ES8607761A1 - Procedimiento para depositar un material solido a partir de una fase gaseosa sobre un substrato. - Google Patents
Procedimiento para depositar un material solido a partir de una fase gaseosa sobre un substrato.Info
- Publication number
- ES8607761A1 ES8607761A1 ES540894A ES540894A ES8607761A1 ES 8607761 A1 ES8607761 A1 ES 8607761A1 ES 540894 A ES540894 A ES 540894A ES 540894 A ES540894 A ES 540894A ES 8607761 A1 ES8607761 A1 ES 8607761A1
- Authority
- ES
- Spain
- Prior art keywords
- chemical vapor
- vapor deposition
- deposition apparatus
- reaction chamber
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/80—Material per se process of making same
- Y10S505/815—Process of making per se
- Y10S505/818—Coating
- Y10S505/819—Vapor deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/826—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Surgical Instruments (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Infusion, Injection, And Reservoir Apparatuses (AREA)
Abstract
PROCEDIMIENTO PARA LA DEPOSICION QUIMICA DE VAPOR DE RECUBRIMIENTOS NO CONTAMINADOS, ALTAMENTE UNIFORMES, DE ELEMENTOS DE COMPUESTOS SELECCIONADOS, SOBRE SUSTRATOS. CONSISTE EN PONER EN CONTACTO EL SUSTRATO CON GASES REACTIVOS QUE FLUYEN EN DIRECCION PARALELA A LA SUPERFICIE EN LA ZONA DE REACCION DE TEMPERATURA CONTROLADA, SIENDO LA DIFERENCIA DE TEMPERATURA A TRAVES DE LA ZONA DE REACCION INFERIOR A DOS GRADOS. LA TEMPERATURA CONTROLADA EN LA CAMARA DE REACCION SE OBTIENE POR CALENTAMIENTO CON RADIACION DE FUENTES DE CALEFACCION RADIANTE, QUE RODEAN SUSTANCIALMENTE LA CAMARA DE REACCION, ESTANDO LAS PAREDES DE DICHA CAMARA DE REACCION FORMADAS POR UN MATERIAL SUSTANCIALMENTE TRANSPARENTE A LA RADIACION. DE APLICACION EN RECUBRIMIENTOS PROTECTORES SOBRE HERRAMIENTAS CORTANTES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/412,237 US4545327A (en) | 1982-08-27 | 1982-08-27 | Chemical vapor deposition apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8607761A1 true ES8607761A1 (es) | 1986-06-01 |
ES540894A0 ES540894A0 (es) | 1986-06-01 |
Family
ID=23632185
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES525174A Expired ES8600086A1 (es) | 1982-08-27 | 1983-08-26 | Un aparato y procedimiento para la deposicion quimica de vapor |
ES540894A Expired ES8607761A1 (es) | 1982-08-27 | 1985-03-01 | Procedimiento para depositar un material solido a partir de una fase gaseosa sobre un substrato. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES525174A Expired ES8600086A1 (es) | 1982-08-27 | 1983-08-26 | Un aparato y procedimiento para la deposicion quimica de vapor |
Country Status (17)
Country | Link |
---|---|
US (1) | US4545327A (es) |
EP (1) | EP0104764B1 (es) |
JP (1) | JPS5959878A (es) |
KR (1) | KR880000472B1 (es) |
AT (1) | ATE47894T1 (es) |
AU (1) | AU538152B2 (es) |
BR (1) | BR8304635A (es) |
CA (1) | CA1196777A (es) |
DE (1) | DE3380823D1 (es) |
DK (1) | DK383683A (es) |
ES (2) | ES8600086A1 (es) |
IL (1) | IL69170A (es) |
IN (1) | IN159736B (es) |
NO (1) | NO832366L (es) |
PT (1) | PT77245B (es) |
YU (1) | YU175883A (es) |
ZA (1) | ZA835184B (es) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097622A (ja) * | 1983-11-01 | 1985-05-31 | Toshiba Mach Co Ltd | エピタキシヤル装置 |
US4539933A (en) * | 1983-08-31 | 1985-09-10 | Anicon, Inc. | Chemical vapor deposition apparatus |
DE3502592A1 (de) * | 1985-01-26 | 1986-07-31 | Rotring-Werke Riepe Kg, 2000 Hamburg | Roehrchenschreibgeraet |
