Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
  • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/34—DC amplifiers in which all stages are DC-coupled
  • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
  • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
  • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Bipolar Integrated Circuits (AREA)
• Semiconductor Integrated Circuits (AREA)
• Amplifiers (AREA)
• Element Separation (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=5820199

Family Applications (1)

Country Status (6)

Families Citing this family (7)

Family Cites Families (3)

• 1971
  • 1971-09-22 DE DE2147179A patent/DE2147179C3/en not_active Expired
• 1972
  • 1972-09-21 NL NL7212778A patent/NL7212778A/xx not_active Application Discontinuation
  • 1972-09-21 GB GB1930175A patent/GB1413467A/en not_active Expired
  • 1972-09-21 GB GB1815675A patent/GB1413466A/en not_active Expired
  • 1972-09-21 IT IT29475/72A patent/IT967693B/en active
  • 1972-09-22 JP JP47095648A patent/JPS5823749B2/en not_active Expired
  • 1972-09-22 FR FR7233736A patent/FR2153437B1/fr not_active Expired

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