FR1500182A - Détecteurs infrarouges à semi-conducteurs - Google Patents
Détecteurs infrarouges à semi-conducteursInfo
- Publication number
- FR1500182A FR1500182A FR72189A FR72189A FR1500182A FR 1500182 A FR1500182 A FR 1500182A FR 72189 A FR72189 A FR 72189A FR 72189 A FR72189 A FR 72189A FR 1500182 A FR1500182 A FR 1500182A
- Authority
- FR
- France
- Prior art keywords
- infrared detectors
- semiconductor infrared
- semiconductor
- detectors
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
- G01J5/30—Electrical features thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR72189A FR1500182A (fr) | 1966-08-05 | 1966-08-05 | Détecteurs infrarouges à semi-conducteurs |
US654396A US3493752A (en) | 1966-08-05 | 1967-07-19 | Infrared radiation measuring system using a doped semiconductor detector element |
GB33981/67A GB1193445A (en) | 1966-08-05 | 1967-07-24 | Infra-Red Radiation Measuring System |
DE1967C0043042 DE1589626B2 (de) | 1966-08-05 | 1967-08-04 | Anordnung zur messung der intensitaet einer infrarotstrahlung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR72189A FR1500182A (fr) | 1966-08-05 | 1966-08-05 | Détecteurs infrarouges à semi-conducteurs |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1500182A true FR1500182A (fr) | 1967-11-03 |
Family
ID=8614926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR72189A Expired FR1500182A (fr) | 1966-08-05 | 1966-08-05 | Détecteurs infrarouges à semi-conducteurs |
Country Status (4)
Country | Link |
---|---|
US (1) | US3493752A (fr) |
DE (1) | DE1589626B2 (fr) |
FR (1) | FR1500182A (fr) |
GB (1) | GB1193445A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2361635A1 (de) * | 1973-12-11 | 1975-06-12 | Eichinger Peter | Halbleiter-gammastrahlungsdetektor |
US4168432A (en) * | 1978-01-16 | 1979-09-18 | Rca Corporation | Method of testing radiation hardness of a semiconductor device |
US4514624A (en) * | 1981-08-19 | 1985-04-30 | The Secretary Of State For Industry In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Photon drag detectors |
US4535232A (en) * | 1981-12-07 | 1985-08-13 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Method of biasing a photoconductive detector and detector apparatus therefor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2706792A (en) * | 1951-05-25 | 1955-04-19 | Gen Electric | X-ray detection |
US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
US3005107A (en) * | 1959-06-04 | 1961-10-17 | Hoffman Electronics Corp | Photoconductive devices |
US3202926A (en) * | 1961-06-16 | 1965-08-24 | Texas Instruments Inc | Gain control signal generator |
-
1966
- 1966-08-05 FR FR72189A patent/FR1500182A/fr not_active Expired
-
1967
- 1967-07-19 US US654396A patent/US3493752A/en not_active Expired - Lifetime
- 1967-07-24 GB GB33981/67A patent/GB1193445A/en not_active Expired
- 1967-08-04 DE DE1967C0043042 patent/DE1589626B2/de active Granted
Also Published As
Publication number | Publication date |
---|---|
DE1589626B2 (de) | 1976-11-04 |
GB1193445A (en) | 1970-06-03 |
US3493752A (en) | 1970-02-03 |
DE1589626A1 (de) | 1970-05-14 |
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