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FR1130712A - Procédé de fabrication de semi-conducteurs - Google Patents

Procédé de fabrication de semi-conducteurs

Info

Publication number
FR1130712A
FR1130712A FR1130712DA FR1130712A FR 1130712 A FR1130712 A FR 1130712A FR 1130712D A FR1130712D A FR 1130712DA FR 1130712 A FR1130712 A FR 1130712A
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1130712A publication Critical patent/FR1130712A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1130712D 1954-04-28 1955-04-26 Procédé de fabrication de semi-conducteurs Expired FR1130712A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US426270A US2842467A (en) 1954-04-28 1954-04-28 Method of growing semi-conductors

Publications (1)

Publication Number Publication Date
FR1130712A true FR1130712A (fr) 1957-02-11

Family

ID=23690082

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1130712D Expired FR1130712A (fr) 1954-04-28 1955-04-26 Procédé de fabrication de semi-conducteurs

Country Status (3)

Country Link
US (1) US2842467A (fr)
FR (1) FR1130712A (fr)
GB (1) GB779383A (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2961475A (en) * 1957-05-29 1960-11-22 Rca Corp Solid-state charge carrier valve
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
NL255530A (fr) * 1959-09-11
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3346344A (en) * 1965-07-12 1967-10-10 Bell Telephone Labor Inc Growth of lithium niobate crystals
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
US4186045A (en) * 1976-08-26 1980-01-29 Massachusetts Institute Of Technology Method of epitaxial growth employing electromigration
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4389274A (en) * 1981-03-23 1983-06-21 The United States Of America As Represented By The Secretary Of The Navy Electrochemical deoxygenation for liquid phase epitaxial growth
JPH026383A (ja) * 1988-06-24 1990-01-10 Fujitsu Ltd 半導体結晶成長装置
JP3185321B2 (ja) * 1991-08-03 2001-07-09 ソニー株式会社 ＫＴｉＯＰＯ４ 単結晶の製造方法
JP3132094B2 (ja) * 1991-10-22 2001-02-05 日立金属株式会社 単結晶の製造方法および単結晶製造装置
JPH0930889A (ja) * 1995-07-18 1997-02-04 Komatsu Electron Metals Co Ltd 半導体単結晶の引上装置
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US6228165B1 (en) * 1999-07-28 2001-05-08 Seh America, Inc. Method of manufacturing crystal of silicon using an electric potential

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE471046A (fr) * 1944-12-14
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
BE500569A (fr) * 1950-01-13
US2651831A (en) * 1950-07-24 1953-09-15 Bell Telephone Labor Inc Semiconductor translating device
US2664486A (en) * 1951-06-15 1953-12-29 Northern Electric Co Thermistor and method of heat-treating it
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
US2711379A (en) * 1952-08-04 1955-06-21 Rothstein Jerome Method of controlling the concentration of impurities in semi-conducting materials

Also Published As

Publication number Publication date
US2842467A (en) 1958-07-08
GB779383A (en) 1957-07-17

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