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FR2153437B1 - - Google Patents

Info

Publication number
FR2153437B1
FR2153437B1 FR7233736A FR7233736A FR2153437B1 FR 2153437 B1 FR2153437 B1 FR 2153437B1 FR 7233736 A FR7233736 A FR 7233736A FR 7233736 A FR7233736 A FR 7233736A FR 2153437 B1 FR2153437 B1 FR 2153437B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7233736A
Other versions
FR2153437A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2153437A1 publication Critical patent/FR2153437A1/fr
Application granted granted Critical
Publication of FR2153437B1 publication Critical patent/FR2153437B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
FR7233736A 1971-09-22 1972-09-22 Expired FR2153437B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2147179A DE2147179C3 (de) 1971-09-22 1971-09-22 Monolithisch integrierte Stromquelle

Publications (2)

Publication Number Publication Date
FR2153437A1 FR2153437A1 (fr) 1973-05-04
FR2153437B1 true FR2153437B1 (fr) 1976-10-29

Family

ID=5820199

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7233736A Expired FR2153437B1 (fr) 1971-09-22 1972-09-22

Country Status (6)

Country Link
JP (1) JPS5823749B2 (fr)
DE (1) DE2147179C3 (fr)
FR (1) FR2153437B1 (fr)
GB (2) GB1413467A (fr)
IT (1) IT967693B (fr)
NL (1) NL7212778A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3220736A1 (de) * 1981-08-21 1983-04-28 Burr-Brown Research Corp., 85734 Tucson, Ariz. Schaltungsanordnung und verfahren zur sperrstromkompensation bei halbleitern
US4430624A (en) * 1982-06-24 1984-02-07 Motorola, Inc. Current mirror circuit arrangement
GB2135846B (en) * 1983-02-04 1986-03-12 Standard Telephones Cables Ltd Current splitter
JPS6089960A (ja) * 1984-08-06 1985-05-20 Nec Corp 半導体集積回路装置
DE3933433A1 (de) * 1988-11-02 1990-05-03 Bosch Gmbh Robert Stromregler
JP3457126B2 (ja) * 1996-07-12 2003-10-14 三菱電機株式会社 車両用交流発電機の制御装置
JP5700896B1 (ja) * 2014-03-20 2015-04-15 株式会社ショーワ カバー部材および緩衝装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769584A (en) * 1954-09-20 1957-03-13 Mullard Radio Valve Co Ltd Improvements in or relating to means for compensating transistor circuit arrangements in relation to external conditions
GB891229A (en) * 1958-10-17 1962-03-14 Advanced Res Associates Inc Circuit for thermal compensation of transistors
US3509362A (en) * 1966-08-19 1970-04-28 Rca Corp Switching circuit

Also Published As

Publication number Publication date
NL7212778A (fr) 1973-03-26
FR2153437A1 (fr) 1973-05-04
GB1413467A (en) 1975-11-12
IT967693B (it) 1974-03-11
JPS4841681A (fr) 1973-06-18
DE2147179A1 (de) 1973-03-29
DE2147179B2 (de) 1977-07-28
DE2147179C3 (de) 1984-11-08
GB1413466A (en) 1975-11-12
JPS5823749B2 (ja) 1983-05-17

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Legal Events

Date Code Title Description
ST Notification of lapse