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FR1523867A - Microcircuits semiconducteurs - Google Patents

Microcircuits semiconducteurs

Info

Publication number
FR1523867A
FR1523867A FR107404A FR107404A FR1523867A FR 1523867 A FR1523867 A FR 1523867A FR 107404 A FR107404 A FR 107404A FR 107404 A FR107404 A FR 107404A FR 1523867 A FR1523867 A FR 1523867A
Authority
FR
France
Prior art keywords
semiconductor microcircuits
microcircuits
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR107404A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1523867A publication Critical patent/FR1523867A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR107404A 1966-07-01 1967-05-23 Microcircuits semiconducteurs Expired FR1523867A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56216966A 1966-07-01 1966-07-01

Publications (1)

Publication Number Publication Date
FR1523867A true FR1523867A (fr) 1968-05-03

Family

ID=24245093

Family Applications (1)

Application Number Title Priority Date Filing Date
FR107404A Expired FR1523867A (fr) 1966-07-01 1967-05-23 Microcircuits semiconducteurs

Country Status (8)

Country Link
US (1) US3423650A (fr)
DE (1) DE1614373B1 (fr)
ES (1) ES342404A1 (fr)
FR (1) FR1523867A (fr)
GB (1) GB1154805A (fr)
NL (1) NL6709160A (fr)
SE (1) SE334678B (fr)
SU (1) SU457237A3 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2042556A1 (fr) * 1969-05-12 1971-02-12 Eastman Kodak Co

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474308A (en) * 1966-12-13 1969-10-21 Texas Instruments Inc Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors
US3581165A (en) * 1967-01-23 1971-05-25 Motorola Inc Voltage distribution system for integrated circuits utilizing low resistivity semiconductive paths for the transmission of voltages
US3772097A (en) * 1967-05-09 1973-11-13 Motorola Inc Epitaxial method for the fabrication of a distributed semiconductor power supply containing a decoupling capacitor
GB1193465A (en) * 1967-08-09 1970-06-03 Associated Semiconductor Mft Improvements in Semiconductor Integrated Circuits
US3517280A (en) * 1967-10-17 1970-06-23 Ibm Four layer diode device insensitive to rate effect and method of manufacture
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
US3638081A (en) * 1968-08-13 1972-01-25 Ibm Integrated circuit having lightly doped expitaxial collector layer surrounding base and emitter elements and heavily doped buried collector larger in contact with the base element
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3590342A (en) * 1968-11-06 1971-06-29 Hewlett Packard Co Mos integrated circuit with regions of ground potential interconnected through the semiconductor substrate
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US4053336A (en) * 1972-05-30 1977-10-11 Ferranti Limited Method of manufacturing a semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks
US3860836A (en) * 1972-12-01 1975-01-14 Honeywell Inc Stabilization of emitter followers
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
US3974517A (en) * 1973-11-02 1976-08-10 Harris Corporation Metallic ground grid for integrated circuits
US4132573A (en) * 1977-02-08 1979-01-02 Murata Manufacturing Co., Ltd. Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion
JPS596514B2 (ja) * 1977-03-08 1984-02-13 日本電信電話株式会社 Pn接合分離法による低漏話モノリシツクpnpnスイツチマトリクス
US4261096A (en) * 1979-03-30 1981-04-14 Harris Corporation Process for forming metallic ground grid for integrated circuits
DE3213503A1 (de) * 1981-04-14 1982-12-02 Fairchild Camera and Instrument Corp., 94042 Mountain View, Calif. Ingetrierter schaltkreis
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
JPS58157151A (ja) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp 半導体集積回路装置
JPH063840B2 (ja) * 1989-03-31 1994-01-12 株式会社東芝 半導体装置
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
DE202009005474U1 (de) 2009-04-15 2010-09-02 Wellmann, Jürgen Zweighalter für Christbäume o.dgl. Dekorationselemente

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US360902A (en) * 1887-04-12 Perfume-receptacle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2042556A1 (fr) * 1969-05-12 1971-02-12 Eastman Kodak Co

Also Published As

Publication number Publication date
US3423650A (en) 1969-01-21
ES342404A1 (es) 1968-07-16
GB1154805A (en) 1969-06-11
SU457237A3 (ru) 1975-01-15
DE1614373C2 (fr) 1975-10-09
NL6709160A (fr) 1968-01-02
SE334678B (fr) 1971-05-03
DE1614373B1 (de) 1975-02-20

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