FR2752485B1 - METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A CAPACITOR - Google Patents
METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A CAPACITORInfo
- Publication number
- FR2752485B1 FR2752485B1 FR9705120A FR9705120A FR2752485B1 FR 2752485 B1 FR2752485 B1 FR 2752485B1 FR 9705120 A FR9705120 A FR 9705120A FR 9705120 A FR9705120 A FR 9705120A FR 2752485 B1 FR2752485 B1 FR 2752485B1
- Authority
- FR
- France
- Prior art keywords
- capacitor
- manufacturing
- memory device
- semiconductor memory
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085110000A TW312828B (en) | 1996-08-16 | 1996-08-16 | Manufacturing method of semiconductor memory device with capacitor(5) |
| GB9701924A GB2321772A (en) | 1996-08-16 | 1997-01-30 | A method of fabricating a semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2752485A1 FR2752485A1 (en) | 1998-02-20 |
| FR2752485B1 true FR2752485B1 (en) | 2001-05-25 |
Family
ID=26310895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9705120A Expired - Fee Related FR2752485B1 (en) | 1996-08-16 | 1997-04-25 | METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A CAPACITOR |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH1079489A (en) |
| DE (1) | DE19720204A1 (en) |
| FR (1) | FR2752485B1 (en) |
| GB (1) | GB2321772A (en) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164337A (en) * | 1989-11-01 | 1992-11-17 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device having a capacitor in a stacked memory cell |
| KR930002292B1 (en) * | 1990-06-02 | 1993-03-29 | 삼성전자 주식회사 | Semiconductor device and method for manufacturing thereof |
| JPH04276656A (en) * | 1991-03-05 | 1992-10-01 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| US5254218A (en) * | 1992-04-22 | 1993-10-19 | Micron Technology, Inc. | Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer |
| KR960006718B1 (en) * | 1992-12-31 | 1996-05-22 | 현대전자산업주식회사 | Memory capacitor in semiconductor device and the method for fabricating the same |
| KR960011652B1 (en) * | 1993-04-14 | 1996-08-24 | 현대전자산업 주식회사 | Stack Capacitor and Manufacturing Method Thereof |
| JP3172321B2 (en) * | 1993-04-26 | 2001-06-04 | 三洋電機株式会社 | Method for manufacturing semiconductor memory device |
| US5543346A (en) * | 1993-08-31 | 1996-08-06 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating a dynamic random access memory stacked capacitor |
| US5449635A (en) * | 1993-12-28 | 1995-09-12 | Goldstar Electron Co., Ltd. | Method of fabricating a semiconductor memory |
-
1997
- 1997-01-30 GB GB9701924A patent/GB2321772A/en not_active Withdrawn
- 1997-03-28 JP JP9077766A patent/JPH1079489A/en active Pending
- 1997-04-25 FR FR9705120A patent/FR2752485B1/en not_active Expired - Fee Related
- 1997-05-14 DE DE19720204A patent/DE19720204A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2321772A (en) | 1998-08-05 |
| JPH1079489A (en) | 1998-03-24 |
| FR2752485A1 (en) | 1998-02-20 |
| DE19720204A1 (en) | 1998-02-19 |
| GB9701924D0 (en) | 1997-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |