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FR2346773A1 - Echantillonnage de puissance pour la realisation d'un triple-etat - Google Patents

Echantillonnage de puissance pour la realisation d'un triple-etat

Info

Publication number
FR2346773A1
FR2346773A1 FR7709227A FR7709227A FR2346773A1 FR 2346773 A1 FR2346773 A1 FR 2346773A1 FR 7709227 A FR7709227 A FR 7709227A FR 7709227 A FR7709227 A FR 7709227A FR 2346773 A1 FR2346773 A1 FR 2346773A1
Authority
FR
France
Prior art keywords
performance
power sampling
triple state
triple
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7709227A
Other languages
English (en)
Other versions
FR2346773B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull HN Information Systems Italia SpA
Bull HN Information Systems Inc
Original Assignee
Honeywell Information Systems Italia SpA
Honeywell Information Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Information Systems Italia SpA, Honeywell Information Systems Inc filed Critical Honeywell Information Systems Italia SpA
Publication of FR2346773A1 publication Critical patent/FR2346773A1/fr
Application granted granted Critical
Publication of FR2346773B1 publication Critical patent/FR2346773B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
FR7709227A 1976-03-30 1977-03-28 Echantillonnage de puissance pour la realisation d'un triple-etat Granted FR2346773A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/671,802 US4044330A (en) 1976-03-30 1976-03-30 Power strobing to achieve a tri state

Publications (2)

Publication Number Publication Date
FR2346773A1 true FR2346773A1 (fr) 1977-10-28
FR2346773B1 FR2346773B1 (fr) 1984-03-30

Family

ID=24695944

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7709227A Granted FR2346773A1 (fr) 1976-03-30 1977-03-28 Echantillonnage de puissance pour la realisation d'un triple-etat

Country Status (7)

Country Link
US (1) US4044330A (fr)
JP (1) JPS606038B2 (fr)
BE (1) BE852978A (fr)
CA (1) CA1087752A (fr)
DE (1) DE2711679C2 (fr)
FR (1) FR2346773A1 (fr)
GB (1) GB1523580A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1108732B (it) * 1978-05-05 1985-12-09 Honeywell Inf Systems Sistema di trasmissione bidirezionale di segnali interbloccati
JPS5856286B2 (ja) * 1980-12-25 1983-12-14 富士通株式会社 出力バッファ回路
US5367485A (en) * 1987-09-29 1994-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device including output latches for improved merging of output data
JPH03231320A (ja) * 1990-02-06 1991-10-15 Mitsubishi Electric Corp マイクロコンピュータシステム
EP0607668B1 (fr) * 1993-01-21 1999-03-03 Advanced Micro Devices, Inc. Système et procédé de mémoire électronique
US5568060A (en) * 1995-07-20 1996-10-22 Transwitch Corporation Circuit board insertion circuitry for high reliability backplanes
US6048739A (en) * 1997-12-18 2000-04-11 Honeywell Inc. Method of manufacturing a high density magnetic memory device
US5956267A (en) * 1997-12-18 1999-09-21 Honeywell Inc Self-aligned wordline keeper and method of manufacture therefor
US6872993B1 (en) 1999-05-25 2005-03-29 Micron Technology, Inc. Thin film memory device having local and external magnetic shielding
US6392922B1 (en) 2000-08-14 2002-05-21 Micron Technology, Inc. Passivated magneto-resistive bit structure and passivation method therefor
US6413788B1 (en) 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6914805B2 (en) * 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
KR100515053B1 (ko) * 2002-10-02 2005-09-14 삼성전자주식회사 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치
US7078239B2 (en) 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
US7112454B2 (en) * 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3680061A (en) * 1970-04-30 1972-07-25 Ncr Co Integrated circuit bipolar random access memory system with low stand-by power consumption
US3778784A (en) * 1972-02-14 1973-12-11 Intel Corp Memory system incorporating a memory cell and timing means on a single semiconductor substrate
US3786437A (en) * 1972-01-03 1974-01-15 Honeywell Inf Systems Random access memory system utilizing an inverting cell concept
US3848237A (en) * 1973-02-20 1974-11-12 Advanced Memory Syst High speed mos random access read/write memory device
US3906464A (en) * 1974-06-03 1975-09-16 Motorola Inc External data control preset system for inverting cell random access memory
US3912947A (en) * 1974-07-05 1975-10-14 Motorola Inc Mos data bus control circuitry
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3942160A (en) * 1974-06-03 1976-03-02 Motorola, Inc. Bit sense line speed-up circuit for MOS RAM
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
FR2337917A1 (fr) * 1976-01-08 1977-08-05 Mostek Corp Memoire a acces direct en circuit integre

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501754A (en) * 1968-05-21 1970-03-17 Ferroxcube Corp Computer memory strobing circuit for providing an accurately positioned strobe pulse
US3564517A (en) * 1968-06-24 1971-02-16 Gen Motors Corp Combined dro and ndro coincident current memory
US3665473A (en) * 1970-12-18 1972-05-23 North American Rockwell Address decode logic for a semiconductor memory
US3806880A (en) * 1971-12-02 1974-04-23 North American Rockwell Multiplexing system for address decode logic
US3940571A (en) * 1974-11-04 1976-02-24 Gte Sylvania Incorporated Drive circuitry with error detection

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3680061A (en) * 1970-04-30 1972-07-25 Ncr Co Integrated circuit bipolar random access memory system with low stand-by power consumption
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3786437A (en) * 1972-01-03 1974-01-15 Honeywell Inf Systems Random access memory system utilizing an inverting cell concept
US3778784A (en) * 1972-02-14 1973-12-11 Intel Corp Memory system incorporating a memory cell and timing means on a single semiconductor substrate
US3848237A (en) * 1973-02-20 1974-11-12 Advanced Memory Syst High speed mos random access read/write memory device
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3942160A (en) * 1974-06-03 1976-03-02 Motorola, Inc. Bit sense line speed-up circuit for MOS RAM
US3906464A (en) * 1974-06-03 1975-09-16 Motorola Inc External data control preset system for inverting cell random access memory
US3912947A (en) * 1974-07-05 1975-10-14 Motorola Inc Mos data bus control circuitry
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
FR2290000A1 (fr) * 1974-11-04 1976-05-28 Intel Corp Memoire a acces aleatoire a semi-conducteur
FR2337917A1 (fr) * 1976-01-08 1977-08-05 Mostek Corp Memoire a acces direct en circuit integre

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Also Published As

Publication number Publication date
US4044330A (en) 1977-08-23
DE2711679A1 (de) 1977-10-13
BE852978A (fr) 1977-07-18
CA1087752A (fr) 1980-10-14
DE2711679C2 (de) 1985-03-07
GB1523580A (en) 1978-09-06
JPS52122440A (en) 1977-10-14
JPS606038B2 (ja) 1985-02-15
FR2346773B1 (fr) 1984-03-30

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Legal Events

Date Code Title Description
ST Notification of lapse