[go: up one dir, main page]

FR2736205B1 - Dispositif detecteur a semiconducteur et son procede de formation - Google Patents

Dispositif detecteur a semiconducteur et son procede de formation

Info

Publication number
FR2736205B1
FR2736205B1 FR9507903A FR9507903A FR2736205B1 FR 2736205 B1 FR2736205 B1 FR 2736205B1 FR 9507903 A FR9507903 A FR 9507903A FR 9507903 A FR9507903 A FR 9507903A FR 2736205 B1 FR2736205 B1 FR 2736205B1
Authority
FR
France
Prior art keywords
sensor device
forming method
semiconductor sensor
semiconductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9507903A
Other languages
English (en)
Other versions
FR2736205A1 (fr
Inventor
Lionel Lescouzeres
Jean Paul Guillemet
Andre Peyre-Lavigne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Priority to FR9507903A priority Critical patent/FR2736205B1/fr
Priority to EP96110163A priority patent/EP0751389B1/fr
Priority to DE69630488T priority patent/DE69630488T2/de
Priority to US08/669,013 priority patent/US5907765A/en
Priority to JP8186774A priority patent/JPH09119912A/ja
Publication of FR2736205A1 publication Critical patent/FR2736205A1/fr
Application granted granted Critical
Publication of FR2736205B1 publication Critical patent/FR2736205B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
  • Measuring Volume Flow (AREA)
FR9507903A 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation Expired - Lifetime FR2736205B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9507903A FR2736205B1 (fr) 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation
EP96110163A EP0751389B1 (fr) 1995-06-30 1996-06-24 Capteur semi-conducteur et son procédé de formation
DE69630488T DE69630488T2 (de) 1995-06-30 1996-06-24 Halbleitersensor und Methode zu dessen Herstellung
US08/669,013 US5907765A (en) 1995-06-30 1996-06-24 Method for forming a semiconductor sensor device
JP8186774A JPH09119912A (ja) 1995-06-30 1996-06-27 半導体センサ装置およびその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9507903A FR2736205B1 (fr) 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation

Publications (2)

Publication Number Publication Date
FR2736205A1 FR2736205A1 (fr) 1997-01-03
FR2736205B1 true FR2736205B1 (fr) 1997-09-19

Family

ID=9480570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9507903A Expired - Lifetime FR2736205B1 (fr) 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation

Country Status (5)

