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FR2535530B1 - Structure planaire de transistors a effet de champ sur substrat isolant - Google Patents

Structure planaire de transistors a effet de champ sur substrat isolant

Info

Publication number
FR2535530B1
FR2535530B1 FR8218247A FR8218247A FR2535530B1 FR 2535530 B1 FR2535530 B1 FR 2535530B1 FR 8218247 A FR8218247 A FR 8218247A FR 8218247 A FR8218247 A FR 8218247A FR 2535530 B1 FR2535530 B1 FR 2535530B1
Authority
FR
France
Prior art keywords
field effect
insulating substrate
effect transistors
planar structure
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8218247A
Other languages
English (en)
Other versions
FR2535530A1 (fr
Inventor
Yvon Gris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EFCIS
Original Assignee
EFCIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EFCIS filed Critical EFCIS
Priority to FR8218247A priority Critical patent/FR2535530B1/fr
Publication of FR2535530A1 publication Critical patent/FR2535530A1/fr
Application granted granted Critical
Publication of FR2535530B1 publication Critical patent/FR2535530B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6758Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759Silicon-on-sapphire [SOS] substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
FR8218247A 1982-10-29 1982-10-29 Structure planaire de transistors a effet de champ sur substrat isolant Expired FR2535530B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8218247A FR2535530B1 (fr) 1982-10-29 1982-10-29 Structure planaire de transistors a effet de champ sur substrat isolant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8218247A FR2535530B1 (fr) 1982-10-29 1982-10-29 Structure planaire de transistors a effet de champ sur substrat isolant

Publications (2)

Publication Number Publication Date
FR2535530A1 FR2535530A1 (fr) 1984-05-04
FR2535530B1 true FR2535530B1 (fr) 1986-01-17

Family

ID=9278777

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8218247A Expired FR2535530B1 (fr) 1982-10-29 1982-10-29 Structure planaire de transistors a effet de champ sur substrat isolant

Country Status (1)

Country Link
FR (1) FR2535530B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262299A (en) * 1979-01-29 1981-04-14 Rca Corporation Semiconductor-on-insulator device and method for its manufacture
JPS5773969A (en) * 1980-10-28 1982-05-08 Toshiba Corp Manufacture of semiconductor device
JPS5799777A (en) * 1980-12-12 1982-06-21 Toshiba Corp Metal oxide semiconductor type semiconductor device

Also Published As

Publication number Publication date
FR2535530A1 (fr) 1984-05-04

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Legal Events

Date Code Title Description
ST Notification of lapse