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FR2382769A1 - METHOD FOR MANUFACTURING HIGH DEFINITION POLYCRYSTALLINE SILICON LAYERS - Google Patents

METHOD FOR MANUFACTURING HIGH DEFINITION POLYCRYSTALLINE SILICON LAYERS

Info

Publication number
FR2382769A1
FR2382769A1 FR7817173A FR7817173A FR2382769A1 FR 2382769 A1 FR2382769 A1 FR 2382769A1 FR 7817173 A FR7817173 A FR 7817173A FR 7817173 A FR7817173 A FR 7817173A FR 2382769 A1 FR2382769 A1 FR 2382769A1
Authority
FR
France
Prior art keywords
polycrystalline silicon
high definition
silicon layers
manufacturing high
definition polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7817173A
Other languages
French (fr)
Other versions
FR2382769B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of FR2382769A1 publication Critical patent/FR2382769A1/en
Application granted granted Critical
Publication of FR2382769B1 publication Critical patent/FR2382769B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
  • Non-Volatile Memory (AREA)

Abstract

La présente invention concerne un procédé de fabrication de dispositif à semiconducteur. Selon ce procédé, on prévoit en cours de fabrication, la formation de couches de silicium polycristallin de recouvrement qui sont disposées au-dessus de portions sélectionnées d'un substrat semiconducteur 12 et isolées du substrat ainsi que l'une de l'autre Application notamment à la fabrication de mémoires à accès aléatoireThe present invention relates to a method of manufacturing a semiconductor device. According to this method, during manufacture, provision is made for the formation of polycrystalline silicon covering layers which are arranged above selected portions of a semiconductor substrate 12 and isolated from the substrate as well as from one another Application in particular the manufacture of random access memories

FR7817173A 1977-01-26 1978-06-08 METHOD FOR MANUFACTURING HIGH DEFINITION POLYCRYSTALLINE SILICON LAYERS Granted FR2382769A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76239877A 1977-01-26 1977-01-26

Publications (2)

Publication Number Publication Date
FR2382769A1 true FR2382769A1 (en) 1978-09-29
FR2382769B1 FR2382769B1 (en) 1983-06-03

Family

ID=25064929

Family Applications (5)

Application Number Title Priority Date Filing Date
FR7802068A Granted FR2382768A1 (en) 1977-01-26 1978-01-25 METHOD FOR PREPARING A SUBSTRATE SURFACE OF AN ISOPLANAR SEMICONDUCTOR DEVICE
FR7817175A Granted FR2382770A1 (en) 1977-01-26 1978-06-08 PROCESS FOR FORMING VERY SMALL CONTACT OPENINGS IN AN INTEGRATED CIRCUIT DEVICE
FR7817173A Granted FR2382769A1 (en) 1977-01-26 1978-06-08 METHOD FOR MANUFACTURING HIGH DEFINITION POLYCRYSTALLINE SILICON LAYERS
FR7817176A Granted FR2382745A1 (en) 1977-01-26 1978-06-08 MEMORY CELL
FR7817174A Granted FR2382767A1 (en) 1977-01-26 1978-06-08 SEMICONDUCTOR DEVICE MANUFACTURING PROCESS

Family Applications Before (2)

Application Number Title Priority Date Filing Date
FR7802068A Granted FR2382768A1 (en) 1977-01-26 1978-01-25 METHOD FOR PREPARING A SUBSTRATE SURFACE OF AN ISOPLANAR SEMICONDUCTOR DEVICE
FR7817175A Granted FR2382770A1 (en) 1977-01-26 1978-06-08 PROCESS FOR FORMING VERY SMALL CONTACT OPENINGS IN AN INTEGRATED CIRCUIT DEVICE

Family Applications After (2)

Application Number Title Priority Date Filing Date
FR7817176A Granted FR2382745A1 (en) 1977-01-26 1978-06-08 MEMORY CELL
FR7817174A Granted FR2382767A1 (en) 1977-01-26 1978-06-08 SEMICONDUCTOR DEVICE MANUFACTURING PROCESS

Country Status (5)

Country Link
JP (10) JPS5394190A (en)
DE (1) DE2802048A1 (en)
FR (5) FR2382768A1 (en)
GB (5) GB1595543A (en)
IT (1) IT1089299B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124283A1 (en) * 1980-06-30 1982-06-16 Hitachi, Ltd., Tokyo SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089299B (en) * 1977-01-26 1985-06-18 Mostek Corp PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE
GB2290167B (en) * 1994-06-08 1999-01-20 Hyundai Electronics Ind Method for fabricating a semiconductor device
US9954176B1 (en) 2016-10-06 2018-04-24 International Business Machines Corporation Dielectric treatments for carbon nanotube devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3825997A (en) * 1969-10-02 1974-07-30 Sony Corp Method for making semiconductor device

Family Cites Families (33)

