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FR2298160A1 - Memoire semi-conductrice - Google Patents

Memoire semi-conductrice

Info

Publication number
FR2298160A1
FR2298160A1 FR7601088A FR7601088A FR2298160A1 FR 2298160 A1 FR2298160 A1 FR 2298160A1 FR 7601088 A FR7601088 A FR 7601088A FR 7601088 A FR7601088 A FR 7601088A FR 2298160 A1 FR2298160 A1 FR 2298160A1
Authority
FR
France
Prior art keywords
semi
conductor memory
conductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7601088A
Other languages
English (en)
Other versions
FR2298160B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2298160A1 publication Critical patent/FR2298160A1/fr
Application granted granted Critical
Publication of FR2298160B1 publication Critical patent/FR2298160B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
FR7601088A 1975-01-17 1976-01-16 Memoire semi-conductrice Granted FR2298160A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7500550A NL7500550A (nl) 1975-01-17 1975-01-17 Halfgeleider-geheugeninrichting.

Publications (2)

Publication Number Publication Date
FR2298160A1 true FR2298160A1 (fr) 1976-08-13
FR2298160B1 FR2298160B1 (fr) 1982-03-26

Family

ID=19823005

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7601088A Granted FR2298160A1 (fr) 1975-01-17 1976-01-16 Memoire semi-conductrice

Country Status (11)

Country Link
US (1) US4019197A (fr)
JP (1) JPS568440B2 (fr)
AU (1) AU502150B2 (fr)
CA (1) CA1070016A (fr)
CH (1) CH600485A5 (fr)
DE (1) DE2600337C2 (fr)
FR (1) FR2298160A1 (fr)
GB (1) GB1536321A (fr)
IT (1) IT1054083B (fr)
NL (1) NL7500550A (fr)
SE (1) SE412295B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2366668A2 (fr) * 1976-09-29 1978-04-28 Siemens Ag Transistor a effet de champ de memorisation a canal n
FR2455333A1 (fr) * 1979-04-26 1980-11-21 Itt Cellule de memoire a semi-conducteur programmable
FR2499290A1 (fr) * 1981-02-02 1982-08-06 Xicor Inc Dispositif de memoire dense remanent electriquement alterable avec electrode de couplage dans le substrat

