FR2897472B1 - Photodetecteur monolithique - Google Patents

Photodetecteur monolithique

Info

Publication number: FR2897472B1
Authority: FR; France
Prior art keywords: monolithic photodetector; photodetector; monolithic
Prior art date: 2006-02-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR0650536A

Other languages

English (en)

Other versions

FR2897472A1 (fr

Inventor

Cyril Fellous

Nicolas Hotellier

Christophe Aumont

Francois Roy

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SA

Original Assignee

STMicroelectronics SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-02-14

Filing date

2006-02-14

Publication date

2008-09-05

2006-02-14 Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA

2006-02-14 Priority to FR0650536A priority Critical patent/FR2897472B1/fr

2007-02-14 Priority to US11/706,928 priority patent/US7663160B2/en

2007-08-17 Publication of FR2897472A1 publication Critical patent/FR2897472A1/fr

2008-09-05 Application granted granted Critical

2008-09-05 Publication of FR2897472B1 publication Critical patent/FR2897472B1/fr

2010-02-12 Priority to US12/704,797 priority patent/US8053801B2/en

2011-09-22 Priority to US13/241,109 priority patent/US20120007201A1/en

Status Expired - Fee Related legal-status Critical Current

2026-02-14 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Solid State Image Pick-Up Elements (AREA)
Optical Integrated Circuits (AREA)

FR0650536A 2006-02-14 2006-02-14 Photodetecteur monolithique Expired - Fee Related FR2897472B1 (fr)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
FR0650536A FR2897472B1 (fr)	2006-02-14	2006-02-14	Photodetecteur monolithique
US11/706,928 US7663160B2 (en)	2006-02-14	2007-02-14	Monolithic photodetector
US12/704,797 US8053801B2 (en)	2006-02-14	2010-02-12	Monolithic photodetector
US13/241,109 US20120007201A1 (en)	2006-02-14	2011-09-22	Monolithic photodetector

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR0650536A FR2897472B1 (fr)	2006-02-14	2006-02-14	Photodetecteur monolithique

Publications (2)

Publication Number	Publication Date
FR2897472A1 FR2897472A1 (fr)	2007-08-17
FR2897472B1 true FR2897472B1 (fr)	2008-09-05

Family

ID=37035344

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR0650536A Expired - Fee Related FR2897472B1 (fr)	2006-02-14	2006-02-14	Photodetecteur monolithique

Country Status (2)

Country	Link
US (3)	US7663160B2 (fr)
FR (1)	FR2897472B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2897472B1 (fr) *	2006-02-14	2008-09-05	St Microelectronics Sa	Photodetecteur monolithique
US8885987B2 (en) *	2007-09-06	2014-11-11	Quantum Semiconductor Llc	Photonic via waveguide for pixel arrays
KR100896879B1 (ko) *	2007-10-31	2009-05-12	주식회사 동부하이텍	이미지 센서 및 그 제조방법
FR2964795B1 (fr) *	2010-09-09	2013-09-27	Commissariat Energie Atomique	Photodetecteur et matrice de détection correspondante
US9293488B2 (en) *	2014-05-07	2016-03-22	Visera Technologies Company Limited	Image sensing device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5408547A (en) *	1993-02-19	1995-04-18	Motorola, Inc.	Optical read/write head
US5972516A (en) *	1996-02-29	1999-10-26	Kyocera Corporation	Method for manufacturing optical waveguide using siloxane polymer, and optoelectronic hybrid substrate using the optical waveguide
JPH1168074A (ja) *	1997-08-13	1999-03-09	Sony Corp	固体撮像素子
TW396645B (en) *	1998-06-16	2000-07-01	United Microelectronics Corp	Manufacturing method of CMOS sensor devices
US6410149B1 (en) *	1998-08-27	2002-06-25	Alliedsignal Inc.	Silane-based nanoporous silica thin films and precursors for making same
US6632892B2 (en) *	2001-08-21	2003-10-14	General Electric Company	Composition comprising silicone epoxy resin, hydroxyl compound, anhydride and curing catalyst
FR2829876B1 (fr)	2001-09-18	2004-07-02	St Microelectronics Sa	Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
US6832036B2 (en) *	2002-10-11	2004-12-14	Polyset Company, Inc.	Siloxane optical waveguides
GB2403847B (en) *	2003-07-01	2005-11-16	Micron Technology Inc	Optical channels for multi-level metal optical imagers and method for manufacturing same
US6969899B2 (en) *	2003-12-08	2005-11-29	Taiwan Semiconductor Manufacturing Co., Ltd.	Image sensor with light guides
US7592645B2 (en) *	2004-12-08	2009-09-22	Canon Kabushiki Kaisha	Photoelectric conversion device and method for producing photoelectric conversion device
US7326442B2 (en) *	2005-07-14	2008-02-05	International Business Machines Corporation	Antireflective composition and process of making a lithographic structure
US20070153105A1 (en) *	2005-12-29	2007-07-05	Sung Chih-Ta S	Method and device of high efficiency image capturing
FR2897472B1 (fr)	2006-02-14	2008-09-05	St Microelectronics Sa	Photodetecteur monolithique

