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FR2957717B1 - Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle - Google Patents

Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle

Info

Publication number
FR2957717B1
FR2957717B1 FR1052034A FR1052034A FR2957717B1 FR 2957717 B1 FR2957717 B1 FR 2957717B1 FR 1052034 A FR1052034 A FR 1052034A FR 1052034 A FR1052034 A FR 1052034A FR 2957717 B1 FR2957717 B1 FR 2957717B1
Authority
FR
France
Prior art keywords
metal
insulation
forming
type structure
dimensional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1052034A
Other languages
English (en)
Other versions
FR2957717A1 (fr
Inventor
Simon Jeannot
Pascal Tannhof
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
International Business Machines Corp
Original Assignee
STMicroelectronics SA
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, International Business Machines Corp filed Critical STMicroelectronics SA
Priority to FR1052034A priority Critical patent/FR2957717B1/fr
Priority to US13/052,262 priority patent/US8609530B2/en
Publication of FR2957717A1 publication Critical patent/FR2957717A1/fr
Application granted granted Critical
Publication of FR2957717B1 publication Critical patent/FR2957717B1/fr
Priority to US14/079,393 priority patent/US9391015B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR1052034A 2010-03-22 2010-03-22 Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle Expired - Fee Related FR2957717B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1052034A FR2957717B1 (fr) 2010-03-22 2010-03-22 Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
US13/052,262 US8609530B2 (en) 2010-03-22 2011-03-21 Method for forming a three-dimensional structure of metal-insulator-metal type
US14/079,393 US9391015B2 (en) 2010-03-22 2013-11-13 Method for forming a three-dimensional structure of metal-insulator-metal type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052034A FR2957717B1 (fr) 2010-03-22 2010-03-22 Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle

Publications (2)

Publication Number Publication Date
FR2957717A1 FR2957717A1 (fr) 2011-09-23
FR2957717B1 true FR2957717B1 (fr) 2012-05-04

Family

ID=42169484

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052034A Expired - Fee Related FR2957717B1 (fr) 2010-03-22 2010-03-22 Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle

Country Status (2)

Country Link
US (2) US8609530B2 (fr)
FR (1) FR2957717B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2957717B1 (fr) * 2010-03-22 2012-05-04 St Microelectronics Sa Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
US9565766B2 (en) 2011-10-07 2017-02-07 Intel Corporation Formation of DRAM capacitor among metal interconnect
EP2711984A1 (fr) * 2012-09-21 2014-03-26 Nxp B.V. Condensateur métal-isolant-métal formé au sein d'une couche de métallisation d'un circuit intégré et son procédé de fabrication
US9337082B2 (en) * 2013-01-18 2016-05-10 Globalfoundries Inc. Metal lines having etch-bias independent height
US20160148868A1 (en) * 2014-11-25 2016-05-26 International Business Machines Corporation Precision intralevel metal capacitor fabrication
US9698213B1 (en) * 2016-09-28 2017-07-04 International Business Machines Corporation Vertical MIM capacitor
US10734475B2 (en) 2018-04-03 2020-08-04 International Business Machines Corporation Stacked MIM capacitors with self-aligned contact to reduce via enclosure
US20230095846A1 (en) * 2021-09-24 2023-03-30 Intel Corporation Glass substrates having transverse capacitors for use with semiconductor packages and related methods

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228707B1 (en) * 1999-06-21 2001-05-08 Philips Semiconductors, Inc. Semiconductor arrangement having capacitive structure and manufacture thereof
US6384468B1 (en) * 2000-02-07 2002-05-07 International Business Machines Corporation Capacitor and method for forming same
US6847077B2 (en) * 2002-06-25 2005-01-25 Agere Systems, Inc. Capacitor for a semiconductor device and method for fabrication therefor
CN100536109C (zh) * 2003-12-30 2009-09-02 中芯国际集成电路制造(上海)有限公司 用铜制造高电容量电容器的方法及其结构
JP4559757B2 (ja) * 2004-03-18 2010-10-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102004039803B4 (de) * 2004-08-17 2006-12-07 Infineon Technologies Ag Verfahren zur Herstellung einer Leitbahnanordnung mit erhöhter kapazitiver Kopplung sowie zugehörige Leitbahnanordnung
JP4365750B2 (ja) * 2004-08-20 2009-11-18 ローム株式会社 半導体チップの製造方法、および半導体装置の製造方法
US20060089001A1 (en) * 2004-10-27 2006-04-27 Erickson Sean C Localized use of high-K dielectric for high performance capacitor structures
KR100778865B1 (ko) * 2006-05-25 2007-11-22 동부일렉트로닉스 주식회사 엠아이엠 구조의 커패시터의 제조 방법
US7633112B2 (en) * 2006-08-24 2009-12-15 Samsung Electronics Co., Ltd. Metal-insulator-metal capacitor and method of manufacturing the same
CN101246910B (zh) * 2007-02-13 2012-06-06 中芯国际集成电路制造(上海)有限公司 金属-绝缘-金属型电容器及其制作方法
US7960290B2 (en) * 2007-05-02 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device
KR100881488B1 (ko) * 2007-09-06 2009-02-05 주식회사 동부하이텍 Ｍｉｍ 캐패시터를 갖는 반도체 소자 및 그의 제조방법
KR100937664B1 (ko) * 2007-12-26 2010-01-19 주식회사 동부하이텍 반도체 소자의 패드 및 그의 제조 방법
FR2925980B1 (fr) * 2007-12-28 2010-06-04 St Microelectronics Sa Plot de contact electrique
US8853830B2 (en) * 2008-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, structure, and method of manufacturing a semiconductor substrate stack
US8138036B2 (en) * 2008-08-08 2012-03-20 International Business Machines Corporation Through silicon via and method of fabricating same
US8035198B2 (en) * 2008-08-08 2011-10-11 International Business Machines Corporation Through wafer via and method of making same
US20100224960A1 (en) * 2009-03-04 2010-09-09 Kevin John Fischer Embedded capacitor device and methods of fabrication
FR2957717B1 (fr) * 2010-03-22 2012-05-04 St Microelectronics Sa Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
JP5613033B2 (ja) * 2010-05-19 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20120060029A (ko) * 2010-12-01 2012-06-11 삼성전자주식회사 반도체 기억 소자 및 반도체 기억 소자의 형성 방법
US20120256193A1 (en) * 2011-04-08 2012-10-11 Intersil Americas Inc. Monolithic integrated capacitors for high-efficiency power converters

Also Published As

Publication number Publication date
US8609530B2 (en) 2013-12-17
US20110227194A1 (en) 2011-09-22
US9391015B2 (en) 2016-07-12
FR2957717A1 (fr) 2011-09-23
US20140159202A1 (en) 2014-06-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131129