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FR2851373B1 - Procede de fabrication d'un circuit electronique integre incorporant des cavites - Google Patents

Procede de fabrication d'un circuit electronique integre incorporant des cavites

Info

Publication number
FR2851373B1
FR2851373B1 FR0301978A FR0301978A FR2851373B1 FR 2851373 B1 FR2851373 B1 FR 2851373B1 FR 0301978 A FR0301978 A FR 0301978A FR 0301978 A FR0301978 A FR 0301978A FR 2851373 B1 FR2851373 B1 FR 2851373B1
Authority
FR
France
Prior art keywords
manufacturing
electronic circuit
integrated electronic
circuit incorporating
incorporating cavities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0301978A
Other languages
English (en)
Other versions
FR2851373A1 (fr
Inventor
Joaquim Torres
Vincent Arnal
Laurent Gosset
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Koninklijke Philips NV
Original Assignee
STMicroelectronics SA
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, Koninklijke Philips Electronics NV filed Critical STMicroelectronics SA
Priority to FR0301978A priority Critical patent/FR2851373B1/fr
Priority to US10/781,565 priority patent/US7172980B2/en
Publication of FR2851373A1 publication Critical patent/FR2851373A1/fr
Application granted granted Critical
Publication of FR2851373B1 publication Critical patent/FR2851373B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR0301978A 2003-02-18 2003-02-18 Procede de fabrication d'un circuit electronique integre incorporant des cavites Expired - Fee Related FR2851373B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0301978A FR2851373B1 (fr) 2003-02-18 2003-02-18 Procede de fabrication d'un circuit electronique integre incorporant des cavites
US10/781,565 US7172980B2 (en) 2003-02-18 2004-02-18 Process for fabricating an integrated electronic circuit that incorporates air gaps

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0301978A FR2851373B1 (fr) 2003-02-18 2003-02-18 Procede de fabrication d'un circuit electronique integre incorporant des cavites

Publications (2)

Publication Number Publication Date
FR2851373A1 FR2851373A1 (fr) 2004-08-20
FR2851373B1 true FR2851373B1 (fr) 2006-01-13

Family

ID=32749660

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0301978A Expired - Fee Related FR2851373B1 (fr) 2003-02-18 2003-02-18 Procede de fabrication d'un circuit electronique integre incorporant des cavites

Country Status (2)