2006
- 2006-02-14 FR FR0650536A patent/FR2897472B1/fr not_active Expired - Fee Related
2007
- 2007-02-14 US US11/706,928 patent/US7663160B2/en not_active Expired - Fee Related
2010
- 2010-02-12 US US12/704,797 patent/US8053801B2/en not_active Expired - Fee Related
2011
- 2011-09-22 US US13/241,109 patent/US20120007201A1/en not_active Abandoned

Also Published As

Publication number	Publication date
US20100144388A1 (en)	2010-06-10
US7663160B2 (en)	2010-02-16
US20070187733A1 (en)	2007-08-16
US20120007201A1 (en)	2012-01-12
US8053801B2 (en)	2011-11-08
FR2897472A1 (fr)	2007-08-17

Publication	Publication Date	Title
NL301163I2 (nl)	2022-03-22	tafasitamab
NL301077I2 (nl)	2021-02-03	isatuximab
EP2060887A4 (fr)	2014-01-22	Photodétecteur
EP1984575A4 (fr)	2014-04-02	Ensemble d'usure
DE602007000258D1 (de)	2009-01-02	Kassetteneinspannmechanismus
AT504580A3 (de)	2008-07-15	Scan-einrichtung
EP2091731A4 (fr)	2012-08-22	Stratifiés de préimprégnés
ATE546437T1 (de)	2012-03-15	Aminomethyl-4-imidazole
DE502007000218D1 (de)	2008-12-18	nsetzungen
DK1742168T3 (da)	2016-03-07	Optoelektronisk sensor
DE502007001629D1 (de)	2009-11-12	Rfahren
DE502007002453D1 (de)	2010-02-11	Kunstoffverdichtergehäuse
ATE534010T1 (de)	2011-12-15	Zielfernrohr
DE502007000361D1 (de)	2009-02-26	Stanznieteinheit
DE102006045567A8 (de)	2008-09-11	Crimpstabilisierung
EP2077583A4 (fr)	2012-05-09	Photodétecteur
DE112007003147A5 (de)	2009-09-24	Rohr-Biegevorrichtung
DE502007001652D1 (de)	2009-11-12	Notöltank
DE602007008903D1 (de)	2010-10-14	Auspuffrohrstruktur
BRPI0719956A2 (pt)	2014-04-29	Radiofluoração
FR2897472B1 (fr)	2008-09-05	Photodetecteur monolithique
FI7587U1 (fi)	2007-08-09	Vetovoimamittalaite
DE112007001125A5 (de)	2009-02-05	Käfigmutter
EP2077582A4 (fr)	2012-05-02	Photodétecteur
DE112007001763A5 (de)	2009-09-24	Schaltungsanordnung

Legal Events

Date	Code	Title	Description
2014-11-21	ST	Notification of lapse	Effective date: 20141031