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120679A (en) * 1975-04-16 1976-10-22 Agency Of Ind Science & Technol Semiconductive non-volatile memory element
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
US4132904A (en) * 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4257056A (en) * 1979-06-27 1981-03-17 National Semiconductor Corporation Electrically erasable read only memory
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57162371A (en) * 1981-03-30 1982-10-06 Seiko Epson Corp Mos semiconductor memory device
JPS5898977A (ja) * 1981-12-08 1983-06-13 Matsushita Electronics Corp 不揮発性メモリ
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4490900A (en) * 1982-01-29 1985-01-01 Seeq Technology, Inc. Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
WO1983003166A1 (fr) * 1982-03-09 1983-09-15 Rca Corp Dispositif de memoire remanente a porte flottante et modifiable electriquement
JPS58157170A (ja) * 1982-03-15 1983-09-19 Toshiba Corp 不揮発性半導体メモリ装置
JPS59155968A (ja) * 1983-02-25 1984-09-05 Toshiba Corp 半導体記憶装置
JPS6018967A (ja) * 1983-07-12 1985-01-31 Seiko Epson Corp 半導体記憶装置の製造方法
US4566023A (en) * 1983-08-12 1986-01-21 The Regents Of The University Of California Squeezable electron tunnelling junction
DE3481667D1 (de) 1983-08-29 1990-04-19 Seeq Technology Inc Mos-speicherzelle mit schwimmendem gate und verfahren zu ihrer verfertigung.
NL8402023A (nl) * 1984-06-27 1986-01-16 Philips Nv Halfgeleiderinrichting met een niet-vluchtige geheugentransistor.
IT1213218B (it) * 1984-09-25 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.
JPH06101548B2 (ja) * 1985-03-30 1994-12-12 株式会社東芝 半導体記憶装置
JPS60258968A (ja) * 1985-05-20 1985-12-20 Agency Of Ind Science & Technol 浮遊ゲート形不揮発性半導体メモリ
US4683554A (en) * 1985-09-13 1987-07-28 Ncr Corporation Direct write nonvolatile memory cells
IT1199828B (it) * 1986-12-22 1989-01-05 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit
USRE37308E1 (en) * 1986-12-22 2001-08-07 Stmicroelectronics S.R.L. EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit
US4924278A (en) * 1987-06-19 1990-05-08 Advanced Micro Devices, Inc. EEPROM using a merged source and control gate
JP2779623B2 (ja) * 1988-06-06 1998-07-23 セイコーインスツルメンツ株式会社 半導体不揮発性メモリ
US5324677A (en) * 1988-06-15 1994-06-28 Seiko Instruments Inc. Method of making memory cell and a peripheral circuit
JPH02125470A (ja) * 1988-06-15 1990-05-14 Seiko Instr Inc 半導体不揮発性メモリ
US5223731A (en) * 1988-06-30 1993-06-29 Goldstar Electron Co., Ltd. EPROM cell using trench isolation to provide leak current immunity
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
EP0354457B1 (fr) * 1988-08-08 1994-06-22 National Semiconductor Corporation Cellule de mémoire morte bipolaire et à effet de champ électriquement effaçable et programmable et sa méthode de fabrication
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
IT1232354B (it) * 1989-09-04 1992-01-28 Sgs Thomson Microelectronics Procedimento per la realizzazione di celle di memoria eeprom a singolo livello di polisilicio e ossido sottile utilizzando ossidazione differenziale.
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
JP3083547B2 (ja) * 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
JP2536686B2 (ja) * 1990-11-06 1996-09-18 松下電工株式会社 不揮発性メモリ
WO1994000881A1 (fr) * 1992-06-19 1994-01-06 Lattice Semiconductor Corporation Cellule de memoire e2prom flash a monocouche de polysilicium
US5301150A (en) * 1992-06-22 1994-04-05 Intel Corporation Flash erasable single poly EPROM device
US5418390A (en) * 1993-03-19 1995-05-23 Lattice Semiconductor Corporation Single polysilicon layer E2 PROM cell
JP3344598B2 (ja) * 1993-11-25 2002-11-11 株式会社デンソー 半導体不揮発メモリ装置
JP2663863B2 (ja) * 1994-04-19 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
US5736764A (en) * 1995-11-21 1998-04-07 Programmable Microelectronics Corporation PMOS flash EEPROM cell with single poly
US5841165A (en) * 1995-11-21 1998-11-24 Programmable Microelectronics Corporation PMOS flash EEPROM cell with single poly
US5777361A (en) * 1996-06-03 1998-07-07 Motorola, Inc. Single gate nonvolatile memory cell and method for accessing the same
EP0820103B1 (fr) 1996-07-18 2002-10-02 STMicroelectronics S.r.l. Cellule Flash EEPROM à un seul niveau de polysilicium et méthode pour sa fabrication
US5786614A (en) * 1997-04-08 1998-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Separated floating gate for EEPROM application
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6303942B1 (en) 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6954558B2 (en) * 2003-06-24 2005-10-11 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device
JP2005039067A (ja) * 2003-07-15 2005-02-10 Renesas Technology Corp 不揮発性半導体記憶装置
US7280712B2 (en) * 2005-08-04 2007-10-09 Intel Corporation Method and apparatus for phase shifiting an optical beam in an optical device
JP4622902B2 (ja) * 2006-03-17 2011-02-02 セイコーエプソン株式会社 不揮発性半導体記憶装置
US20070280309A1 (en) * 2006-05-23 2007-12-06 Ansheng Liu Optical waveguide with single sided coplanar contact optical phase modulator
JP5561959B2 (ja) * 2008-06-25 2014-07-30 セイコーインスツル株式会社 静電振動子及び電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3825946A (en) * 1971-01-15 1974-07-23 Intel Corp Electrically alterable floating gate device and method for altering same
JPS525233B2 (fr) * 1972-02-29 1977-02-10
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
US3853496A (en) * 1973-01-02 1974-12-10 Gen Electric Method of making a metal insulator silicon field effect transistor (mis-fet) memory device and the product
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2366668A2 (fr) * 1976-09-29 1978-04-28 Siemens Ag Transistor a effet de champ de memorisation a canal n
FR2455333A1 (fr) * 1979-04-26 1980-11-21 Itt Cellule de memoire a semi-conducteur programmable
FR2499290A1 (fr) * 1981-02-02 1982-08-06 Xicor Inc Dispositif de memoire dense remanent electriquement alterable avec electrode de couplage dans le substrat

Also Published As

Publication number Publication date
JPS5197345A (fr) 1976-08-26
AU502150B2 (en) 1979-07-12
IT1054083B (it) 1981-11-10
JPS568440B2 (fr) 1981-02-24
AU1018876A (en) 1977-07-21
CH600485A5 (fr) 1978-06-15
CA1070016A (fr) 1980-01-15
US4019197A (en) 1977-04-19
SE412295B (sv) 1980-02-25
DE2600337A1 (de) 1976-07-22
FR2298160B1 (fr) 1982-03-26
GB1536321A (en) 1978-12-20
DE2600337C2 (de) 1982-12-30
NL7500550A (nl) 1976-07-20
SE7600322L (sv) 1976-07-19

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Legal Events

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ST Notification of lapse