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GB1053069A (en) * 1963-06-28
GB1175392A (en) * 1966-09-14 1969-12-23 Hitachi Ltd Method of Treating Protective Coatings for Semiconductor Devices
US3590477A (en) 1968-12-19 1971-07-06 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
GB1292060A (en) * 1969-04-15 1972-10-11 Tokyo Shibaura Electric Co A method of manufacturing a semiconductor device
DE2040180B2 (en) 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) METHOD FOR PREVENTING MECHANICAL BREAKAGE OF A THIN ELECTRICALLY CONDUCTIVE LAYER COVERING THE SURFACE OF A SEMICONDUCTOR BODY
NL7109327A (en) * 1970-07-10 1972-01-12
US3811974A (en) * 1971-07-19 1974-05-21 North American Rockwell Silicon nitride-silicon oxide etchant
JPS5112507B2 (en) 1971-10-22 1976-04-20
JPS5139835B2 (en) * 1971-12-27 1976-10-29
DE2218035A1 (en) * 1972-04-14 1973-10-31 Vepa Ag METHOD AND DEVICE FOR CONTINUOUS FIXING AND SHRINKING OF SYNTHESIS FIBERS
DE2320195A1 (en) 1972-04-24 1973-12-13 Standard Microsyst Smc STORAGE FIELD EFFECT TRANSISTOR WITH SILICON BASE MANUFACTURED BY ION IMPLANTATION
US3810795A (en) * 1972-06-30 1974-05-14 Ibm Method for making self-aligning structure for charge-coupled and bucket brigade devices
JPS5910073B2 (en) * 1972-10-27 1984-03-06 株式会社日立製作所 Method for manufacturing silicon gate MOS type semiconductor device
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
JPS50123274A (en) * 1974-03-15 1975-09-27
JPS5912495B2 (en) 1974-10-01 1984-03-23 カブシキガイシヤ ニツポンジドウシヤブヒンソウゴウケンキユウシヨ Collision detection device
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS51118393A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Semicondector unit
JPS51118392A (en) 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manuforcturing process for semiconductor unit
US4002511A (en) * 1975-04-16 1977-01-11 Ibm Corporation Method for forming masks comprising silicon nitride and novel mask structures produced thereby
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
JPS51139263A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of selective oxidation of silicon substrate
NL7506594A (en) * 1975-06-04 1976-12-07 Philips Nv PROCEDURE FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED USING THE PROCESS.
IT1061530B (en) * 1975-06-12 1983-04-30 Ncr Co METHOD FOR THE FORMATION OF ELECTRICAL CONNECTIONS IN SELECTED REGIONS OF A SURFACE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
DE2532594B2 (en) * 1975-07-21 1980-05-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Semiconductor memory
GB1540450A (en) 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
JPS6034270B2 (en) * 1976-01-12 1985-08-07 テキサス・インスツルメンツ・インコ−ポレイテツド Semiconductor memory device and its manufacturing method
US4240092A (en) 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
IT1089299B (en) * 1977-01-26 1985-06-18 Mostek Corp PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE
FR2584786B1 (en) * 1985-07-15 1989-10-27 Valeo ASSEMBLY OF THE RELEASE STOPPER AND RELEASE STOPPER SPECIFIC TO SUCH AN ASSEMBLY

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3825997A (en) * 1969-10-02 1974-07-30 Sony Corp Method for making semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *
EXBK/73 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124283A1 (en) * 1980-06-30 1982-06-16 Hitachi, Ltd., Tokyo SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF

Also Published As

Publication number Publication date
FR2382768A1 (en) 1978-09-29
GB1595545A (en) 1981-08-12
GB1595547A (en) 1981-08-12
GB1595548A (en) 1981-08-12
JPH098299A (en) 1997-01-10
JPH0918003A (en) 1997-01-17
FR2382745A1 (en) 1978-09-29
JPS62290147A (en) 1987-12-17
GB1595543A (en) 1981-08-12
FR2382769B1 (en) 1983-06-03
DE2802048A1 (en) 1978-07-27
FR2382770A1 (en) 1978-09-29
FR2382770B1 (en) 1983-06-03
JPS5760852A (en) 1982-04-13
JPS5394190A (en) 1978-08-17
FR2382768B1 (en) 1983-06-10
JPS62290181A (en) 1987-12-17
JPS62290180A (en) 1987-12-17
DE2802048C2 (en) 1993-02-11
GB1595546A (en) 1981-08-12
JPH0917799A (en) 1997-01-17
FR2382745B1 (en) 1983-06-03
IT1089299B (en) 1985-06-18
JPH04107840U (en) 1992-09-17
JP2720911B2 (en) 1998-03-04
FR2382767A1 (en) 1978-09-29
FR2382767B1 (en) 1983-06-03
JPS62290152A (en) 1987-12-17
JPH0362300B2 (en) 1991-09-25

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