Country Link
US (1) US5907765A (fr)
EP (1) EP0751389B1 (fr)
JP (1) JPH09119912A (fr)
DE (1) DE69630488T2 (fr)
FR (1) FR2736205B1 (fr)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023091A (en) * 1995-11-30 2000-02-08 Motorola, Inc. Semiconductor heater and method for making
DE69731604D1 (de) * 1997-01-31 2004-12-23 St Microelectronics Srl Herstellungsverfahren für integrierte Halbleitervorrichtung mit einem chemoresistiven Gasmikrosensor
FR2772512B1 (fr) * 1997-12-16 2004-04-16 Commissariat Energie Atomique Microsysteme a element deformable sous l'effet d'un actionneur thermique
EP0947245B1 (fr) * 1998-02-05 2004-04-07 Motorola Semiconducteurs S.A. Procédé de fabrication de colloides contenant un métal et procédé de fabrication d'une couche sensible pour un dispositif capteur chimique
DE69831075D1 (de) * 1998-10-21 2005-09-08 St Microelectronics Srl Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten
KR20010037655A (ko) * 1999-10-19 2001-05-15 이진경 마이크로머시닝 기술에 의해 제조되는 저전력형 세라믹 가스센서 및 그 제조방법
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
AU2001261026A1 (en) * 2000-04-17 2001-10-30 The Penn State Research Foundation Deposited thin films and their use in separation and sarcrificial layer applications
FR2808919B1 (fr) * 2000-05-15 2002-07-19 Memscap Microcomposant electronique du type capacite variable ou microswitch, ou procede de fabrication d'un tel composant
US6685823B2 (en) * 2000-10-16 2004-02-03 Uniroyal Chemical Company, Inc. C-nitrosoaniline compounds and their blends as polymerization inhibitors
US6777244B2 (en) 2000-12-06 2004-08-17 Hrl Laboratories, Llc Compact sensor using microcavity structures
KR100449069B1 (ko) * 2001-09-12 2004-09-18 한국전자통신연구원 미소전극, 미소전극 어레이 및 미소전극 제조 방법
WO2003050854A2 (fr) * 2001-12-12 2003-06-19 The Pennsylvania State University Gabarits de reacteur chimique: fabrication de couche sacrificielle et utilisation de gabarits
AU2003205104A1 (en) * 2002-01-11 2003-07-30 The Pennsylvania State University Method of forming a removable support with a sacrificial layers and of transferring devices
DE10219254B4 (de) * 2002-04-30 2011-08-11 Robert Bosch GmbH, 70469 Mikromechanisches Bauelement mit einem Isolationsbereich und entsprechendes Herstellungsverfahren
US7296458B2 (en) * 2002-10-17 2007-11-20 Advanced Technology Materials, Inc Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same
US7080545B2 (en) * 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
US20040163445A1 (en) * 2002-10-17 2004-08-26 Dimeo Frank Apparatus and process for sensing fluoro species in semiconductor processing systems
EP1602124B1 (fr) * 2003-02-25 2013-09-04 IC Mechanics, Inc. Montage micro-usine pourvu d'une calotte multicouche definissant une cavite
US20060211253A1 (en) * 2005-03-16 2006-09-21 Ing-Shin Chen Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
KR100812996B1 (ko) * 2006-12-07 2008-03-13 한국전자통신연구원 마이크로 가스 센서 및 그 제조방법
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
ES2923759T3 (es) 2006-12-14 2022-09-30 Life Technologies Corp Aparato para medir analitos utilizando matrices de FET
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
CN106449632B (zh) 2010-06-30 2019-09-20 生命科技公司 阵列列积分器
TWI569025B (zh) 2010-06-30 2017-02-01 生命技術公司 用於測試離子感測場效電晶體（ｉｓｆｅｔ）陣列之裝置及方法
US8858782B2 (en) 2010-06-30 2014-10-14 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
CN103168341B (zh) 2010-07-03 2016-10-05 生命科技公司 具有轻度掺杂的排出装置的化学敏感的传感器
EP2617061B1 (fr) 2010-09-15 2021-06-30 Life Technologies Corporation Procédés et appareil de mesure d'analytes
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
EP2642289A1 (fr) 2012-03-20 2013-09-25 Sensirion AG Dispositif électronique portable
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9772317B2 (en) 2012-07-26 2017-09-26 Sensirion Ag Method for operating a portable electronic device
US8802568B2 (en) 2012-09-27 2014-08-12 Sensirion Ag Method for manufacturing chemical sensor with multiple sensor cells
US11371951B2 (en) 2012-09-27 2022-06-28 Sensirion Ag Gas sensor comprising a set of one or more sensor cells
US9080968B2 (en) * 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
WO2014149779A1 (fr) 2013-03-15 2014-09-25 Life Technologies Corporation Dispositif chimique à élément conducteur mince
WO2014149780A1 (fr) 2013-03-15 2014-09-25 Life Technologies Corporation Capteur chimique à surfaces de capteur cohérentes
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US9863901B2 (en) * 2013-12-06 2018-01-09 Robert Bosch Gmbh Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
CN107250784B (zh) 2014-12-18 2020-10-23 生命科技公司 具有发送器配置的高数据率集成电路
DE102015210659A1 (de) * 2015-06-11 2016-12-15 Robert Bosch Gmbh Verfahren zur Herstellung eines Festkörperelekrolyt-Sensorelements
WO2018035468A1 (fr) 2016-08-18 2018-02-22 Carrier Corporation Capteur isolé et procédé d'isolement de capteur

