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FR1548858A - - Google Patents

Info

Publication number
FR1548858A
FR1548858A FR1548858DA FR1548858A FR 1548858 A FR1548858 A FR 1548858A FR 1548858D A FR1548858D A FR 1548858DA FR 1548858 A FR1548858 A FR 1548858A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1548858A publication Critical patent/FR1548858A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
FR1548858D 1967-01-16 1967-12-07 Expired FR1548858A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60943867A 1967-01-16 1967-01-16

Publications (1)

Publication Number Publication Date
FR1548858A true FR1548858A (fr) 1968-12-06

Family

ID=24440801

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1548858D Expired FR1548858A (fr) 1967-01-16 1967-12-07

Country Status (4)

Country Link
US (1) US3479233A (fr)
FR (1) FR1548858A (fr)
GB (1) GB1194752A (fr)
NL (1) NL160983C (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067058A1 (fr) * 1969-11-10 1971-08-13 Ibm
FR2092730A1 (en) * 1970-06-12 1972-01-28 Radiotechnique Compelec Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures
FR2134360A1 (fr) * 1971-04-28 1972-12-08 Ibm

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
DE2131993C2 (de) * 1971-06-28 1984-10-11 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen eines niederohmigen Anschlusses
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4571275A (en) * 1983-12-19 1986-02-18 International Business Machines Corporation Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183178A (en) * 1961-06-06 1965-05-11 Hydrocarbon Research Inc Two stage hydrogenating process employing two different particle sizes
NL297820A (fr) * 1962-10-05
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067058A1 (fr) * 1969-11-10 1971-08-13 Ibm
FR2092730A1 (en) * 1970-06-12 1972-01-28 Radiotechnique Compelec Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures
FR2134360A1 (fr) * 1971-04-28 1972-12-08 Ibm

Also Published As

Publication number Publication date
US3479233A (en) 1969-11-18
NL6800572A (fr) 1968-07-17
NL160983B (nl) 1979-07-16
GB1194752A (en) 1970-06-10
NL160983C (nl) 1979-12-17

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Legal Events

Date Code Title Description
ST Notification of lapse