CA1251100A (en) * | 1985-05-17 | 1989-03-14 | Richard Cloutier | Chemical vapor deposition |
FR2589168B1 (fr) * | 1985-10-25 | 1992-07-17 | Solems Sa | Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma |
DE3539981C1 (de) * | 1985-11-11 | 1987-06-11 | Telog Systems Gmbh | Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien |
US4965515A (en) * | 1986-10-15 | 1990-10-23 | Tokyo Electron Limited | Apparatus and method of testing a semiconductor wafer |
DE8704734U1 (de) * | 1987-03-31 | 1987-05-14 | plasma-electronic GmbH + Co, 7024 Filderstadt | Vakuumkammer zur Behandlung der Oberflächen von insbesondere Substraten od.dgl. mittels ionisierter Gase |
US4975561A (en) * | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
FR2618799B1 (fr) * | 1987-07-27 | 1989-12-29 | Inst Nat Rech Chimique | Reacteur de depot en phase vapeur |
EP0307608B1 (de) * | 1987-09-16 | 1992-05-13 | Siemens Aktiengesellschaft | Anordnung zur Durchführung eines Ausheilprozesses an einer Halbleiterscheibe und Verfahren zum Ausheilen einer Halbleiterscheibe |
US5169478A (en) * | 1987-10-08 | 1992-12-08 | Friendtech Laboratory, Ltd. | Apparatus for manufacturing semiconductor devices |
US4854266A (en) * | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
KR890008922A (ko) * | 1987-11-21 | 1989-07-13 | 후세 노보루 | 열처리 장치 |
US4914276A (en) * | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
KR0155545B1 (ko) * | 1988-06-27 | 1998-12-01 | 고다까 토시오 | 기판의 열처리 장치 |
KR0152260B1 (ko) * | 1988-07-08 | 1998-12-15 | 고다까 토시오 | 프로우브 장치 |
US4931306A (en) * | 1988-11-25 | 1990-06-05 | Vapor Technologies Inc. | High penetration deposition process and apparatus |
US5059770A (en) * | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5071670A (en) * | 1990-06-11 | 1991-12-10 | Kelly Michael A | Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means |
US5179677A (en) * | 1990-08-16 | 1993-01-12 | Applied Materials, Inc. | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
US5085887A (en) * | 1990-09-07 | 1992-02-04 | Applied Materials, Inc. | Wafer reactor vessel window with pressure-thermal compensation |
US5320680A (en) * | 1991-04-25 | 1994-06-14 | Silicon Valley Group, Inc. | Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow |
US5461214A (en) * | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
AU8011394A (en) * | 1993-10-13 | 1995-05-04 | Materials Research Corporation | Vacuum seal of heating window to housing in wafer heat processing machine |
US5575856A (en) * | 1994-05-11 | 1996-11-19 | Sony Corporation | Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
WO1997008356A2 (en) * | 1995-08-18 | 1997-03-06 | The Regents Of The University Of California | Modified metalorganic chemical vapor deposition of group iii-v thin layers |
US5782980A (en) * | 1996-05-14 | 1998-07-21 | Advanced Micro Devices, Inc. | Low pressure chemical vapor deposition apparatus including a process gas heating subsystem |
US6024393A (en) | 1996-11-04 | 2000-02-15 | Applied Materials, Inc. | Robot blade for handling of semiconductor substrate |
US5960158A (en) * | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US6780464B2 (en) * | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
US6771895B2 (en) | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
US6383330B1 (en) | 1999-09-10 | 2002-05-07 | Asm America, Inc. | Quartz wafer processing chamber |
AU2002239386A1 (en) * | 2000-12-12 | 2002-06-24 | Tokyo Electron Limited | Rapid thermal processing lamp and method for manufacturing the same |
