FR2248613B1 - - Google Patents

Info

Publication number: FR2248613B1
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR7434912A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

TDK Micronas GmbH

ITT Inc

Original Assignee

Deutsche ITT Industries GmbH

ITT Industries Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-10-17

Filing date

1974-10-17

Publication date

1978-12-08

1974-10-17 Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH

1975-05-16 Publication of FR2248613A1 publication Critical patent/FR2248613A1/fr

1978-12-08 Application granted granted Critical

1978-12-08 Publication of FR2248613B1 publication Critical patent/FR2248613B1/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion

FR7434912A 1973-10-17 1974-10-17 Expired FR2248613B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19732351985 DE2351985A1 (de)	1973-10-17	1973-10-17	Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung

Publications (2)

Publication Number	Publication Date
FR2248613A1 FR2248613A1 (fr)	1975-05-16
FR2248613B1 true FR2248613B1 (fr)	1978-12-08

Family

ID=5895613

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7434912A Expired FR2248613B1 (fr)	1973-10-17	1974-10-17

Country Status (7)

Country	Link
US (1)	US3956035A (fr)
JP (1)	JPS50106592A (fr)
DE (1)	DE2351985A1 (fr)
FR (1)	FR2248613B1 (fr)
GB (1)	GB1483801A (fr)
IT (1)	IT1022944B (fr)
NL (1)	NL7413266A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54136281A (en) *	1978-04-14	1979-10-23	Toko Inc	Semiconductor device and method of fabricating same
JPS56126960A (en) *	1980-03-11	1981-10-05	Nec Corp	Manufacture of semiconductor device
JPS56129338A (en) *	1980-03-14	1981-10-09	Nec Corp	Semiconductor device
JPS5750473A (en) *	1980-09-11	1982-03-24	Nec Corp	Semiconductor integrated circuit device
NL8104862A (nl) *	1981-10-28	1983-05-16	Philips Nv	Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
US4613885A (en) *	1982-02-01	1986-09-23	Texas Instruments Incorporated	High-voltage CMOS process
US4442591A (en) *	1982-02-01	1984-04-17	Texas Instruments Incorporated	High-voltage CMOS process
DE3361832D1 (en) *	1982-04-19	1986-02-27	Matsushita Electric Ind Co Ltd	Semiconductor ic and method of making the same
US4641172A (en) *	1982-08-26	1987-02-03	Mitsubishi Denki Kabushiki Kaisha	Buried PN junction isolation regions for high power semiconductor devices
JPS60194558A (ja) *	1984-03-16	1985-10-03	Hitachi Ltd	半導体装置の製造方法
US6005282A (en) *	1986-09-26	1999-12-21	Analog Devices, Inc.	Integrated circuit with complementary isolated bipolar transistors
DE3725429A1 (de) *	1987-07-31	1989-02-09	Bosch Gmbh Robert	Monolithisch integrierte schaltungsanordnung
USRE38510E1 (en) *	1987-12-22	2004-05-04	Stmicroelectronics Srl	Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
IT1217322B (it) *	1987-12-22	1990-03-22	Sgs Microelettronica Spa	Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
IT1218230B (it) *	1988-04-28	1990-04-12	Sgs Thomson Microelectronics	Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
US4910160A (en) *	1989-06-06	1990-03-20	National Semiconductor Corporation	High voltage complementary NPN/PNP process
EP0451423A1 (fr) *	1990-04-10	1991-10-16	International Business Machines Corporation	Structure de transistor PNP vertical à collecteur isolé

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3449643A (en) *	1966-09-09	1969-06-10	Hitachi Ltd	Semiconductor integrated circuit device
FR1510057A (fr) *	1966-12-06	1968-01-19	Csf	Transistors intégrés complémentaires npn et pnp à collecteurs isolés
FR1559607A (fr) *	1967-06-30	1969-03-14
FR1559611A (fr) *	1967-06-30	1969-03-14
FR1559608A (fr) *	1967-06-30	1969-03-14
US3622842A (en) *	1969-12-29	1971-11-23	Ibm	Semiconductor device having high-switching speed and method of making

1973
- 1973-10-17 DE DE19732351985 patent/DE2351985A1/de active Pending
1974
- 1974-10-01 US US05/510,929 patent/US3956035A/en not_active Expired - Lifetime
- 1974-10-09 NL NL7413266A patent/NL7413266A/xx not_active Application Discontinuation
- 1974-10-17 IT IT28513/74A patent/IT1022944B/it active
- 1974-10-17 FR FR7434912A patent/FR2248613B1/fr not_active Expired
- 1974-10-17 GB GB45043/74A patent/GB1483801A/en not_active Expired
- 1974-10-17 JP JP49118749A patent/JPS50106592A/ja active Pending

Also Published As

Publication number	Publication date
NL7413266A (nl)	1975-04-21
US3956035A (en)	1976-05-11
DE2351985A1 (de)	1975-04-30
JPS50106592A (fr)	1975-08-22
GB1483801A (en)	1977-08-24
IT1022944B (it)	1978-04-20
FR2248613A1 (fr)	1975-05-16

Publication	Publication Date	Title
AR201758A1 (fr)	1975-04-15
AU476761B2 (fr)	1976-09-30
AU465372B2 (fr)	1975-09-25
AR201235Q (fr)	1975-02-21
AR201231Q (fr)	1975-02-21
AU474593B2 (fr)	1976-07-29
AU474511B2 (fr)	1976-07-22
AU474838B2 (fr)	1976-08-05
AU471343B2 (fr)	1976-04-15
AU465453B2 (fr)	1975-09-25
AU465434B2 (fr)	1975-09-25
AU450229B2 (fr)	1974-07-04
AU476714B2 (fr)	1976-09-30
AR201229Q (fr)	1975-02-21
AU466283B2 (fr)	1975-10-23
AR199451A1 (fr)	1974-08-30
AU476696B2 (fr)	1976-09-30
AU472848B2 (fr)	1976-06-03
AU477823B2 (fr)	1975-06-19
AR197627A1 (fr)	1974-04-23
AR196382A1 (fr)	1973-12-18
AR200256A1 (fr)	1974-10-31
AU461342B2 (fr)	1975-05-22
AR210729A1 (fr)	1977-09-15
AR193950A1 (fr)	1973-05-31

Legal Events

Date	Code	Title	Description
1980-08-08	ST	Notification of lapse