FR2062743A5 - Germanium silicon oxynitride passivation of semiconductor - devices - Google Patents
Germanium silicon oxynitride passivation of semiconductor - devicesInfo
- Publication number
- FR2062743A5 FR2062743A5 FR7035031A FR7035031A FR2062743A5 FR 2062743 A5 FR2062743 A5 FR 2062743A5 FR 7035031 A FR7035031 A FR 7035031A FR 7035031 A FR7035031 A FR 7035031A FR 2062743 A5 FR2062743 A5 FR 2062743A5
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- devices
- silicon oxynitride
- germanium silicon
- oxynitride passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002161 passivation Methods 0.000 title abstract 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000012298 atmosphere Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Layers are deposited by d. c. discharge from solid sources of Ge, Si or Ge-Si containing oxygen in a nitrogen atmosphere of 3-100 mu Hg at flow rate of 2.8 to 281/min. Alternatively pure Si and Ge may be used in an atmosphere of nitrogen and oxygen. The layers are used for passivation or as diffusion masks and are more resistant to atmospheric or ionic contamination and radiation than SiO2; may be thinner for diffusion masks and are not attacked by contact metals (e.g. Al) when forming alloyed contacts up to 850 degrees C.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87411169A | 1969-11-05 | 1969-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2062743A5 true FR2062743A5 (en) | 1971-06-25 |
Family
ID=25362997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7035031A Expired FR2062743A5 (en) | 1969-11-05 | 1970-09-28 | Germanium silicon oxynitride passivation of semiconductor - devices |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2062743A5 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001034530A1 (en) * | 1999-11-10 | 2001-05-17 | Corning Incorporated | Germanium silicon oxynitride high index films for planar waveguides |
-
1970
- 1970-09-28 FR FR7035031A patent/FR2062743A5/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001034530A1 (en) * | 1999-11-10 | 2001-05-17 | Corning Incorporated | Germanium silicon oxynitride high index films for planar waveguides |
| US6408125B1 (en) | 1999-11-10 | 2002-06-18 | Corning Incorporated | Germanium silicon oxynitride high index films for planar waveguides |
| US6449420B1 (en) | 1999-11-10 | 2002-09-10 | Corning Incorporated | Germanium silicon oxynitride high index films for planar waveguides |
| JP2003513875A (en) * | 1999-11-10 | 2003-04-15 | コーニング・インコーポレーテッド | Germanium silicon oxynitride high refractive index thin films for planar waveguides |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |