FR2268363B1 - - Google Patents
Info
- Publication number
- FR2268363B1 FR2268363B1 FR7511963A FR7511963A FR2268363B1 FR 2268363 B1 FR2268363 B1 FR 2268363B1 FR 7511963 A FR7511963 A FR 7511963A FR 7511963 A FR7511963 A FR 7511963A FR 2268363 B1 FR2268363 B1 FR 2268363B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49044324A JPS50138776A (de) | 1974-04-17 | 1974-04-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2268363A1 FR2268363A1 (de) | 1975-11-14 |
FR2268363B1 true FR2268363B1 (de) | 1978-06-23 |
Family
ID=12688304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7511963A Expired FR2268363B1 (de) | 1974-04-17 | 1975-04-17 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS50138776A (de) |
CA (1) | CA1023480A (de) |
DE (1) | DE2517049C3 (de) |
FR (1) | FR2268363B1 (de) |
GB (1) | GB1507701A (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075651A (en) * | 1976-03-29 | 1978-02-21 | Varian Associates, Inc. | High speed fet employing ternary and quarternary iii-v active layers |
JPS587071B2 (ja) * | 1976-06-30 | 1983-02-08 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JPS588151B2 (ja) * | 1976-09-30 | 1983-02-14 | 松下電器産業株式会社 | 接合型電界効果トランジスタの製造方法 |
FR2465317A2 (fr) * | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
FR2452791A1 (fr) * | 1979-03-28 | 1980-10-24 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
JPS55153377A (en) * | 1979-05-18 | 1980-11-29 | Matsushita Electronics Corp | Production of semiconductor device |
GB2145558A (en) * | 1983-08-23 | 1985-03-27 | Standard Telephones Cables Ltd | Field effect transistor |
JPS63228672A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 化合物半導体集積回路装置 |
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1974
- 1974-04-17 JP JP49044324A patent/JPS50138776A/ja active Pending
-
1975
- 1975-04-14 GB GB15167/75A patent/GB1507701A/en not_active Expired
- 1975-04-16 CA CA224,731A patent/CA1023480A/en not_active Expired
- 1975-04-17 FR FR7511963A patent/FR2268363B1/fr not_active Expired
- 1975-04-17 DE DE2517049A patent/DE2517049C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2517049B2 (de) | 1978-09-14 |
FR2268363A1 (de) | 1975-11-14 |
GB1507701A (en) | 1978-04-19 |
CA1023480A (en) | 1977-12-27 |
DE2517049C3 (de) | 1979-05-10 |
JPS50138776A (de) | 1975-11-05 |
DE2517049A1 (de) | 1975-10-30 |