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FR2404895A1 - Cellule de memoire programmable a diodes semiconductrices - Google Patents

Cellule de memoire programmable a diodes semiconductrices

Info

Publication number
FR2404895A1
FR2404895A1 FR7729476A FR7729476A FR2404895A1 FR 2404895 A1 FR2404895 A1 FR 2404895A1 FR 7729476 A FR7729476 A FR 7729476A FR 7729476 A FR7729476 A FR 7729476A FR 2404895 A1 FR2404895 A1 FR 2404895A1
Authority
FR
France
Prior art keywords
memory cell
programmable memory
semiconductor diodes
programmable
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7729476A
Other languages
English (en)
Other versions
FR2404895B1 (fr
Inventor
Michel Moussie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7729476A priority Critical patent/FR2404895A1/fr
Priority to US05/938,470 priority patent/US4229757A/en
Priority to CA000311761A priority patent/CA1135855A/fr
Priority to DE2841230A priority patent/DE2841230C2/de
Priority to JP53118101A priority patent/JPS5811107B2/ja
Priority to GB7838322A priority patent/GB2005079B/en
Publication of FR2404895A1 publication Critical patent/FR2404895A1/fr
Application granted granted Critical
Publication of FR2404895B1 publication Critical patent/FR2404895B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

Cellule de mémoire morte à circuit intégré, électriquement programmable, constituée d'au moins deux diodes dos à dos. Une première diode est formée par une jonction plane 7 entre deux régions superposées 2, 6, la seconde diode est programmable et formée par une jonction latérale Il entre deux zones coplanaires 9, 10 d'une couche mince de semiconducteur isolée du corps par une couche isolante 8 percée d'une ouverture de contact 18. Application aux mémoires mortes programmables.
FR7729476A 1977-09-30 1977-09-30 Cellule de memoire programmable a diodes semiconductrices Granted FR2404895A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7729476A FR2404895A1 (fr) 1977-09-30 1977-09-30 Cellule de memoire programmable a diodes semiconductrices
US05/938,470 US4229757A (en) 1977-09-30 1978-08-31 Programmable memory cell having semiconductor diodes
CA000311761A CA1135855A (fr) 1977-09-30 1978-09-21 Cellule de memoire programmable a diodes semiconductrices
DE2841230A DE2841230C2 (de) 1977-09-30 1978-09-22 Programmierbare Speicherzelle mit Halbleiterdioden
JP53118101A JPS5811107B2 (ja) 1977-09-30 1978-09-27 半導体ダイオ−ドを有するプログラム可能メモリセル
GB7838322A GB2005079B (en) 1977-09-30 1978-09-27 Programmable read-only memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7729476A FR2404895A1 (fr) 1977-09-30 1977-09-30 Cellule de memoire programmable a diodes semiconductrices

Publications (2)

Publication Number Publication Date
FR2404895A1 true FR2404895A1 (fr) 1979-04-27
FR2404895B1 FR2404895B1 (fr) 1981-12-11

Family

ID=9195971

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7729476A Granted FR2404895A1 (fr) 1977-09-30 1977-09-30 Cellule de memoire programmable a diodes semiconductrices

Country Status (6)

Country Link
US (1) US4229757A (fr)
JP (1) JPS5811107B2 (fr)
CA (1) CA1135855A (fr)
DE (1) DE2841230C2 (fr)
FR (1) FR2404895A1 (fr)
GB (1) GB2005079B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1135854A (fr) * 1977-09-30 1982-11-16 Michel Moussie Cellule de memoire morte programmable
JPS5499540U (fr) * 1977-12-26 1979-07-13
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
EP0041770A3 (fr) * 1980-05-23 1984-07-11 Texas Instruments Incorporated Elément de mémoire morte programmable et procédé pour sa fabrication
FR2490860B1 (fr) * 1980-09-24 1986-11-28 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
DE3150164A1 (de) * 1980-12-29 1982-08-12 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Programmierbarer festwertspeicher und speicherzelle zur anwendung in einem derartigen speicher
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
GB2118776B (en) * 1982-04-12 1985-11-06 Philips Nv Programmable read-only memory and associated method of manufacture
US4727409A (en) * 1982-04-12 1988-02-23 Signetics Corporation Programmable read-only memory formed with opposing PN diodes
US4694566A (en) * 1982-04-12 1987-09-22 Signetics Corporation Method for manufacturing programmable read-only memory containing cells formed with opposing diodes
JPS58193158A (ja) * 1982-05-06 1983-11-10 Sharp Corp インク供給装置
US4712125A (en) * 1982-08-06 1987-12-08 International Business Machines Corporation Structure for contacting a narrow width PN junction region
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
JPS63177306U (fr) * 1987-04-30 1988-11-17
US5486776A (en) * 1994-09-29 1996-01-23 Xilinx, Inc. Antifuse-based programmable logic circuit
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6631085B2 (en) * 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377513A (en) * 1966-05-02 1968-04-09 North American Rockwell Integrated circuit diode matrix
US3634929A (en) * 1968-11-02 1972-01-18 Tokyo Shibaura Electric Co Method of manufacturing semiconductor integrated circuits
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device

Also Published As

Publication number Publication date
GB2005079B (en) 1982-02-24
JPS5458382A (en) 1979-05-11
DE2841230C2 (de) 1983-11-17
JPS5811107B2 (ja) 1983-03-01
GB2005079A (en) 1979-04-11
CA1135855A (fr) 1982-11-16
DE2841230A1 (de) 1979-04-12
FR2404895B1 (fr) 1981-12-11
US4229757A (en) 1980-10-21

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Legal Events

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CD Change of name or company name
ST Notification of lapse