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1216330A (fr) * 1983-02-07 1987-01-06 Junji Manaka Detecteur faible puissance pour gaz
JPH01109250A (ja) * 1987-10-22 1989-04-26 Toshiba Corp ガスセンサ
GB2198610B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of producing a diaphragm on a substrate
GB2198611B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of forming a sealed diaphragm on a substrate
US4967589A (en) * 1987-12-23 1990-11-06 Ricoh Company, Ltd. Gas detecting device
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
JP2847970B2 (ja) * 1989-12-28 1999-01-20 富士電機株式会社 ガスセンサおよびその製造方法
JPH0630283A (ja) * 1992-07-08 1994-02-04 Nec Eng Ltd ファクシミリ装置
US5345213A (en) * 1992-10-26 1994-09-06 The United States Of America, As Represented By The Secretary Of Commerce Temperature-controlled, micromachined arrays for chemical sensor fabrication and operation
DE4236133C1 (de) * 1992-10-26 1994-03-10 Siemens Ag Sensoranordnung zur Erfassung von Fingerabdrücken und Verfahren zu deren Herstellung
US5316619A (en) * 1993-02-05 1994-05-31 Ford Motor Company Capacitive surface micromachine absolute pressure sensor and method for processing
DE4331798B4 (de) * 1993-09-18 2004-08-26 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Bauelementen
US5489556A (en) * 1994-06-29 1996-02-06 United Microelectronics Corp. Method for the fabrication of electrostatic microswitches

Also Published As

Publication number Publication date
DE69630488D1 (de) 2003-12-04
JPH09119912A (ja) 1997-05-06
EP0751389B1 (fr) 2003-10-29
US5907765A (en) 1999-05-25
FR2736205A1 (fr) 1997-01-03
EP0751389A1 (fr) 1997-01-02
DE69630488T2 (de) 2004-05-13

Similar Documents

Publication Publication Date Title
FR2736205B1 (fr) Dispositif detecteur a semiconducteur et son procede de formation
FR2764113B1 (fr) Dispositif capteur et son procede de fabrication
FR2732467B1 (fr) Capteur d'acceleration et procede de fabrication d'un tel capteur
EP0726604A3 (fr) Dispositif de type MIS et méthode de fabrication
DE69605630D1 (de) Selbstversorgende Vorrichtung
EP1134704A4 (fr) Procede de distinction original/contrefacon, objet de distinction original/contrefacon et dispositif de distinction original/contrefacon
FR2736474B1 (fr) Procede pour fabriquer un dispositif laser a semi-conducteur et dispositif laser a semi-conducteur
DE69633737D1 (de) Vorrichtung mit halbleiter
FR2745637B1 (fr) Dispositif capteur chimique a semiconducteur et procede de formation d'un thermocouple pour ce dispositif
EP0862222A4 (fr) Dispositif a semi-conducteurs et procede de fabrication
FR2724489B1 (fr) Dispositif a semiconducteur et son procede de fabrication
DE69614583D1 (de) Lichtempfängliche Vorrichtung
KR970004015A (ko) 반도체장치 및 그의 제조방법
FR2736979B1 (fr) Dispositif et procede detecteur dynamometrique pour roulements et paliers
FR2736883B1 (fr) Procede de blocage du demarrage et dispositif de blocage du demarrage
FR2746183B1 (fr) Dispositif capteur chimique a semiconducteur et procede de formation d'un dispositif capteur chimique a semiconducteur
FR2699287B1 (fr) Procédé et dispositif de cartographie magnétique.
EP0755070A3 (fr) Dispositif semi-conducteur et procédé de fabrication
FR2746368B1 (fr) Procede et dispositif de conditionnement de gants
FR2743931B1 (fr) Procede et dispositif de fabrication d'un cable
FR2694657B1 (fr) Dispositif a semiconducteurs et procede de fabrication.
EP1030375A4 (fr) Dispositif a semiconducteur et son procede de fabrication
DE69625007D1 (de) Halbleiterelement-Herstellungsverfahren
FR2735641B1 (fr) Procede de commande de communication et dispositif de communication
FR2733067B1 (fr) Dispositif et procede de commande de verrouillage

Legal Events

Date Code Title Description
TP Transmission of property