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JPS56129338A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56129338A
JPS56129338A JP3253080A JP3253080A JPS56129338A JP S56129338 A JPS56129338 A JP S56129338A JP 3253080 A JP3253080 A JP 3253080A JP 3253080 A JP3253080 A JP 3253080A JP S56129338 A JPS56129338 A JP S56129338A
Authority
JP
Japan
Prior art keywords
substrate
collector
layer
intermediate layer
vci
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3253080A
Other languages
Japanese (ja)
Other versions
JPH0122745B2 (en
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3253080A priority Critical patent/JPS56129338A/en
Publication of JPS56129338A publication Critical patent/JPS56129338A/en
Publication of JPH0122745B2 publication Critical patent/JPH0122745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the malfunction due to alpha-rays by a device wherein a collector layer and a substrate is separated from each other by a P layer and/or an insulative material, in an N-P-N bi-polar transistor using an N type Si substrate. CONSTITUTION:An N<+> buried layer 3 and a P type intermediate layer are selectively diffused into an N type Si substrate 1 by turns. Next, N epitaxial layers 4 are formed and separated by P<+> layers 2 and then connecting layers 8 ae formed for P base 6, N emitter 7 and N collector 5. The substrate 1 is given with the minimum potential. When alpha-rays enter into this structure, VCI is induced between the collector and the intermediate layer and VIS is induced between the intermediate layer and the substrate, so that the potential fluctuation at the collector is represented by VCS=VCI+VIS. Here since VCI and VIS have opposite signs, VCS=0 is obtained when concentration of each layer and a width of the intermediate layer (capacity between the intermediate and the substrate) are properly selected and their absolute values are made equal to each other. Therefore, it becomes possible to completely eliminate of fairly reduce the fluctuation in the collector potential, and particularly malfunctions of the bi-polar memory IC can be reduced or prevented.
JP3253080A 1980-03-14 1980-03-14 Semiconductor device Granted JPS56129338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3253080A JPS56129338A (en) 1980-03-14 1980-03-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3253080A JPS56129338A (en) 1980-03-14 1980-03-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56129338A true JPS56129338A (en) 1981-10-09
JPH0122745B2 JPH0122745B2 (en) 1989-04-27

Family

ID=12361490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3253080A Granted JPS56129338A (en) 1980-03-14 1980-03-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56129338A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0182067A2 (en) * 1984-10-22 1986-05-28 Hitachi, Ltd. Semiconductor device having increased immunity against alpha-particles and external noise

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936291A (en) * 1972-08-02 1974-04-04
JPS50106592A (en) * 1973-10-17 1975-08-22
JPS50141979A (en) * 1974-05-01 1975-11-15

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936291A (en) * 1972-08-02 1974-04-04
JPS50106592A (en) * 1973-10-17 1975-08-22
JPS50141979A (en) * 1974-05-01 1975-11-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0182067A2 (en) * 1984-10-22 1986-05-28 Hitachi, Ltd. Semiconductor device having increased immunity against alpha-particles and external noise

Also Published As

Publication number Publication date
JPH0122745B2 (en) 1989-04-27

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