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FR2381388A1 - PACKAGING FOR HIGH POWER SEMICONDUCTOR DEVICES - Google Patents

PACKAGING FOR HIGH POWER SEMICONDUCTOR DEVICES

Info

Publication number
FR2381388A1
FR2381388A1 FR7804380A FR7804380A FR2381388A1 FR 2381388 A1 FR2381388 A1 FR 2381388A1 FR 7804380 A FR7804380 A FR 7804380A FR 7804380 A FR7804380 A FR 7804380A FR 2381388 A1 FR2381388 A1 FR 2381388A1
Authority
FR
France
Prior art keywords
packaging
metal base
power semiconductor
wafers
ceramic plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7804380A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2381388A1 publication Critical patent/FR2381388A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

a. Empaquetage de transistors de puissance. b. Les transistors sont constitués par plusieurs petites plaquettes isolées de la base métallique de l'empaquetage en plaçant individuellement ces plaquettes semi-conductrices sur des plaquettes fines en céramique. L'embase métallique est munie de cavités individuelles afin d'assurer la mise en place des plaquettes en céramique et de réduire en même temps l'épaisseur de la base métallique située sous les plaquettes en céramique. En réduisant les epaisseurs des plaquettes en céramique ainsi que celles de l'embase métallique, la résistance thermique de l'empaquetage est notablement réduite. c. Applications à la réalisation du dispositif semi-conducteur de puissance.at. Packaging of power transistors. b. Transistors are made up of several small wafers isolated from the metal base of the package by individually placing these semiconductor wafers on thin ceramic wafers. The metal base is provided with individual cavities to ensure the placement of the ceramic plates and at the same time to reduce the thickness of the metal base located under the ceramic plates. By reducing the thicknesses of the ceramic plates as well as those of the metal base, the thermal resistance of the packaging is significantly reduced. vs. Applications to the realization of the power semiconductor device.

FR7804380A 1977-02-17 1978-02-16 PACKAGING FOR HIGH POWER SEMICONDUCTOR DEVICES Withdrawn FR2381388A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76963777A 1977-02-17 1977-02-17

Publications (1)

Publication Number Publication Date
FR2381388A1 true FR2381388A1 (en) 1978-09-15

Family

ID=25086071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804380A Withdrawn FR2381388A1 (en) 1977-02-17 1978-02-16 PACKAGING FOR HIGH POWER SEMICONDUCTOR DEVICES

Country Status (5)

Country Link
JP (1) JPS53102674A (en)
DE (1) DE2806099A1 (en)
FR (1) FR2381388A1 (en)
GB (1) GB1599852A (en)
NL (1) NL7801658A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511193A1 (en) * 1981-08-07 1983-02-11 Thomson Csf Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp.
EP0139029A1 (en) * 1983-10-19 1985-05-02 Olin Corporation Improved semiconductor package
EP0144866A3 (en) * 1983-11-25 1985-09-04 Kabushiki Kaisha Toshiba Semiconductor device comprising a substrate
FR2563379A1 (en) * 1984-04-20 1985-10-25 Artus Assembly of semiconductor electronic devices mounted on a dissipator
US4570337A (en) * 1982-04-19 1986-02-18 Olin Corporation Method of assembling a chip carrier
US4853491A (en) * 1984-10-03 1989-08-01 Olin Corporation Chip carrier
US4862323A (en) * 1984-04-12 1989-08-29 Olin Corporation Chip carrier
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
EP0372228A1 (en) * 1988-11-09 1990-06-13 Semikron Elektronik Gmbh Semiconductor element comprising a carrier
EP0368133A3 (en) * 1988-11-05 1990-11-22 Semikron Elektronik Gmbh Support body for the electrically insulated arrangement of components
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
US10700023B2 (en) 2016-05-18 2020-06-30 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US11367674B2 (en) 2016-08-10 2022-06-21 Macom Technology Solutions Holdings, Inc. High power transistors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899838U (en) * 1981-12-28 1983-07-07 富士通株式会社 semiconductor equipment
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
US5917236A (en) * 1995-12-08 1999-06-29 Hewlett-Packard Company Packaging system for field effects transistors
DE102006011995B3 (en) * 2006-03-16 2007-11-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module, has base plate connected with substrate in material-coherent manner, and contact layer of substrate divided into segments for providing material-coherent connection with base plate
US8237260B2 (en) 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728589A (en) * 1971-04-16 1973-04-17 Rca Corp Semiconductor assembly
FR2220879A1 (en) * 1973-03-10 1974-10-04 Tokyo Shibaura Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728589A (en) * 1971-04-16 1973-04-17 Rca Corp Semiconductor assembly
FR2220879A1 (en) * 1973-03-10 1974-10-04 Tokyo Shibaura Electric Co

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511193A1 (en) * 1981-08-07 1983-02-11 Thomson Csf Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp.
US4570337A (en) * 1982-04-19 1986-02-18 Olin Corporation Method of assembling a chip carrier
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
EP0139029A1 (en) * 1983-10-19 1985-05-02 Olin Corporation Improved semiconductor package
EP0144866A3 (en) * 1983-11-25 1985-09-04 Kabushiki Kaisha Toshiba Semiconductor device comprising a substrate
US4862323A (en) * 1984-04-12 1989-08-29 Olin Corporation Chip carrier
FR2563379A1 (en) * 1984-04-20 1985-10-25 Artus Assembly of semiconductor electronic devices mounted on a dissipator
US4853491A (en) * 1984-10-03 1989-08-01 Olin Corporation Chip carrier
EP0368133A3 (en) * 1988-11-05 1990-11-22 Semikron Elektronik Gmbh Support body for the electrically insulated arrangement of components
EP0372228A1 (en) * 1988-11-09 1990-06-13 Semikron Elektronik Gmbh Semiconductor element comprising a carrier
US10700023B2 (en) 2016-05-18 2020-06-30 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US11367674B2 (en) 2016-08-10 2022-06-21 Macom Technology Solutions Holdings, Inc. High power transistors
US11862536B2 (en) 2016-08-10 2024-01-02 Macom Technology Solutions Holdings, Inc. High power transistors

Also Published As

Publication number Publication date
DE2806099A1 (en) 1978-08-24
GB1599852A (en) 1981-10-07
NL7801658A (en) 1978-08-21
JPS6128219B2 (en) 1986-06-28
JPS53102674A (en) 1978-09-07

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Legal Events

Date Code Title Description
ST Notification of lapse