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FR2859312B1 - Scellement metallique multifonction - Google Patents

Scellement metallique multifonction

Info

Publication number
FR2859312B1
FR2859312B1 FR0310369A FR0310369A FR2859312B1 FR 2859312 B1 FR2859312 B1 FR 2859312B1 FR 0310369 A FR0310369 A FR 0310369A FR 0310369 A FR0310369 A FR 0310369A FR 2859312 B1 FR2859312 B1 FR 2859312B1
Authority
FR
France
Prior art keywords
metal seal
multifunctional metal
multifunctional
seal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0310369A
Other languages
English (en)
Other versions
FR2859312A1 (fr
Inventor
Sebastien Kerdiles
Fabrice Letertre
Hubert Moriceau
Christophe Morales
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0310369A priority Critical patent/FR2859312B1/fr
Priority to US10/744,867 priority patent/US7189632B2/en
Priority to EP04787275A priority patent/EP1661175A1/fr
Priority to PCT/FR2004/002219 priority patent/WO2005024934A1/fr
Priority to JP2006525161A priority patent/JP4490424B2/ja
Priority to CNA200480027890XA priority patent/CN1856874A/zh
Priority to KR1020067004346A priority patent/KR100878915B1/ko
Priority to KR1020087007939A priority patent/KR100896095B1/ko
Priority to TW093126531A priority patent/TWI267167B/zh
Publication of FR2859312A1 publication Critical patent/FR2859312A1/fr
Application granted granted Critical
Publication of FR2859312B1 publication Critical patent/FR2859312B1/fr
Priority to US11/447,863 priority patent/US7232739B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
FR0310369A 2003-09-02 2003-09-02 Scellement metallique multifonction Expired - Lifetime FR2859312B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR0310369A FR2859312B1 (fr) 2003-09-02 2003-09-02 Scellement metallique multifonction
US10/744,867 US7189632B2 (en) 2003-09-02 2003-12-22 Multifunctional metallic bonding
PCT/FR2004/002219 WO2005024934A1 (fr) 2003-09-02 2004-09-01 Scellement metallique multifonction
JP2006525161A JP4490424B2 (ja) 2003-09-02 2004-09-01 多目的金属製シーリング材
CNA200480027890XA CN1856874A (zh) 2003-09-02 2004-09-01 多用途金属密封
KR1020067004346A KR100878915B1 (ko) 2003-09-02 2004-09-01 다목적 금속 실링
EP04787275A EP1661175A1 (fr) 2003-09-02 2004-09-01 Scellement metallique multifonction
KR1020087007939A KR100896095B1 (ko) 2003-09-02 2004-09-01 기판상에 반도체 재료로 된 박층을 제작하는 방법 및 중간 기판
TW093126531A TWI267167B (en) 2003-09-02 2004-09-02 Multifunctional metallic bonding
US11/447,863 US7232739B2 (en) 2003-09-02 2006-06-07 Multifunctional metallic bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0310369A FR2859312B1 (fr) 2003-09-02 2003-09-02 Scellement metallique multifonction

Publications (2)

Publication Number Publication Date
FR2859312A1 FR2859312A1 (fr) 2005-03-04
FR2859312B1 true FR2859312B1 (fr) 2006-02-17

Family

ID=34130702

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0310369A Expired - Lifetime FR2859312B1 (fr) 2003-09-02 2003-09-02 Scellement metallique multifonction

Country Status (8)

Country Link
US (2) US7189632B2 (fr)
EP (1) EP1661175A1 (fr)
JP (1) JP4490424B2 (fr)
KR (2) KR100878915B1 (fr)
CN (1) CN1856874A (fr)
FR (1) FR2859312B1 (fr)
TW (1) TWI267167B (fr)
WO (1) WO2005024934A1 (fr)

