FR2773012B1 - Dispositif a pompe de charges negatives - Google Patents
Dispositif a pompe de charges negativesInfo
- Publication number
- FR2773012B1 FR2773012B1 FR9716464A FR9716464A FR2773012B1 FR 2773012 B1 FR2773012 B1 FR 2773012B1 FR 9716464 A FR9716464 A FR 9716464A FR 9716464 A FR9716464 A FR 9716464A FR 2773012 B1 FR2773012 B1 FR 2773012B1
- Authority
- FR
- France
- Prior art keywords
- charge pump
- pump device
- negative charge
- negative
- pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716464A FR2773012B1 (fr) | 1997-12-24 | 1997-12-24 | Dispositif a pompe de charges negatives |
US09/221,224 US6239651B1 (en) | 1997-12-24 | 1998-12-23 | Negative load pump device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716464A FR2773012B1 (fr) | 1997-12-24 | 1997-12-24 | Dispositif a pompe de charges negatives |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2773012A1 FR2773012A1 (fr) | 1999-06-25 |
FR2773012B1 true FR2773012B1 (fr) | 2001-02-02 |
Family
ID=9515098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9716464A Expired - Fee Related FR2773012B1 (fr) | 1997-12-24 | 1997-12-24 | Dispositif a pompe de charges negatives |
Country Status (2)
Country | Link |
---|---|
US (1) | US6239651B1 (fr) |
FR (1) | FR2773012B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7250807B1 (en) * | 2003-06-05 | 2007-07-31 | National Semiconductor Corporation | Threshold scaling circuit that minimizes leakage current |
WO2010019286A2 (fr) | 2008-04-07 | 2010-02-18 | Alien Technology Corporation | Sélection de sous-ensembles de marqueurs utilisant la lumière |
JP6289974B2 (ja) * | 2014-03-31 | 2018-03-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN106485290B (zh) | 2015-08-24 | 2019-08-13 | 瑞章科技有限公司 | 增强标签反向散射能量的装置及方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2035629B (en) * | 1978-07-21 | 1983-02-09 | Rca Corp | Regulated high voltage power supply |
US4585954A (en) | 1983-07-08 | 1986-04-29 | Texas Instruments Incorporated | Substrate bias generator for dynamic RAM having variable pump current level |
NL8702734A (nl) * | 1987-11-17 | 1989-06-16 | Philips Nv | Spanningsvermenigvuldigschakeling en gelijkrichtelement. |
US4883976A (en) | 1987-12-02 | 1989-11-28 | Xicor, Inc. | Low power dual-mode CMOS bias voltage generator |
JPH04129264A (ja) * | 1990-09-20 | 1992-04-30 | Fujitsu Ltd | 半導体集積回路 |
US5168174A (en) * | 1991-07-12 | 1992-12-01 | Texas Instruments Incorporated | Negative-voltage charge pump with feedback control |
KR940005691B1 (ko) * | 1991-10-25 | 1994-06-22 | 삼성전자 주식회사 | 기판전압 발생 장치의 차아지 펌프회로 |
US5191232A (en) * | 1992-03-17 | 1993-03-02 | Silicon Storage Technology, Inc. | High frequency voltage multiplier for an electrically erasable and programmable memory device |
JP2771729B2 (ja) * | 1992-04-16 | 1998-07-02 | 三菱電機株式会社 | チャージポンプ回路 |
US5347171A (en) * | 1992-10-15 | 1994-09-13 | United Memories, Inc. | Efficient negative charge pump |
US5337284A (en) | 1993-01-11 | 1994-08-09 | United Memories, Inc. | High voltage generator having a self-timed clock circuit and charge pump, and a method therefor |
US5347172A (en) | 1992-10-22 | 1994-09-13 | United Memories, Inc. | Oscillatorless substrate bias generator |
JP3307453B2 (ja) * | 1993-03-18 | 2002-07-24 | ソニー株式会社 | 昇圧回路 |
US5399928A (en) * | 1993-05-28 | 1995-03-21 | Macronix International Co., Ltd. | Negative voltage generator for flash EPROM design |
US5386151A (en) * | 1993-08-11 | 1995-01-31 | Advanced Micro Devices, Inc. | Low voltage charge pumps using p-well driven MOS capacitors |
US7102422B1 (en) * | 1994-04-20 | 2006-09-05 | Nippon Steel Corporation | Semiconductor booster circuit having cascaded MOS transistors |
EP0819335B1 (fr) * | 1995-03-09 | 2004-06-02 | Macronix International Co., Ltd. | Circuit a tension de reference regulee pour dispositif a memoire flash et autres applications de circuits integres |
US5694072A (en) | 1995-08-28 | 1997-12-02 | Pericom Semiconductor Corp. | Programmable substrate bias generator with current-mirrored differential comparator and isolated bulk-node sensing transistor for bias voltage control |
KR0167692B1 (ko) * | 1995-09-14 | 1999-02-01 | 김광호 | 반도체 메모리장치의 차아지 펌프회로 |
KR100208443B1 (ko) * | 1995-10-14 | 1999-07-15 | 김영환 | 네가티브 전압 구동회로 |
DE69515669T2 (de) * | 1995-10-31 | 2000-07-27 | Stmicroelectronics S.R.L., Agrate Brianza | Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung |
JP3533306B2 (ja) | 1996-04-02 | 2004-05-31 | 株式会社東芝 | 半導体集積回路装置 |
JP3394133B2 (ja) * | 1996-06-12 | 2003-04-07 | 沖電気工業株式会社 | 昇圧回路 |
US6064250A (en) | 1996-07-29 | 2000-05-16 | Townsend And Townsend And Crew Llp | Various embodiments for a low power adaptive charge pump circuit |
KR100234701B1 (ko) * | 1996-12-05 | 1999-12-15 | 김영환 | 외부전압에 둔감한 백바이어스전압 레벨 감지기 |
US6116585A (en) * | 1997-08-11 | 2000-09-12 | Mannesmann Sachs Ag | Pressure holder with an enclosed gas mass |
JP3223504B2 (ja) * | 1998-03-31 | 2001-10-29 | 日本電気株式会社 | 昇圧回路 |
-
1997
- 1997-12-24 FR FR9716464A patent/FR2773012B1/fr not_active Expired - Fee Related
-
1998
- 1998-12-23 US US09/221,224 patent/US6239651B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6239651B1 (en) | 2001-05-29 |
FR2773012A1 (fr) | 1999-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070831 |