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FR2372904A1 - Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application - Google Patents

Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application

Info

Publication number
FR2372904A1
FR2372904A1 FR7729874A FR7729874A FR2372904A1 FR 2372904 A1 FR2372904 A1 FR 2372904A1 FR 7729874 A FR7729874 A FR 7729874A FR 7729874 A FR7729874 A FR 7729874A FR 2372904 A1 FR2372904 A1 FR 2372904A1
Authority
FR
France
Prior art keywords
pickling
polysilicon
polycrystalline silicon
tetramethylammonium hydroxide
containing tetramethylammonium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7729874A
Other languages
English (en)
Other versions
FR2372904B1 (fr
Inventor
Ernest Bassous
Cheng-Yih Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2372904A1 publication Critical patent/FR2372904A1/fr
Application granted granted Critical
Publication of FR2372904B1 publication Critical patent/FR2372904B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Detergent Compositions (AREA)

Abstract

Composition de décapage du silicium polycristallin contenant de l'hydroxyde de tétraméthylammonium et procédé d'application. La solution de décapage du silicium polycristallin est constituée par une solution aqueuse de NR4 OH, où R est un groupement alkyle, ayant une concentration molaire comprise entre 0,0001 mole et la limite de solubilité du soluté. Cette solution améliorée de décapage du silicium polycristallin permet une meilleure commande du décapage, dégage moins de chaleur pendant la réaction de décapage, réalise des vitesses de décapage très différentes pour le silicium polycristallin, le bioxyde de silicium et le verre au silicate de phosphore, évite l'introduction d'ions métalliques alcalins et possède une durée de vie plus longue et une plus grande gamme de concentration de composants.
FR7729874A 1976-11-19 1977-09-28 Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application Granted FR2372904A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74336276A 1976-11-19 1976-11-19

Publications (2)

Publication Number Publication Date
FR2372904A1 true FR2372904A1 (fr) 1978-06-30
FR2372904B1 FR2372904B1 (fr) 1982-07-23

Family

ID=24988491

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7729874A Granted FR2372904A1 (fr) 1976-11-19 1977-09-28 Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application

Country Status (5)

