FR1375673A - Procédé de fabrication d'un dispositif à semi-conducteur - Google Patents
Procédé de fabrication d'un dispositif à semi-conducteurInfo
- Publication number
- FR1375673A FR1375673A FR894442A FR894442A FR1375673A FR 1375673 A FR1375673 A FR 1375673A FR 894442 A FR894442 A FR 894442A FR 894442 A FR894442 A FR 894442A FR 1375673 A FR1375673 A FR 1375673A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR894442A FR1375673A (fr) | 1961-04-14 | 1962-04-13 | Procédé de fabrication d'un dispositif à semi-conducteur |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0073482 | 1961-04-14 | ||
FR894442A FR1375673A (fr) | 1961-04-14 | 1962-04-13 | Procédé de fabrication d'un dispositif à semi-conducteur |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1375673A true FR1375673A (fr) | 1964-10-23 |
Family
ID=25996406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR894442A Expired FR1375673A (fr) | 1961-04-14 | 1962-04-13 | Procédé de fabrication d'un dispositif à semi-conducteur |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1375673A (fr) |
-
1962
- 1962-04-13 FR FR894442A patent/FR1375673A/fr not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE598393A (fr) | Procédé de fabrication d'un dispositif semi-conducteur en silicium | |
CH400370A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
CH392700A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1364466A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1293869A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
BE600139A (fr) | Procédé de fabrication d'un agencement semi-conducteur. | |
FR1451676A (fr) | Procédé de fabrication d'un dispositif semiconducteur | |
FR1522733A (fr) | Procédé de fabrication d'un dispositif semiconducteur | |
FR1206897A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
CH337888A (fr) | Procédé de fabrication d'un dispositif thermoélectrique | |
FR1374096A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1348733A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1340091A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1375673A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1321984A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1291471A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1406461A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1336135A (fr) | Procédé de fabrication d'un dispositif photosensible | |
FR1377271A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1338202A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1277290A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1286808A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1277874A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1405805A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1334643A (fr) | Procédé de fabrication d'un dispositif semi-conducteur |