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FR2925980B1 - Plot de contact electrique - Google Patents

Plot de contact electrique

Info

Publication number
FR2925980B1
FR2925980B1 FR0760446A FR0760446A FR2925980B1 FR 2925980 B1 FR2925980 B1 FR 2925980B1 FR 0760446 A FR0760446 A FR 0760446A FR 0760446 A FR0760446 A FR 0760446A FR 2925980 B1 FR2925980 B1 FR 2925980B1
Authority
FR
France
Prior art keywords
electric contact
plot
contact plot
electric
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0760446A
Other languages
English (en)
Other versions
FR2925980A1 (fr
Inventor
Laurent Chabert
Sebastien Pruvost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0760446A priority Critical patent/FR2925980B1/fr
Priority to US12/344,035 priority patent/US20090166880A1/en
Publication of FR2925980A1 publication Critical patent/FR2925980A1/fr
Application granted granted Critical
Publication of FR2925980B1 publication Critical patent/FR2925980B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223Capacitor integral with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
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    • H01L2924/01005Boron [B]
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    • H01L2924/01013Aluminum [Al]
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    • H01L2924/01014Silicon [Si]
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    • H01L2924/01029Copper [Cu]
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/01033Arsenic [As]
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    • H01L2924/01058Cerium [Ce]
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    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/050414th Group
    • H01L2924/05042Si3N4
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    • H01L2924/14Integrated circuits
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    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance
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    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0760446A 2007-12-28 2007-12-28 Plot de contact electrique Expired - Fee Related FR2925980B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0760446A FR2925980B1 (fr) 2007-12-28 2007-12-28 Plot de contact electrique
US12/344,035 US20090166880A1 (en) 2007-12-28 2008-12-24 Electrical bonding pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0760446A FR2925980B1 (fr) 2007-12-28 2007-12-28 Plot de contact electrique

Publications (2)

Publication Number Publication Date
FR2925980A1 FR2925980A1 (fr) 2009-07-03
FR2925980B1 true FR2925980B1 (fr) 2010-06-04

Family

ID=39687061

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0760446A Expired - Fee Related FR2925980B1 (fr) 2007-12-28 2007-12-28 Plot de contact electrique

Country Status (2)

Country Link
US (1) US20090166880A1 (fr)
FR (1) FR2925980B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8879635B2 (en) 2005-09-27 2014-11-04 Qualcomm Incorporated Methods and device for data alignment with time domain boundary
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
FR2957717B1 (fr) * 2010-03-22 2012-05-04 St Microelectronics Sa Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
US9577025B2 (en) * 2014-01-31 2017-02-21 Qualcomm Incorporated Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211933A (ja) * 1988-02-19 1989-08-25 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
TW291595B (fr) * 1995-05-30 1996-11-21 At & T Corp
US6143396A (en) * 1997-05-01 2000-11-07 Texas Instruments Incorporated System and method for reinforcing a bond pad
US6448650B1 (en) * 1998-05-18 2002-09-10 Texas Instruments Incorporated Fine pitch system and method for reinforcing bond pads in semiconductor devices
TW430935B (en) * 1999-03-19 2001-04-21 Ind Tech Res Inst Frame type bonding pad structure having a low parasitic capacitance
WO2002071547A1 (fr) * 2001-03-02 2002-09-12 Koninklijke Philips Electronics N.V. Module et dispositif electronique
TWI222199B (en) * 2003-09-05 2004-10-11 Via Tech Inc Wire bond structure with improved matching impedance
WO2006039699A2 (fr) * 2004-10-01 2006-04-13 De Rochemont L Pierre Module d'antenne en ceramique et ses procedes de fabrication
US7619296B2 (en) * 2005-02-03 2009-11-17 Nec Electronics Corporation Circuit board and semiconductor device
DE102005008195A1 (de) * 2005-02-23 2006-08-24 Atmel Germany Gmbh Hochfrequenzanordnung
US7989895B2 (en) * 2006-11-15 2011-08-02 Avx Corporation Integration using package stacking with multi-layer organic substrates
US8115320B2 (en) * 2008-05-29 2012-02-14 United Microelectronics Corp. Bond pad structure located over active circuit structure
JP5714564B2 (ja) * 2009-03-30 2015-05-07 クゥアルコム・インコーポレイテッドQualcomm Incorporated 上部ポストパッシベーション技術および底部構造技術を使用する集積回路チップ

Also Published As

Publication number Publication date
FR2925980A1 (fr) 2009-07-03
US20090166880A1 (en) 2009-07-02

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Effective date: 20150831