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FR1170225A - Redresseur double-alternance - Google Patents

Redresseur double-alternance

Info

Publication number
FR1170225A
FR1170225A FR1170225DA FR1170225A FR 1170225 A FR1170225 A FR 1170225A FR 1170225D A FR1170225D A FR 1170225DA FR 1170225 A FR1170225 A FR 1170225A
Authority
FR
France
Prior art keywords
full
wave rectifier
rectifier
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB35782/56A external-priority patent/GB812739A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of FR1170225A publication Critical patent/FR1170225A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/909Macrocell arrays, e.g. gate arrays with variable size or configuration of cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
FR1170225D 1955-07-27 1956-12-05 Redresseur double-alternance Expired FR1170225A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US524744A US2847623A (en) 1955-07-27 1955-07-27 Full wave rectifier structure and method of preparing same
GB35782/56A GB812739A (en) 1955-07-27 1956-11-22 Full wave rectifier structure and method of preparing same
DET13157A DE1098104B (de) 1955-07-27 1957-01-25 Verfahren zur Herstellung eines Vollweggleichrichters mit einem Paar von Halbleiterelementen

Publications (1)

Publication Number Publication Date
FR1170225A true FR1170225A (fr) 1959-01-12

Family

ID=27213037

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1170225D Expired FR1170225A (fr) 1955-07-27 1956-12-05 Redresseur double-alternance

Country Status (4)

Country Link
US (1) US2847623A (fr)
CH (1) CH352408A (fr)
DE (1) DE1098104B (fr)
FR (1) FR1170225A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3142791A (en) * 1955-12-07 1964-07-28 Motorola Inc Transistor and housing assembly
US3060553A (en) * 1955-12-07 1962-10-30 Motorola Inc Method for making semiconductor device
FR1192082A (fr) * 1957-03-20 1959-10-23 Bosch Gmbh Robert Semi-conducteur de puissance
US2983987A (en) * 1958-06-30 1961-05-16 Western Electric Co Method of forming articles
DE1126513B (de) * 1958-08-19 1962-03-29 Intermetall Verfahren zur Bearbeitung von Halbleiteranordnungen
US2995475A (en) * 1958-11-04 1961-08-08 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
DE1246888C2 (de) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg Verfahren zum herstellen von gleichrichteranordnungen in brueckenschaltung fuer kleine stromstaerken
DE1279850B (de) * 1961-09-06 1968-10-10 Siemens Ag Gleichrichteranordnung mit mindestens vier in Bruecke geschalteten Halbleitergleichrichtern
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture
US3287794A (en) * 1962-03-23 1966-11-29 American Radiator & Standard Method of soldering semiconductor discs
US3333163A (en) * 1965-02-15 1967-07-25 Int Rectifier Corp Rectifier assembly with interconnecting bus-bar supports
DE1539671A1 (de) * 1965-12-30 1969-12-18 Asea Ab Thyristorventil
US4319265A (en) * 1979-12-06 1982-03-09 The United States Of America As Represented By The Secretary Of The Army Monolithically interconnected series-parallel avalanche diodes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
DE851228C (de) * 1950-12-08 1952-10-02 Schaub Appbau Ges M B H G Gefasster Gleichrichter
US2757323A (en) * 1952-02-07 1956-07-31 Gen Electric Full wave asymmetrical semi-conductor devices
US2804581A (en) * 1953-10-05 1957-08-27 Sarkes Tarzian Semiconductor device and method of manufacture thereof
AT187557B (de) * 1954-03-05 1956-11-10 Western Electric Co Gleichrichterelement mit einem einkristalligen Siliziumkörper

Also Published As

Publication number Publication date
US2847623A (en) 1958-08-12
CH352408A (de) 1961-02-28
DE1098104B (de) 1961-01-26

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