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FR2779007B1 - Procede de formation d'une structure conductrice - Google Patents

Procede de formation d'une structure conductrice

Info

Publication number
FR2779007B1
FR2779007B1 FR9906508A FR9906508A FR2779007B1 FR 2779007 B1 FR2779007 B1 FR 2779007B1 FR 9906508 A FR9906508 A FR 9906508A FR 9906508 A FR9906508 A FR 9906508A FR 2779007 B1 FR2779007 B1 FR 2779007B1
Authority
FR
France
Prior art keywords
forming
conductive structure
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9906508A
Other languages
English (en)
Other versions
FR2779007A1 (fr
Inventor
Boris Aronovich Gurovich
Dmitry Losifivich Dolgy
Evgeny Pavlovich Velikhov
Evgenia Anatolievna Kuleshova
Boris Aronovich Aronzon
Evgeny Zalmanovich Meilikhov
Evgeny Petrovich Ryazantsev
Vladimir Vasilievich Rylkov
Kirill Evgenievich Prikhodko
Alexandr Grigoriev Domantovsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2779007A1 publication Critical patent/FR2779007A1/fr
Application granted granted Critical
Publication of FR2779007B1 publication Critical patent/FR2779007B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electron Beam Exposure (AREA)
FR9906508A 1998-05-22 1999-05-21 Procede de formation d'une structure conductrice Expired - Fee Related FR2779007B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU98109498/25A RU2129320C1 (ru) 1998-05-22 1998-05-22 Способ формирования проводящей структуры

Publications (2)

Publication Number Publication Date
FR2779007A1 FR2779007A1 (fr) 1999-11-26
FR2779007B1 true FR2779007B1 (fr) 2002-06-14

Family

ID=20206194

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9906508A Expired - Fee Related FR2779007B1 (fr) 1998-05-22 1999-05-21 Procede de formation d'une structure conductrice

Country Status (7)

Country Link
US (1) US6218278B1 (fr)
KR (1) KR19990088479A (fr)
DE (1) DE19922759A1 (fr)
FR (1) FR2779007B1 (fr)
GB (1) GB2337635B (fr)
NL (1) NL1012117C2 (fr)
RU (1) RU2129320C1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19934089A1 (de) * 1999-07-19 2001-01-25 Univ Schiller Jena Verfahren zur Erzeugung elektrisch leitender Bereiche in mehrkomponentigen Materialien
WO2003009359A1 (fr) * 2001-07-16 2003-01-30 Boris Aronovich Gurovich Procede de formation d'une structure a couches multiples a parametres predetermines
RU2205469C1 (ru) * 2002-04-18 2003-05-27 Гурович Борис Аронович Способ получения объемной проводящей структуры
US7294449B1 (en) 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
MD152Z (ro) * 2009-03-10 2010-09-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de formare a unei microstructuri tridimensionale
RU2477902C1 (ru) * 2011-10-04 2013-03-20 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Способ формирования проводников в наноструктурах

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4938996A (en) * 1988-04-12 1990-07-03 Ziv Alan R Via filling by selective laser chemical vapor deposition
US5060595A (en) * 1988-04-12 1991-10-29 Ziv Alan R Via filling by selective laser chemical vapor deposition
US4960613A (en) * 1988-10-04 1990-10-02 General Electric Company Laser interconnect process
CA2002213C (fr) * 1988-11-10 1999-03-30 Iwona Turlik Boitier de puce de circuits integres a haute performance et sa methode de fabrication
US5075243A (en) * 1989-08-10 1991-12-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of nanometer single crystal metallic CoSi2 structures on Si
US5064685A (en) * 1989-08-23 1991-11-12 At&T Laboratories Electrical conductor deposition method
US5106779A (en) * 1990-12-06 1992-04-21 Micron Technology, Inc. Method for widening the laser planarization process window for metalized films on semiconductor wafers
JPH04247681A (ja) * 1991-02-04 1992-09-03 Fujitsu Ltd 導体パターンの形成方法
JPH088225B2 (ja) * 1991-12-17 1996-01-29 インターナショナル・ビジネス・マシーンズ・コーポレイション 改良された半導体用局部的相互接続
US5459098A (en) * 1992-10-19 1995-10-17 Marietta Energy Systems, Inc. Maskless laser writing of microscopic metallic interconnects
CA2149645A1 (fr) * 1992-11-19 1994-05-26 James Thomson Methode de deposition
US5559057A (en) 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
JP3402821B2 (ja) * 1995-02-09 2003-05-06 科学技術振興事業団 超微粒子の製造方法と超微粒子配向成長体の製造方法
US5759906A (en) * 1997-04-11 1998-06-02 Industrial Technology Research Institute Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits
US6069380A (en) * 1997-07-25 2000-05-30 Regents Of The University Of Minnesota Single-electron floating-gate MOS memory

Also Published As

Publication number Publication date
NL1012117A1 (nl) 1999-11-24
DE19922759A1 (de) 1999-11-25
GB9911764D0 (en) 1999-07-21
KR19990088479A (ko) 1999-12-27
GB2337635B (en) 2003-03-26
FR2779007A1 (fr) 1999-11-26
NL1012117C2 (nl) 2001-08-14
RU2129320C1 (ru) 1999-04-20
US6218278B1 (en) 2001-04-17
GB2337635A (en) 1999-11-24

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse