FI95150B - Höyrypäällystyslaite - Google Patents

Höyrypäällystyslaite

Info

Publication number: FI95150B
Authority: FI; Finland
Prior art keywords: ångbeläggningsanordning
Prior art date: 1989-11-02

Application number

FI905349A

Other languages

English (en)

Swedish (sv)

Other versions

FI95150C (fi

FI905349A0 (fi

Inventor

Akiyoshi Mikami

Takashi Ogura

Kousuke Terada

Masaru Yoshida

Takuo Yamashita

Koichi Tanaka

Katsushi Okibayashi

Shigeo Nakajima

Hiroaki Nakaya

Kouji Taniguchi

Original Assignee

Sharp Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-11-02

Filing date

1990-10-30

Publication date

1995-09-15

1990-10-30 Application filed by Sharp Kk filed Critical Sharp Kk

1990-10-30 Publication of FI905349A0 publication Critical patent/FI905349A0/fi

1995-09-15 Publication of FI95150B publication Critical patent/FI95150B/fi

1995-12-27 Application granted granted Critical

1995-12-27 Publication of FI95150C publication Critical patent/FI95150C/fi

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

Chemical & Material Sciences (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Electroluminescent Light Sources (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

FI905349A 1989-11-02 1990-10-30 Höyrypäällystyslaite FI95150C (fi)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP1286454A JPH0818902B2 (ja)	1989-11-02	1989-11-02	気相成長装置
JP28645489		1989-11-02

Publications (3)

Publication Number	Publication Date
FI905349A0 FI905349A0 (fi)	1990-10-30
FI95150B true FI95150B (fi)	1995-09-15
FI95150C FI95150C (fi)	1995-12-27

Family

ID=17704602

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FI905349A FI95150C (fi)	1989-11-02	1990-10-30	Höyrypäällystyslaite

Country Status (5)

Country	Link
US (1)	US5334250A (fi)
EP (1)	EP0426494B1 (fi)
JP (1)	JPH0818902B2 (fi)
DE (1)	DE69017354T2 (fi)
FI (1)	FI95150C (fi)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6337102B1 (en) *	1997-11-17	2002-01-08	The Trustees Of Princeton University	Low pressure vapor phase deposition of organic thin films
US7670435B2 (en) *	2001-03-30	2010-03-02	Technologies And Devices International, Inc.	Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
KR20030002070A (ko) *	2001-06-30	2003-01-08	삼성전자 주식회사	원심력을 이용한 비점착 웨이퍼 건조방법 및 장치
US7501023B2 (en) *	2001-07-06	2009-03-10	Technologies And Devices, International, Inc.	Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6936357B2 (en) *	2001-07-06	2005-08-30	Technologies And Devices International, Inc.	Bulk GaN and ALGaN single crystals
US20060011135A1 (en) *	2001-07-06	2006-01-19	Dmitriev Vladimir A	HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US20070032046A1 (en) *	2001-07-06	2007-02-08	Dmitriev Vladimir A	Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6613143B1 (en) *	2001-07-06	2003-09-02	Technologies And Devices International, Inc.	Method for fabricating bulk GaN single crystals
JP4714422B2 (ja) *	2003-04-05	2011-06-29	ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー．	ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060065622A1 (en) *	2004-09-27	2006-03-30	Floyd Philip D	Method and system for xenon fluoride etching with enhanced efficiency
KR100792396B1 (ko) *	2005-10-11	2008-01-08	주식회사 유진테크	파티션 구조형 가열유닛과 이를 이용한 히팅장치
US8647435B1 (en)	2006-10-11	2014-02-11	Ostendo Technologies, Inc.	HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
KR20090125087A (ko) *	2007-02-20	2009-12-03	퀄컴 엠이엠스 테크놀로지스, 인크.	마이크로전자기계 시스템〔ｍｅｍｓ〕의 에칭장치 및 에칭 방법
US7719752B2 (en)	2007-05-11	2010-05-18	Qualcomm Mems Technologies, Inc.	MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en)	2007-06-22	2009-08-04	Qualcomm Mems Technologies, Inc.	Methods of making a MEMS device by monitoring a process parameter
WO2009015231A1 (en)	2007-07-25	2009-01-29	Qualcomm Mems Technologies, Inc.	Mems display devices and methods of fabricating the same
US8023191B2 (en) *	2008-05-07	2011-09-20	Qualcomm Mems Technologies, Inc.	Printable static interferometric images
US9343273B2 (en) *	2008-09-25	2016-05-17	Seagate Technology Llc	Substrate holders for uniform reactive sputtering
US20120251428A1 (en) *	2010-03-04	2012-10-04	Satoru Morioka	Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal
US8659816B2 (en)	2011-04-25	2014-02-25	Qualcomm Mems Technologies, Inc.	Mechanical layer and methods of making the same
JP6241903B2 (ja) *	2014-03-11	2017-12-06	株式会社Ｊｏｌｅｄ	蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法
JP6358446B2 (ja) *	2014-03-11	2018-07-18	株式会社Ｊｏｌｅｄ	蒸着装置及びその制御方法、蒸着装置を用いた蒸着方法、及びデバイスの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3098763A (en) *	1961-05-29	1963-07-23	Raytheon Co	Chemical reactor
US3310425A (en) *	1963-06-28	1967-03-21	Rca Corp	Method of depositing epitaxial layers of gallium arsenide
US3424629A (en) *	1965-12-13	1969-01-28	Ibm	High capacity epitaxial apparatus and method
US3858548A (en) *	1972-08-16	1975-01-07	Corning Glass Works	Vapor transport film deposition apparatus
JPS544566A (en) *	1977-06-13	1979-01-13	Nec Corp	Vapor phase growth method of semiconductor
JPS5931985B2 (ja) *	1977-11-14	1984-08-06	富士通株式会社	マグネスピネルの気相成長法
DD206687A3 (de) *	1981-07-28	1984-02-01	Mikroelektronik Zt Forsch Tech	Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
US4487640A (en) *	1983-02-22	1984-12-11	The United States Of America As Represented By The Secretary Of The Air Force	Method for the preparation of epitaxial films of mercury cadmium telluride
JPS59207622A (ja) *	1983-05-11	1984-11-24	Furukawa Electric Co Ltd:The	半導体薄膜気相成長装置
JPS6065526A (ja) *	1983-09-20	1985-04-15	Nec Corp	多元混晶３−５族化合物半導体成長方法及び装置
JPS60215594A (ja) *	1984-04-06	1985-10-28	Fujitsu Ltd	気相成長装置
JPS60253212A (ja) *	1984-05-30	1985-12-13	Toshiba Mach Co Ltd	気相成長装置
JPS61101021A (ja) *	1984-10-24	1986-05-19	Hitachi Ltd	膜形成装置
JPH07105345B2 (ja) *	1985-08-08	1995-11-13	日電アネルバ株式会社	基体処理装置
JPS6291496A (ja) *	1985-10-15	1987-04-25	Nec Corp	気相成長装置用反応管
JPH0691020B2 (ja) *	1986-02-14	1994-11-14	日本電信電話株式会社	気相成長方法および装置
JPS6335776A (ja) *	1986-07-30	1988-02-16	Matsushita Electronics Corp	気相化学蒸着装置
US4886412A (en) *	1986-10-28	1989-12-12	Tetron, Inc.	Method and system for loading wafers
JPH01108744A (ja) *	1987-10-22	1989-04-26	Oki Electric Ind Co Ltd	半導体製造装置
US4854266A (en) *	1987-11-02	1989-08-08	Btu Engineering Corporation	Cross-flow diffusion furnace
JPH0760738B2 (ja) *	1988-05-13	1995-06-28	シャープ株式会社	エレクトロルミネッセンス発光膜の製造方法

1989
- 1989-11-02 JP JP1286454A patent/JPH0818902B2/ja not_active Expired - Fee Related
1990
- 1990-10-30 FI FI905349A patent/FI95150C/fi not_active IP Right Cessation
- 1990-11-02 EP EP90312034A patent/EP0426494B1/en not_active Expired - Lifetime
- 1990-11-02 DE DE69017354T patent/DE69017354T2/de not_active Expired - Fee Related
1993
- 1993-02-17 US US08/022,742 patent/US5334250A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH0818902B2 (ja)	1996-02-28
US5334250A (en)	1994-08-02
EP0426494A1 (en)	1991-05-08
FI95150C (fi)	1995-12-27
EP0426494B1 (en)	1995-03-01
JPH03150293A (ja)	1991-06-26
DE69017354D1 (de)	1995-04-06
DE69017354T2 (de)	1995-09-28
FI905349A0 (fi)	1990-10-30

Publication	Publication Date	Title
DE69033697D1 (de)	2001-03-08	Mykonematizide
BR9002634A (pt)	1991-08-20	Poli-alfa-olefina
FI95150B (fi)	1995-09-15	Höyrypäällystyslaite
DE69028192D1 (de)	1996-09-26	Ablenkjoch
BR9000014A (pt)	1990-10-09	Classificaodr
DE69027258D1 (de)	1996-07-11	Phenacylpyridiniothiocephalosporine
DD294367A5 (de)	1991-09-26	Farbbildroehre
BR9001818A (pt)	1991-11-12	Girotrom quase-otico
ATA149789A (de)	1992-04-15	Schienenrad
DE59010414D1 (de)	1996-08-14	Fluorphenylpyridine
BR9006503A (pt)	1991-10-01	Copolimero agrilamidios
DD284561A5 (de)	1990-11-14	Chiptraeger
BR8900751A (pt)	1990-06-19	Operculo anti-aglutinante
SE8902913D0 (sv)	1989-09-05	Bandageskaerare
BR6901774U (pt)	1991-07-09	Negatoscopio unimaden
BR6901802U (pt)	1991-07-09	Picador-triturador
BR6901807U (pt)	1991-07-09	Fulao
BR6901912U (pt)	1991-07-09	Fiodentalizador
BR6902005U (pt)	1991-07-09	Vira-pista
BR6902208U (pt)	1991-07-16	Set-light
BR6902267U (pt)	1991-07-16	Grosalixa
BR6902498U (pt)	1991-07-23	Varal giratorio
BR8900468A (pt)	1990-05-29	Base-arquivo
BR8902801A (pt)	1990-12-26	Vesete
ATA152989A (de)	1991-04-15	Skistock

Legal Events

Date	Code	Title	Description
1990-10-30	FG	Patent granted	Owner name: SHARP KABUSHIKI KAISHA
1995-08-16	BB	Publication of examined application
2004-08-31	MM	Patent lapsed	Owner name: SHARP KABUSHIKI KAISHA