FR2992465A1 (fr) 2013-12-27
WO2013189949A1 (fr) 2013-12-27
EP2865021A1 (fr) 2015-04-29

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