US7378127B2 (en) * | 2001-03-13 | 2008-05-27 | Micron Technology, Inc. | Chemical vapor deposition methods |
CN1405863A (zh) * | 2001-08-20 | 2003-03-26 | Asml美国公司 | 在反应室中隔离密封件的方法和装置 |
KR100431657B1 (ko) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
US7390366B2 (en) * | 2001-11-05 | 2008-06-24 | Jusung Engineering Co., Ltd. | Apparatus for chemical vapor deposition |
JP3984820B2 (ja) * | 2001-11-16 | 2007-10-03 | 株式会社神戸製鋼所 | 縦型減圧cvd装置 |
KR100453014B1 (ko) * | 2001-12-26 | 2004-10-14 | 주성엔지니어링(주) | Cvd 장치 |
JP2003213421A (ja) * | 2002-01-21 | 2003-07-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US7229666B2 (en) * | 2002-01-22 | 2007-06-12 | Micron Technology, Inc. | Chemical vapor deposition method |
US6787185B2 (en) * | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
JP4157718B2 (ja) * | 2002-04-22 | 2008-10-01 | キヤノンアネルバ株式会社 | 窒化シリコン膜作製方法及び窒化シリコン膜作製装置 |
US7468104B2 (en) * | 2002-05-17 | 2008-12-23 | Micron Technology, Inc. | Chemical vapor deposition apparatus and deposition method |
US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
US6946033B2 (en) * | 2002-09-16 | 2005-09-20 | Applied Materials Inc. | Heated gas distribution plate for a processing chamber |
US20040052969A1 (en) * | 2002-09-16 | 2004-03-18 | Applied Materials, Inc. | Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate |
KR100481874B1 (ko) * | 2003-02-05 | 2005-04-11 | 삼성전자주식회사 | 집적회로 제조에 사용되는 확산로 및 확산로의 냉각방법 |
DE10320597A1 (de) * | 2003-04-30 | 2004-12-02 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist |
US20040244949A1 (en) * | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | Temperature controlled shield ring |
US20050098107A1 (en) * | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
US7169233B2 (en) | 2003-11-21 | 2007-01-30 | Asm America, Inc. | Reactor chamber |
US7615061B2 (en) | 2006-02-28 | 2009-11-10 | Arthrocare Corporation | Bone anchor suture-loading system, method and apparatus |
KR20090110863A (ko) | 2007-02-01 | 2009-10-22 | 윌라드 앤드 켈시 솔라 그룹, 엘엘씨 | 유리 시트 반도체 코팅을 위한 시스템과 방법 |
US20090191031A1 (en) * | 2008-01-28 | 2009-07-30 | Willard & Kelsey Solar Group, Llc | System and method for cooling semiconductor coated hot glass sheets |
US9169554B2 (en) * | 2008-05-30 | 2015-10-27 | Alta Devices, Inc. | Wafer carrier track |
JP5043776B2 (ja) * | 2008-08-08 | 2012-10-10 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
CN102422392B (zh) | 2009-03-16 | 2016-08-31 | 奥塔装置公司 | 加热灯系统及其方法 |
US8338210B2 (en) | 2010-06-14 | 2012-12-25 | Asm International N.V. | Method for processing solar cell substrates |
JP5541274B2 (ja) * | 2011-12-28 | 2014-07-09 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
US20130196053A1 (en) * | 2012-01-10 | 2013-08-01 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Stat | Flow cell design for uniform residence time fluid flow |
US10100409B2 (en) * | 2015-02-11 | 2018-10-16 | United Technologies Corporation | Isothermal warm wall CVD reactor |
DE102015220127A1 (de) * | 2015-10-15 | 2017-04-20 | Wacker Chemie Ag | Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1245334B (de) * | 1962-08-30 | 1967-07-27 | Siemens Ag | Vorrichtung zur Herstellung von Halbleitereinkristallen durch Abscheiden aus der Gasphase |
DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
DE1929422B2 (de) * | 1969-06-10 | 1974-08-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial |
