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FR2674683B1 - Transistor a effet de champ ayant une couche de source d'electrons et une couche semiconductrice supplementaire portant les electrodes. - Google Patents

Transistor a effet de champ ayant une couche de source d'electrons et une couche semiconductrice supplementaire portant les electrodes.

Info

Publication number
FR2674683B1
FR2674683B1 FR9203602A FR9203602A FR2674683B1 FR 2674683 B1 FR2674683 B1 FR 2674683B1 FR 9203602 A FR9203602 A FR 9203602A FR 9203602 A FR9203602 A FR 9203602A FR 2674683 B1 FR2674683 B1 FR 2674683B1
Authority
FR
France
Prior art keywords
electrodes
field effect
effect transistor
electron source
additional semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9203602A
Other languages
English (en)
Other versions
FR2674683A1 (fr
Inventor
Sonoda Takuji
Sakamoto Shinichi
Kasai Nobuyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2674683A1 publication Critical patent/FR2674683A1/fr
Application granted granted Critical
Publication of FR2674683B1 publication Critical patent/FR2674683B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
FR9203602A 1991-03-26 1992-03-25 Transistor a effet de champ ayant une couche de source d'electrons et une couche semiconductrice supplementaire portant les electrodes. Expired - Lifetime FR2674683B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3060636A JP2924239B2 (ja) 1991-03-26 1991-03-26 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
FR2674683A1 FR2674683A1 (fr) 1992-10-02
FR2674683B1 true FR2674683B1 (fr) 1997-08-01

Family

ID=13148003

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9203602A Expired - Lifetime FR2674683B1 (fr) 1991-03-26 1992-03-25 Transistor a effet de champ ayant une couche de source d'electrons et une couche semiconductrice supplementaire portant les electrodes.

Country Status (3)

Country Link
US (1) US5250822A (fr)
JP (1) JP2924239B2 (fr)
FR (1) FR2674683B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661556B2 (ja) * 1994-07-25 1997-10-08 日本電気株式会社 電界効果型半導体装置
US5786244A (en) * 1994-09-30 1998-07-28 National Science Council Method for making GaAs-InGaAs high electron mobility transistor
JPH08250520A (ja) * 1995-03-14 1996-09-27 Mitsubishi Electric Corp 電界効果型半導体装置
JP3601649B2 (ja) * 1996-12-25 2004-12-15 株式会社村田製作所 電界効果トランジスタ
US6262444B1 (en) * 1997-04-23 2001-07-17 Nec Corporation Field-effect semiconductor device with a recess profile
JP3534624B2 (ja) 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
JP3416532B2 (ja) 1998-06-15 2003-06-16 富士通カンタムデバイス株式会社 化合物半導体装置及びその製造方法
JP5653607B2 (ja) * 2008-11-26 2015-01-14 古河電気工業株式会社 ＧａＮ系電界効果トランジスタおよびその製造方法
KR101626463B1 (ko) * 2010-02-26 2016-06-02 삼성전자주식회사 고 전자 이동도 트랜지스터의 제조방법
WO2012014675A1 (fr) * 2010-07-29 2012-02-02 日本碍子株式会社 Élément semi-conducteur, élément de transistor à grande mobilité d'électrons, et procédé de fabrication d'élément semi-conducteur
WO2014147706A1 (fr) * 2013-03-18 2014-09-25 富士通株式会社 Dispositif à semi-conducteur
KR102065113B1 (ko) * 2013-05-01 2020-01-10 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조 방법
KR102100928B1 (ko) * 2013-10-17 2020-05-15 삼성전자주식회사 고전자 이동도 트랜지스터
US10686091B2 (en) * 2016-02-12 2020-06-16 Lg Innotek Co., Ltd. Semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124769A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体装置
JPH0732247B2 (ja) * 1983-10-19 1995-04-10 富士通株式会社 半導体装置
JPS60193382A (ja) * 1984-03-15 1985-10-01 Nec Corp 半導体装置
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
JPS61171170A (ja) * 1985-01-25 1986-08-01 Hitachi Ltd 半導体装置
US4689115A (en) * 1985-04-26 1987-08-25 American Telephone And Telegraph Company, At&T Bell Laboratories Gaseous etching process
JPS62266874A (ja) * 1986-05-15 1987-11-19 Fujitsu Ltd 半導体装置
JPH0789586B2 (ja) * 1986-09-01 1995-09-27 株式会社日立製作所 半導体装置
US4827320A (en) * 1986-09-19 1989-05-02 University Of Illinois Semiconductor device with strained InGaAs layer
JPS63155772A (ja) * 1986-12-19 1988-06-28 Hitachi Ltd 電界効果トランジスタ
JPH0714057B2 (ja) * 1986-12-25 1995-02-15 松下電器産業株式会社 電界効果トランジスタ
JPS6449274A (en) * 1987-08-20 1989-02-23 Fujitsu Ltd Superhigh-speed semiconductor device
JPH088353B2 (ja) * 1988-01-21 1996-01-29 三菱電機株式会社 二次元ヘテロ接合素子
JP2677653B2 (ja) * 1989-02-03 1997-11-17 富士通株式会社 半導体装置
US5043777A (en) * 1989-04-03 1991-08-27 Westinghouse Electric Corp. Power FETS with improved high voltage performance
JPH0355851A (ja) * 1989-07-25 1991-03-11 Nippon Mining Co Ltd 半導体装置
US5038187A (en) * 1989-12-01 1991-08-06 Hewlett-Packard Company Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies
US5028968A (en) * 1990-01-02 1991-07-02 The Aerospace Corporation Radiation hard GaAs high electron mobility transistor
US5049951A (en) * 1990-12-20 1991-09-17 Motorola, Inc. Superlattice field effect transistor with monolayer confinement
US5140386A (en) * 1991-05-09 1992-08-18 Raytheon Company High electron mobility transistor

Also Published As

Publication number Publication date
US5250822A (en) 1993-10-05
JP2924239B2 (ja) 1999-07-26
JPH0645366A (ja) 1994-02-18
FR2674683A1 (fr) 1992-10-02

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