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ES8407249A1 - Perfeccionamientos introducidos en una camara aislada de deposicion por descarga incandescente - Google Patents

Perfeccionamientos introducidos en una camara aislada de deposicion por descarga incandescente

Info

Publication number
ES8407249A1
ES8407249A1 ES526769A ES526769A ES8407249A1 ES 8407249 A1 ES8407249 A1 ES 8407249A1 ES 526769 A ES526769 A ES 526769A ES 526769 A ES526769 A ES 526769A ES 8407249 A1 ES8407249 A1 ES 8407249A1
Authority
ES
Spain
Prior art keywords
glow discharge
process gases
deposition apparatus
substrate
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES526769A
Other languages
English (en)
Other versions
ES526769A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES526769A0 publication Critical patent/ES526769A0/es
Publication of ES8407249A1 publication Critical patent/ES8407249A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

SISTEMA PARA INTRODUCIR, CONFINAR Y EVACUAR GASES DE ELABORACION, EN UN SITIO ADYACENTE A LA REGION DE CATODO DE UN APARATO DE DEPOSITO POR DESCARGA DE EFLUVIO, ESTANDO DICHO APARATO ADAPTADO PARA DEPOSITAR CUANDO MENOS UNA CAPA DE UN MATERIAL SEMICONDUCTOR SOBRE UN SUSTRATO.CONSTA DE UNA PRIMERA CAMARA DE DEPOSITO (28) EN LA QUE SE DEPOSITA UNA CAPA SEMICONDUCTORA DEL TIPO P SOBRE UN SUSTRATO (11); DE UNA SEGUNDA CAMARA DE DEPOSITO (30) EN LA QUE SE DEPOSITA UNA CAPA SEMICONDUCTORA AMORFA SOBRE LA CAPA P; Y DE UNA TERCERA CAMARA DE DEPOSITO (32) EN LA QUE UNACAPA SEMICONDUCTORA DE TIPO N SE DEPOSITA SOBRE LA CAPA SEMICONDUCTORA AMORFA.
ES526769A 1982-10-27 1983-10-26 Perfeccionamientos introducidos en una camara aislada de deposicion por descarga incandescente Expired ES8407249A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/437,075 US4462333A (en) 1982-10-27 1982-10-27 Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus

Publications (2)

Publication Number Publication Date
ES526769A0 ES526769A0 (es) 1984-08-16
ES8407249A1 true ES8407249A1 (es) 1984-08-16

Family

ID=23734960

Family Applications (1)

Application Number Title Priority Date Filing Date
ES526769A Expired ES8407249A1 (es) 1982-10-27 1983-10-26 Perfeccionamientos introducidos en una camara aislada de deposicion por descarga incandescente

Country Status (10)

Country Link
US (1) US4462333A (es)
EP (1) EP0107510A3 (es)
JP (1) JPH0642451B2 (es)
KR (1) KR840006565A (es)
AU (1) AU2061083A (es)
BR (1) BR8305910A (es)
CA (1) CA1212356A (es)
ES (1) ES8407249A1 (es)
IN (1) IN160670B (es)
MX (1) MX159162A (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4504526A (en) * 1983-09-26 1985-03-12 Libbey-Owens-Ford Company Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate
JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマｃｖｄ装置
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
CN86104429A (zh) * 1985-07-05 1987-01-07 西屋电气公司 溅射镀膜设备的靶中阴极和接地屏蔽极的配置
DE4031770A1 (de) * 1990-10-06 1992-04-09 Leybold Ag Vorrichtung zur vermeidung von staubbildung
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
US6066826A (en) * 1998-03-16 2000-05-23 Yializis; Angelo Apparatus for plasma treatment of moving webs
JP4651072B2 (ja) 2001-05-31 2011-03-16 キヤノン株式会社 堆積膜形成方法、および堆積膜形成装置
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
EP1799879A1 (en) * 2004-09-14 2007-06-27 OptiSolar Inc. Plasma enhanced chemical vapor deposition apparatus and method
WO2006053128A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
US20060096536A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition apparatus
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
JP5931091B2 (ja) * 2012-01-16 2016-06-08 株式会社アルバック 成膜装置
TWI551725B (zh) * 2012-05-22 2016-10-01 隔板式沉積裝置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse
US4033287A (en) * 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
JPS5326442U (es) * 1976-08-12 1978-03-06
US4269137A (en) * 1979-03-19 1981-05-26 Xerox Corporation Pretreatment of substrates prior to thin film deposition
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
EP0060651B1 (en) * 1981-03-16 1986-07-30 Energy Conversion Devices, Inc. Apparatus including improved cathode for continuous deposition of amorphous material
US4369730A (en) * 1981-03-16 1983-01-25 Energy Conversion Devices, Inc. Cathode for generating a plasma

Also Published As

Publication number Publication date
MX159162A (es) 1989-04-26
JPS59121828A (ja) 1984-07-14
KR840006565A (ko) 1984-11-30
ES526769A0 (es) 1984-08-16
EP0107510A3 (en) 1986-01-29
JPH0642451B2 (ja) 1994-06-01
AU2061083A (en) 1984-05-03
BR8305910A (pt) 1984-06-05
EP0107510A2 (en) 1984-05-02
US4462333A (en) 1984-07-31
CA1212356A (en) 1986-10-07
IN160670B (es) 1987-07-25

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