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US7161169B2 (en) * 2004-01-07 2007-01-09 International Business Machines Corporation Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
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US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
TWI246784B (en) * 2004-12-29 2006-01-01 Univ Nat Central Light emitting diode and manufacturing method thereof
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
TWI285969B (en) * 2005-06-22 2007-08-21 Epistar Corp Light emitting diode and method of the same
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DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102005052357A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
WO2007040295A1 (fr) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. Semi-conducteur à composé à base de (al, ga, in)n et son procédé de fabrication
TWI298555B (en) * 2006-06-05 2008-07-01 Epistar Corp Light emitting device
TWI370555B (en) * 2006-12-29 2012-08-11 Epistar Corp Light-emitting diode and method for manufacturing the same
JP5228381B2 (ja) * 2007-06-25 2013-07-03 三菱電機株式会社 半導体装置の製造方法
US20090181492A1 (en) * 2008-01-11 2009-07-16 Peter Nunan Nano-cleave a thin-film of silicon for solar cell fabrication
TWI495141B (zh) * 2008-08-01 2015-08-01 Epistar Corp 晶圓發光結構之形成方法及光源產生裝置
TWI455252B (zh) * 2008-08-28 2014-10-01 玉晶光電股份有限公司 A mold release mechanism for a light emitting diode package process
US8058143B2 (en) * 2009-01-21 2011-11-15 Freescale Semiconductor, Inc. Substrate bonding with metal germanium silicon material
US9847243B2 (en) 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
JP6027970B2 (ja) * 2010-09-10 2016-11-16 バーレイス テクノロジーズ エルエルシー 半導体ドナーから分離された層を使用するオプトエレクトロニクスデバイスの製造方法、およびそれによって製造されたデバイス
KR20120052160A (ko) * 2010-11-15 2012-05-23 엔지케이 인슐레이터 엘티디 복합 기판 및 복합 기판의 제조 방법
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
CN102255027B (zh) * 2011-07-15 2013-05-29 上海蓝光科技有限公司 一种GaN基垂直结构LED芯片结构及其制备方法
US9343641B2 (en) * 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9064980B2 (en) * 2011-08-25 2015-06-23 Palo Alto Research Center Incorporated Devices having removed aluminum nitride sections
KR20130060065A (ko) * 2011-11-29 2013-06-07 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 이의 제조 방법
EP2600389B1 (fr) * 2011-11-29 2020-01-15 IMEC vzw Procédé pour la liaison de substrats semi-conducteurs
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
TWI617437B (zh) 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
EP3099483B1 (fr) 2014-01-27 2022-06-01 Corning Incorporated Articles et procédés pour la liaison contrôlée de feuilles minces avec des supports
EP3129221A1 (fr) 2014-04-09 2017-02-15 Corning Incorporated Article de substrat modifié de dispositif et procédés de fabrication
CN103996755B (zh) * 2014-05-21 2016-08-17 天津三安光电有限公司 一种氮化物发光二极管组件的制备方法
CN107635769B (zh) 2015-05-19 2020-09-15 康宁股份有限公司 使片材与载体粘结的制品和方法
KR102524620B1 (ko) 2015-06-26 2023-04-21 코닝 인코포레이티드 시트 및 캐리어를 포함하는 방법들 및 물품들
US9865565B2 (en) * 2015-12-08 2018-01-09 Amkor Technology, Inc. Transient interface gradient bonding for metal bonds
TW202216444A (zh) 2016-08-30 2022-05-01 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
WO2019036710A1 (fr) 2017-08-18 2019-02-21 Corning Incorporated Liaison temporaire à l'aide de polymères polycationiques
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Also Published As

Publication number Publication date
KR20060082855A (ko) 2006-07-19
US7189632B2 (en) 2007-03-13
TW200531205A (en) 2005-09-16
KR100896095B1 (ko) 2009-05-06
EP1661175A1 (fr) 2006-05-31
CN1856874A (zh) 2006-11-01
WO2005024934A1 (fr) 2005-03-17
JP2007504658A (ja) 2007-03-01
TWI267167B (en) 2006-11-21
US7232739B2 (en) 2007-06-19
KR100878915B1 (ko) 2009-01-15
KR20080055877A (ko) 2008-06-19
US20050048739A1 (en) 2005-03-03
JP4490424B2 (ja) 2010-06-23
FR2859312A1 (fr) 2005-03-04
US20060228820A1 (en) 2006-10-12

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