GB1331912A (en) * | 1971-03-12 | 1973-09-26 | Unisearch Ltd | Furnaces for production of planar transistors and integrated circuits |
FR2134220A1 (fr) * | 1971-04-27 | 1972-12-08 | Snecma | Procede en phase vapeur pour le recouvrement de surfaces au moyen de derives du titane |
US3830194A (en) * | 1972-09-28 | 1974-08-20 | Applied Materials Tech | Susceptor support structure and docking assembly |
GB1452076A (en) * | 1972-11-29 | 1976-10-06 | Applied Materials Inc | Process and apparatus for preparing semiconductor wafers without crystallographic slip |
US3913738A (en) * | 1973-05-03 | 1975-10-21 | Illinois Tool Works | Multi container package and carrier |
US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
JPS5337186A (en) * | 1976-09-17 | 1978-04-06 | Hitachi Ltd | Chemical gas phase accumulating method |
JPS5821025B2 (ja) * | 1976-10-20 | 1983-04-26 | 松下電器産業株式会社 | 気相化学蒸着装置 |
US4348580A (en) * | 1980-05-07 | 1982-09-07 | Tylan Corporation | Energy efficient furnace with movable end wall |
US4309240A (en) * | 1980-05-16 | 1982-01-05 | Advanced Crystal Sciences, Inc. | Process for chemical vapor deposition of films on silicon wafers |
GB2089840B (en) * | 1980-12-20 | 1983-12-14 | Cambridge Instr Ltd | Chemical vapour deposition apparatus incorporating radiant heat source for substrate |
-
1982
- 1982-08-27 US US06/412,237 patent/US4545327A/en not_active Expired - Lifetime
-
1983
- 1983-06-29 NO NO832366A patent/NO832366L/no unknown
- 1983-07-06 IL IL69170A patent/IL69170A/xx not_active IP Right Cessation
- 1983-07-13 IN IN872/CAL/83A patent/IN159736B/en unknown
- 1983-07-15 ZA ZA835184A patent/ZA835184B/xx unknown
- 1983-08-18 KR KR1019830003864A patent/KR880000472B1/ko not_active IP Right Cessation
- 1983-08-22 DK DK383683A patent/DK383683A/da not_active Application Discontinuation
- 1983-08-23 CA CA000435134A patent/CA1196777A/en not_active Expired
- 1983-08-24 EP EP83304889A patent/EP0104764B1/en not_active Expired
- 1983-08-24 PT PT77245A patent/PT77245B/pt unknown
- 1983-08-24 DE DE8383304889T patent/DE3380823D1/de not_active Expired
- 1983-08-24 AT AT83304889T patent/ATE47894T1/de not_active IP Right Cessation
- 1983-08-26 YU YU01758/83A patent/YU175883A/xx unknown
- 1983-08-26 BR BR8304635A patent/BR8304635A/pt unknown
- 1983-08-26 AU AU18480/83A patent/AU538152B2/en not_active Ceased
- 1983-08-26 ES ES525174A patent/ES8600086A1/es not_active Expired
- 1983-08-26 JP JP58155171A patent/JPS5959878A/ja active Granted
-
1985
- 1985-03-01 ES ES540894A patent/ES8607761A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
YU175883A (en) | 1986-04-30 |
US4545327A (en) | 1985-10-08 |
KR840005751A (ko) | 1984-11-15 |
DE3380823D1 (en) | 1989-12-14 |
AU1848083A (en) | 1984-03-01 |
BR8304635A (pt) | 1984-04-10 |
JPS6256232B2 (es) | 1987-11-25 |
CA1196777A (en) | 1985-11-19 |
KR880000472B1 (ko) | 1988-04-07 |
IL69170A (en) | 1987-03-31 |
ZA835184B (en) | 1984-03-28 |
ES525174A0 (es) | 1985-10-01 |
EP0104764A2 (en) | 1984-04-04 |
IL69170A0 (en) | 1983-11-30 |
ES540894A0 (es) | 1986-06-01 |
JPS5959878A (ja) | 1984-04-05 |
IN159736B (es) | 1987-06-06 |
NO832366L (no) | 1984-02-28 |
PT77245A (en) | 1983-09-01 |
EP0104764A3 (en) | 1984-05-16 |
EP0104764B1 (en) | 1989-11-08 |
DK383683A (da) | 1984-02-28 |
AU538152B2 (en) | 1984-08-02 |
DK383683D0 (da) | 1983-08-22 |
ES8600086A1 (es) | 1985-10-01 |
ATE47894T1 (de) | 1989-11-15 |
PT77245B (en) | 1986-02-12 |
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