Country Link
US (1) US7172980B2 (fr)
FR (1) FR2851373B1 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8111401B2 (en) * 1999-11-05 2012-02-07 Robert Magnusson Guided-mode resonance sensors employing angular, spectral, modal, and polarization diversity for high-precision sensing in compact formats
US7167615B1 (en) * 1999-11-05 2007-01-23 Board Of Regents, The University Of Texas System Resonant waveguide-grating filters and sensors and methods for making and using same
US7078814B2 (en) * 2004-05-25 2006-07-18 International Business Machines Corporation Method of forming a semiconductor device having air gaps and the structure so formed
EP1742260A3 (fr) * 2005-07-08 2011-10-26 STMicroelectronics (Crolles 2) SAS Contrôle de la distribution latérale des espaces d'air pour interconnexions
JP2007019508A (ja) * 2005-07-08 2007-01-25 Stmicroelectronics (Crolles 2) Sas 相互接続配線内における複数のエアギャップの横方向分布の制御
US20070218677A1 (en) * 2006-03-15 2007-09-20 Manfred Engelhardt Method of Forming Self-Aligned Air-Gaps Using Self-Aligned Capping Layer over Interconnect Lines
WO2007113108A1 (fr) * 2006-03-30 2007-10-11 Koninklijke Philips Electronics N.V. amélioration du contrôle de la formation de bulles d'air localisées dans un empilement interconnecté
CN102124553A (zh) * 2006-08-01 2011-07-13 Nxp股份有限公司 包含要求金属层与衬底之间的电压阈值的工艺的用于制造集成电子电路的工艺
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
TWI321819B (en) * 2006-11-27 2010-03-11 Innolux Display Corp Metal line damascene structure and fabricating method for the same
US7608538B2 (en) 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
FR2913816B1 (fr) 2007-03-16 2009-06-05 Commissariat Energie Atomique Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre
FR2916303B1 (fr) * 2007-05-15 2009-07-31 Commissariat Energie Atomique Procede de fabrication de cavites d'air utilisant des nanotubes
FR2919111B1 (fr) * 2007-07-17 2009-10-09 Commissariat Energie Atomique Procede de fabrication d'une connexion electrique a base de nanotubes et ayant des cavites d'air
DE102009010845B4 (de) * 2009-02-27 2016-10-13 Advanced Micro Devices, Inc. Verfahren zur Herstellung eines Mikrostrukturbauelements mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten und wieder aufgefüllten Luftspaltausschließungszonen
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
JP5110178B2 (ja) * 2010-04-13 2012-12-26 株式会社デンソー 半導体装置およびその製造方法
US8530347B2 (en) * 2010-10-05 2013-09-10 Freescale Semiconductor, Inc. Electronic device including interconnects with a cavity therebetween and a process of forming the same
US20130323930A1 (en) * 2012-05-29 2013-12-05 Kaushik Chattopadhyay Selective Capping of Metal Interconnect Lines during Air Gap Formation
US9105634B2 (en) 2012-06-29 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in interconnect structures and methods for forming the same
US9601630B2 (en) 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
US9748356B2 (en) 2012-09-25 2017-08-29 Stmicroelectronics, Inc. Threshold adjustment for quantum dot array devices with metal source and drain
US10002938B2 (en) 2013-08-20 2018-06-19 Stmicroelectronics, Inc. Atomic layer deposition of selected molecular clusters
US9214429B2 (en) 2013-12-05 2015-12-15 Stmicroelectronics, Inc. Trench interconnect having reduced fringe capacitance
US20150162277A1 (en) 2013-12-05 2015-06-11 International Business Machines Corporation Advanced interconnect with air gap
US9627318B2 (en) * 2014-06-16 2017-04-18 Taiwan Semiconductor Manufacturing Company Ltd. Interconnect structure with footing region
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
CN107680953B (zh) * 2017-11-09 2023-12-08 长鑫存储技术有限公司 金属内连线的互连结构及其形成方法、半导体器件
US10395980B1 (en) 2018-02-21 2019-08-27 Globalfoundries Inc. Dual airgap structure
US10672710B2 (en) 2018-06-05 2020-06-02 Globalfoundries Inc. Interconnect structures with reduced capacitance

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
JP2962272B2 (ja) 1997-04-18 1999-10-12 日本電気株式会社 半導体装置の製造方法
JP2921759B1 (ja) * 1998-03-31 1999-07-19 株式会社半導体理工学研究センター 半導体装置の製造方法
FR2784230B1 (fr) 1998-10-05 2000-12-29 St Microelectronics Sa Procede de realisation d'un isolement inter et/ou intra-metallique par air dans un circuit integre et circuit integre obtenu
US6245658B1 (en) * 1999-02-18 2001-06-12 Advanced Micro Devices, Inc. Method of forming low dielectric semiconductor device with rigid, metal silicide lined interconnection system
US6306754B1 (en) * 1999-06-29 2001-10-23 Micron Technology, Inc. Method for forming wiring with extremely low parasitic capacitance
US6265321B1 (en) * 2000-04-17 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Air bridge process for forming air gaps
US6509623B2 (en) * 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
TWI227043B (en) * 2000-09-01 2005-01-21 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device
TW476135B (en) * 2001-01-09 2002-02-11 United Microelectronics Corp Manufacture of semiconductor with air gap
US6780753B2 (en) * 2002-05-31 2004-08-24 Applied Materials Inc. Airgap for semiconductor devices

Also Published As

Publication number Publication date
US7172980B2 (en) 2007-02-06
US20040229454A1 (en) 2004-11-18
FR2851373A1 (fr) 2004-08-20

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Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20121031