Country Link
US (1) US4113551A (fr)
JP (1) JPS5364637A (fr)
DE (1) DE2749636A1 (fr)
FR (1) FR2372904A1 (fr)
GB (1) GB1589619A (fr)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155866A (en) * 1978-04-24 1979-05-22 International Business Machines Corporation Method of controlling silicon wafer etching rates-utilizing a diazine catalyzed etchant
US4187140A (en) * 1978-10-11 1980-02-05 International Business Machines Corporation Method for etching silicon and a residue and oxidation resistant etchant therefor
DE3148037C2 (de) * 1981-12-04 1983-10-27 Maschinenfabrik Alfred Schmermund Gmbh & Co, 5820 Gevelsberg Vorrichtung zum intermittierenden Auftragen von Klebstoff
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
DE4003472C2 (de) * 1989-09-22 1999-08-12 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Siliziumplatten
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates
US5312781A (en) * 1991-11-12 1994-05-17 At&T Bell Laboratories Flash EEPROM fabrication process that uses a selective wet chemical etch
US5259888A (en) * 1992-02-03 1993-11-09 Sachem, Inc. Process for cleaning quartz and silicon surfaces
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5928969A (en) * 1996-01-22 1999-07-27 Micron Technology, Inc. Method for controlled selective polysilicon etching
JP3266041B2 (ja) * 1996-05-22 2002-03-18 株式会社島津製作所 部材接合法及びこの方法により製造した光学測定装置
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JP2001508239A (ja) * 1997-01-09 2001-06-19 アドバンスド ケミカル システムズ インターナショナル，インコーポレイテッド 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法
US6755989B2 (en) * 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
AU7040698A (en) 1997-07-10 1999-02-08 Merck Patent Gmbh Solutions for cleaning silicon semiconductors or silicon oxides
US6114248A (en) * 1998-01-15 2000-09-05 International Business Machines Corporation Process to reduce localized polish stop erosion
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings
US6221269B1 (en) 1999-01-19 2001-04-24 International Business Machines Corporation Method of etching molybdenum metal from substrates
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures
US6703320B1 (en) * 2002-01-04 2004-03-09 Taiwan Semiconductor Manufacturing Company Successful and easy method to remove polysilicon film
AU2003238773A1 (en) * 2002-06-07 2003-12-22 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
US7354863B2 (en) * 2004-03-19 2008-04-08 Micron Technology, Inc. Methods of selectively removing silicon
EP2224478B1 (fr) * 2007-12-20 2018-01-24 Asahi Kasei EMD Corporation Dispositif à semi-conducteurs et son procédé de fabrication
US20100178887A1 (en) 2009-01-13 2010-07-15 Millam Michael J Blast shield for use in wireless transmission system
KR20110105396A (ko) * 2009-01-14 2011-09-26 아반토르 퍼포먼스 머티리얼스 베.파우. 웨이퍼 표면 저항 및/또는 광전지 전력 밀도 수준을 증가시키기 위한 용액
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
MY160091A (en) 2010-06-09 2017-02-28 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
JP2012238849A (ja) 2011-04-21 2012-12-06 Rohm & Haas Electronic Materials Llc 改良された多結晶テクスチャ化組成物および方法
ES2541222T3 (es) 2011-08-09 2015-07-16 Basf Se Composiciones alcalinas acuosas y procedimiento de tratamiento de la superficie de sustratos de silicio
EP2782144B1 (fr) * 2013-03-19 2019-05-15 IMEC vzw Procédé de fabrication de cellules photovoltaïques à contact arrière interdigités à hétérojonction
CN113292999A (zh) * 2021-04-27 2021-08-24 昆明理工大学 铜催化刻蚀硅片刻蚀液用添加剂、刻蚀体系及刻蚀方法
US20250015259A1 (en) * 2021-12-02 2025-01-09 Wacker Chemie Ag Process for producing silicon-containing materials

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2142126A5 (fr) * 1971-06-14 1973-01-26 Le Pessot Gabriel
US3738881A (en) * 1971-09-22 1973-06-12 Bell Telephone Labor Inc Anisotropic etching of silicon and germanium
US3909335A (en) * 1974-05-22 1975-09-30 Gen Tire & Rubber Co Pneumatic tire transporter
GB1417170A (en) * 1972-12-22 1975-12-10 Mullard Ltd Methods of manufacturing semiconductor devices
DE2747414A1 (de) * 1976-10-21 1978-04-27 Tokyo Shibaura Electric Co Verfahren zum aetzen eines halbleitersubstrats

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361589A (en) * 1964-10-05 1968-01-02 Du Pont Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid
US3791848A (en) * 1972-05-19 1974-02-12 Western Electric Co A method of improving the adherence of a metal deposit to a polyimide surface
US3909325A (en) * 1974-06-28 1975-09-30 Motorola Inc Polycrystalline etch

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2142126A5 (fr) * 1971-06-14 1973-01-26 Le Pessot Gabriel
US3738881A (en) * 1971-09-22 1973-06-12 Bell Telephone Labor Inc Anisotropic etching of silicon and germanium
GB1417170A (en) * 1972-12-22 1975-12-10 Mullard Ltd Methods of manufacturing semiconductor devices
US3909335A (en) * 1974-05-22 1975-09-30 Gen Tire & Rubber Co Pneumatic tire transporter
DE2747414A1 (de) * 1976-10-21 1978-04-27 Tokyo Shibaura Electric Co Verfahren zum aetzen eines halbleitersubstrats

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/66 *

Also Published As

Publication number Publication date
JPS552474B2 (fr) 1980-01-21
JPS5364637A (en) 1978-06-09
FR2372904B1 (fr) 1982-07-23
DE2749636A1 (de) 1978-05-24
US4113551A (en) 1978-09-12
GB1589619A (en) 1981-05-13

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