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FR2356273A1 - Dispositif de protection d'entree pour semi-conducteurs mos - Google Patents

Dispositif de protection d'entree pour semi-conducteurs mos

Info

Publication number
FR2356273A1
FR2356273A1 FR7704460A FR7704460A FR2356273A1 FR 2356273 A1 FR2356273 A1 FR 2356273A1 FR 7704460 A FR7704460 A FR 7704460A FR 7704460 A FR7704460 A FR 7704460A FR 2356273 A1 FR2356273 A1 FR 2356273A1
Authority
FR
France
Prior art keywords
protection device
input protection
mos semiconductors
mos
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7704460A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Microsystems Holding Corp
Original Assignee
American Microsystems Holding Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Microsystems Holding Corp filed Critical American Microsystems Holding Corp
Publication of FR2356273A1 publication Critical patent/FR2356273A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Le dispositif 10 protège un transistor MOS 20 et comprend un transistor planar 32 à effet de champ, un moyen d'entrée 42 et une diode de protection 40, l'ensemble se présentant sous la forme d'un circuit intégré.
FR7704460A 1976-06-24 1977-02-16 Dispositif de protection d'entree pour semi-conducteurs mos Withdrawn FR2356273A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/699,527 US4057844A (en) 1976-06-24 1976-06-24 MOS input protection structure

Publications (1)

Publication Number Publication Date
FR2356273A1 true FR2356273A1 (fr) 1978-01-20

Family

ID=24809722

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7704460A Withdrawn FR2356273A1 (fr) 1976-06-24 1977-02-16 Dispositif de protection d'entree pour semi-conducteurs mos

Country Status (7)

Country Link
US (1) US4057844A (fr)
JP (1) JPS531478A (fr)
CA (1) CA1068008A (fr)
DE (1) DE2707843B2 (fr)
FR (1) FR2356273A1 (fr)
GB (1) GB1547543A (fr)
NL (1) NL7701011A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494040A1 (fr) * 1980-11-07 1982-05-14 Hitachi Ltd Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles
EP0090280A2 (fr) * 1982-03-25 1983-10-05 Nissan Motor Co., Ltd. Dispositif semi-conducteur intégré et son procédé de fabrication
DE4118441A1 (de) * 1991-06-05 1992-12-10 Siemens Ag Schaltungsanordnung zum schutz gegen ueberspannungen an eingaengen integrierter mos-schaltkreise

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
CA1175503A (fr) * 1981-07-17 1984-10-02 Andreas Demetriou Circuit d'excitation a cmos
US4679112A (en) * 1986-07-31 1987-07-07 General Motors Corporation Transistor protection circuit for automotive motor control applications
US4802054A (en) * 1987-03-13 1989-01-31 Motorola, Inc. Input protection for an integrated circuit
JPH01262654A (ja) * 1988-04-14 1989-10-19 Toshiba Corp 半導体装置
JPH01267985A (ja) * 1988-04-20 1989-10-25 Fuji Photo Film Co Ltd 発熱抵抗体の駆動回路
CA1314946C (fr) * 1989-02-01 1993-03-23 Colin Harris Protection d'entrees de tension analogiques de reference et de polarisation
US4930037A (en) * 1989-02-16 1990-05-29 Advaced Micro Devices, Inc. Input voltage protection system
US4950924A (en) * 1989-05-11 1990-08-21 Northern Telecom Limited High speed noise immune bipolar logic family
JP2589814B2 (ja) * 1989-07-19 1997-03-12 松下電器産業株式会社 クロック抽出装置およびトラッキング誤差信号採取装置
US5032742A (en) * 1989-07-28 1991-07-16 Dallas Semiconductor Corporation ESD circuit for input which exceeds power supplies in normal operation
EP0559243B1 (fr) * 1992-02-03 1997-04-02 Koninklijke Philips Electronics N.V. Circuit comparateur muni d'un atténuateur de signal d'entrée
US5319259A (en) * 1992-12-22 1994-06-07 National Semiconductor Corp. Low voltage input and output circuits with overvoltage protection
US6069493A (en) * 1997-11-28 2000-05-30 Motorola, Inc. Input circuit and method for protecting the input circuit
US6380027B2 (en) 1999-01-04 2002-04-30 International Business Machines Corporation Dual tox trench dram structures and process using V-groove
JP4346322B2 (ja) * 2003-02-07 2009-10-21 株式会社ルネサステクノロジ 半導体装置
US20110122539A1 (en) * 2009-11-20 2011-05-26 Nxp B.V. Method and structure for over-voltage tolerant cmos input-output circuits

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3408511A (en) * 1966-05-13 1968-10-29 Motorola Inc Chopper circuit capable of handling large bipolarity signals
JPS4632972B1 (fr) * 1967-11-13 1971-09-27
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494040A1 (fr) * 1980-11-07 1982-05-14 Hitachi Ltd Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles
EP0090280A2 (fr) * 1982-03-25 1983-10-05 Nissan Motor Co., Ltd. Dispositif semi-conducteur intégré et son procédé de fabrication
EP0090280A3 (fr) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Dispositif semi-conducteur intégré et son procédé de fabrication
DE4118441A1 (de) * 1991-06-05 1992-12-10 Siemens Ag Schaltungsanordnung zum schutz gegen ueberspannungen an eingaengen integrierter mos-schaltkreise

Also Published As

Publication number Publication date
CA1068008A (fr) 1979-12-11
DE2707843A1 (de) 1977-12-29
GB1547543A (en) 1979-06-20
DE2707843B2 (de) 1979-10-04
JPS531478A (en) 1978-01-09
US4057844A (en) 1977-11-08
NL7701011A (nl) 1977-12-28

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Legal Events

Date Code Title Description
ST Notification of lapse