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FR2383522A1 - Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs - Google Patents

Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs

Info

Publication number
FR2383522A1
FR2383522A1 FR7806301A FR7806301A FR2383522A1 FR 2383522 A1 FR2383522 A1 FR 2383522A1 FR 7806301 A FR7806301 A FR 7806301A FR 7806301 A FR7806301 A FR 7806301A FR 2383522 A1 FR2383522 A1 FR 2383522A1
Authority
FR
France
Prior art keywords
semiconductor devices
series
forming metallized
metallized zones
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7806301A
Other languages
English (en)
Other versions
FR2383522B1 (fr
Inventor
Giulio Iannuzzi
Carlo Cognetti De Martis
Vittorio Del Bo
Luciano Gandolfi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2383522A1 publication Critical patent/FR2383522A1/fr
Application granted granted Critical
Publication of FR2383522B1 publication Critical patent/FR2383522B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de formation de zones métallisées sur une série de dispositifs à semi-conducteurs. Il est caractérisé par le fait qu'il comporte la préparation au soudage à bas point de fusion de l'aluminium déposé sur la partie avant de la plaquette au moyen de trois dépôts successifs sous vide et la préparation de la partie arrière par cinq dépôts successifs de métaux sous vide. L'invention s'applique à la fabrication des dispositifs à semi-conducteurs.
FR7806301A 1977-03-08 1978-03-06 Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs Granted FR2383522A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21021/77A IT1075077B (it) 1977-03-08 1977-03-08 Metodo pr realizzare contatti su semiconduttori

Publications (2)

Publication Number Publication Date
FR2383522A1 true FR2383522A1 (fr) 1978-10-06
FR2383522B1 FR2383522B1 (fr) 1983-01-28

Family

ID=11175492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7806301A Granted FR2383522A1 (fr) 1977-03-08 1978-03-06 Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs

Country Status (5)

Country Link
DE (1) DE2809863A1 (fr)
FR (1) FR2383522A1 (fr)
GB (1) GB1563773A (fr)
IT (1) IT1075077B (fr)
SE (1) SE437589B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2591802A1 (fr) * 1985-12-16 1987-06-19 Nat Semiconductor Corp Protection contre l'oxydation de pastilles de connexion en cuivre au moyen de palladium

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
DE3823347A1 (de) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
JPH07101736B2 (ja) * 1990-06-28 1995-11-01 日本電装株式会社 半導体装置およびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1569479A (fr) * 1967-07-13 1969-05-30
FR2097133A1 (fr) * 1970-07-02 1972-03-03 Siemens Ag
US3663184A (en) * 1970-01-23 1972-05-16 Fairchild Camera Instr Co Solder bump metallization system using a titanium-nickel barrier layer
GB1288564A (fr) * 1969-01-24 1972-09-13
GB1360213A (en) * 1971-12-16 1974-07-17 Lucas Industries Ltd Method of mounting a semi-conductor chip on a heat sink
DE2359640A1 (de) * 1973-11-30 1975-06-12 Licentia Gmbh Elektrischer anschlusskontakt an einen halbleiterkoerper

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1569479A (fr) * 1967-07-13 1969-05-30
GB1288564A (fr) * 1969-01-24 1972-09-13
US3663184A (en) * 1970-01-23 1972-05-16 Fairchild Camera Instr Co Solder bump metallization system using a titanium-nickel barrier layer
FR2097133A1 (fr) * 1970-07-02 1972-03-03 Siemens Ag
GB1360213A (en) * 1971-12-16 1974-07-17 Lucas Industries Ltd Method of mounting a semi-conductor chip on a heat sink
DE2359640A1 (de) * 1973-11-30 1975-06-12 Licentia Gmbh Elektrischer anschlusskontakt an einen halbleiterkoerper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2591802A1 (fr) * 1985-12-16 1987-06-19 Nat Semiconductor Corp Protection contre l'oxydation de pastilles de connexion en cuivre au moyen de palladium

Also Published As

Publication number Publication date
IT1075077B (it) 1985-04-22
DE2809863A1 (de) 1978-09-14
GB1563773A (en) 1980-04-02
SE7802570L (sv) 1978-09-09
FR2383522B1 (fr) 1983-01-28
SE437589B (sv) 1985-03-04

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