FR1549572A - - Google Patents
Info
- Publication number
- FR1549572A FR1549572A FR1549572DA FR1549572A FR 1549572 A FR1549572 A FR 1549572A FR 1549572D A FR1549572D A FR 1549572DA FR 1549572 A FR1549572 A FR 1549572A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/037—Bistable circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB57536/66A GB1162109A (en) | 1966-12-22 | 1966-12-22 | Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices |
US69537768A | 1968-01-03 | 1968-01-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1549572A true FR1549572A (fr) | 1968-12-13 |
Family
ID=26267690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1549572D Expired FR1549572A (fr) | 1966-12-22 | 1967-10-30 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3531778A (fr) |
DE (1) | DE1524900C3 (fr) |
FR (1) | FR1549572A (fr) |
GB (1) | GB1162109A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2064094A1 (fr) * | 1969-10-02 | 1971-07-16 | Ibm |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3618052A (en) * | 1969-12-05 | 1971-11-02 | Cogar Corp | Bistable memory with predetermined turn-on state |
US3764825A (en) * | 1972-01-10 | 1973-10-09 | R Stewart | Active element memory |
JPS5833634B2 (ja) * | 1979-02-28 | 1983-07-21 | 富士通株式会社 | メモリセルアレイの駆動方式 |
US4297598A (en) * | 1979-04-05 | 1981-10-27 | General Instrument Corporation | I2 L Sensing circuit with increased sensitivity |
DE2944141A1 (de) * | 1979-11-02 | 1981-05-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte speicheranordnung |
US4613958A (en) * | 1984-06-28 | 1986-09-23 | International Business Machines Corporation | Gate array chip |
US7174419B1 (en) | 2003-05-30 | 2007-02-06 | Netlogic Microsystems, Inc | Content addressable memory device with source-selecting data translator |
US6856527B1 (en) | 2003-05-30 | 2005-02-15 | Netlogic Microsystems, Inc. | Multi-compare content addressable memory cell |
US6842360B1 (en) | 2003-05-30 | 2005-01-11 | Netlogic Microsystems, Inc. | High-density content addressable memory cell |
US9349738B1 (en) * | 2008-02-04 | 2016-05-24 | Broadcom Corporation | Content addressable memory (CAM) device having substrate array line structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5247313B1 (fr) * | 1959-05-06 | 1977-12-01 | ||
NL298196A (fr) * | 1962-09-22 | |||
US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
US3436738A (en) * | 1966-06-28 | 1969-04-01 | Texas Instruments Inc | Plural emitter type active element memory |
-
1966
- 1966-12-22 GB GB57536/66A patent/GB1162109A/en not_active Expired
-
1967
- 1967-10-30 FR FR1549572D patent/FR1549572A/fr not_active Expired
- 1967-12-28 DE DE1524900A patent/DE1524900C3/de not_active Expired
-
1968
- 1968-01-03 US US695377A patent/US3531778A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2064094A1 (fr) * | 1969-10-02 | 1971-07-16 | Ibm |
Also Published As
Publication number | Publication date |
---|---|
GB1162109A (en) | 1969-08-20 |
US3531778A (en) | 1970-09-29 |
DE1524900A1 (de) | 1970-11-26 |
DE1524900C3 (de) | 1974-06-12 |
DE1524900B2 (de) | 1973-10-31 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |