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DE60322826D1 - Integrierte Schaltung - Google Patents

Integrierte Schaltung

Info

Publication number
DE60322826D1
DE60322826D1 DE60322826T DE60322826T DE60322826D1 DE 60322826 D1 DE60322826 D1 DE 60322826D1 DE 60322826 T DE60322826 T DE 60322826T DE 60322826 T DE60322826 T DE 60322826T DE 60322826 D1 DE60322826 D1 DE 60322826D1
Authority
DE
Germany
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60322826T
Other languages
English (en)
Inventor
Hideaki Tsuchiko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Micrel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micrel Inc filed Critical Micrel Inc
Application granted granted Critical
Publication of DE60322826D1 publication Critical patent/DE60322826D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60322826T 2002-12-17 2003-12-12 Integrierte Schaltung Expired - Lifetime DE60322826D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/323,965 US7019377B2 (en) 2002-12-17 2002-12-17 Integrated circuit including high voltage devices and low voltage devices

Publications (1)

Publication Number Publication Date
DE60322826D1 true DE60322826D1 (de) 2008-09-25

Family

ID=32393050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60322826T Expired - Lifetime DE60322826D1 (de) 2002-12-17 2003-12-12 Integrierte Schaltung

Country Status (3)

Country Link
US (3) US7019377B2 (de)
EP (1) EP1432038B1 (de)
DE (1) DE60322826D1 (de)

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US7176532B2 (en) * 2004-07-22 2007-02-13 Dialog Semiconductor Gmbh CMOS active pixel sensor with improved dark current and sensitivity
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CN102623509A (zh) * 2012-04-19 2012-08-01 成都芯源系统有限公司 高压开关器件及其制作方法
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CN102637725B (zh) * 2012-04-26 2014-07-16 杭州士兰集成电路有限公司 采用Bipolar低压工艺实现的器件及其制造方法
CN102709324B (zh) * 2012-06-06 2014-12-10 苏州博创集成电路设计有限公司 一种低功耗高压驱动电路及其使用的双向p型开关管
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CN107680908A (zh) * 2016-08-01 2018-02-09 中芯国际集成电路制造(北京)有限公司 高压半导体器件及其制备方法
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Also Published As

Publication number Publication date
EP1432038A2 (de) 2004-06-23
US20040113204A1 (en) 2004-06-17
US7759759B2 (en) 2010-07-20
EP1432038A3 (de) 2006-03-08
EP1432038B1 (de) 2008-08-13
US20050253216A1 (en) 2005-11-17
US20050258496A1 (en) 2005-11-24
US7019377B2 (en) 2006-03-28

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