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ES528415A0 - Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste. - Google Patents

Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste.

Info

Publication number
ES528415A0
ES528415A0 ES528415A ES528415A ES528415A0 ES 528415 A0 ES528415 A0 ES 528415A0 ES 528415 A ES528415 A ES 528415A ES 528415 A ES528415 A ES 528415A ES 528415 A0 ES528415 A0 ES 528415A0
Authority
ES
Spain
Prior art keywords
procedure
low cost
high purity
corresponding system
quality silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES528415A
Other languages
English (en)
Other versions
ES8602535A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SRI International Inc
Original Assignee
SRI International Inc
Stanford Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SRI International Inc, Stanford Research Institute filed Critical SRI International Inc
Publication of ES528415A0 publication Critical patent/ES528415A0/es
Publication of ES8602535A1 publication Critical patent/ES8602535A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
ES528415A 1982-12-27 1983-12-26 Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste. Expired ES8602535A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/453,734 US4590043A (en) 1982-12-27 1982-12-27 Apparatus for obtaining silicon from fluosilicic acid

Publications (2)

Publication Number Publication Date
ES528415A0 true ES528415A0 (es) 1985-12-01
ES8602535A1 ES8602535A1 (es) 1985-12-01

Family

ID=23801845

Family Applications (1)

Application Number Title Priority Date Filing Date
ES528415A Expired ES8602535A1 (es) 1982-12-27 1983-12-26 Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste.

Country Status (13)

Country Link
US (2) US4590043A (es)
EP (2) EP0424981A1 (es)
JP (1) JPS60500172A (es)
CA (2) CA1222124A (es)
CH (1) CH670624A5 (es)
DE (1) DE3390374T1 (es)
ES (1) ES8602535A1 (es)
GB (2) GB2142916B (es)
GR (1) GR79108B (es)
IT (1) IT1172392B (es)
NL (1) NL8320390A (es)
PT (1) PT77854B (es)
WO (1) WO1984002539A1 (es)

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ES2258216T3 (es) * 2002-01-18 2006-08-16 Power Avenue Procedimiento para la fabricacion de silicio.
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FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
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EP1811064A1 (fr) 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
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US20100111831A1 (en) * 2008-10-31 2010-05-06 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Compositions and methods for surface abrasion with frozen particles
US9050317B2 (en) * 2008-10-31 2015-06-09 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
US8603495B2 (en) * 2008-10-31 2013-12-10 The Invention Science Fund I, Llc Compositions and methods for biological remodeling with frozen particle compositions
US9060926B2 (en) * 2008-10-31 2015-06-23 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
US8551505B2 (en) * 2008-10-31 2013-10-08 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
US8545806B2 (en) 2008-10-31 2013-10-01 The Invention Science Fund I, Llc Compositions and methods for biological remodeling with frozen particle compositions
US20100111841A1 (en) * 2008-10-31 2010-05-06 Searete Llc Compositions and methods for surface abrasion with frozen particles
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US8731840B2 (en) * 2008-10-31 2014-05-20 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
US9056047B2 (en) 2008-10-31 2015-06-16 The Invention Science Fund I, Llc Compositions and methods for delivery of frozen particle adhesives
US8545855B2 (en) * 2008-10-31 2013-10-01 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US9050070B2 (en) * 2008-10-31 2015-06-09 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US8798933B2 (en) * 2008-10-31 2014-08-05 The Invention Science Fund I, Llc Frozen compositions and methods for piercing a substrate
US8725420B2 (en) * 2008-10-31 2014-05-13 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US9072799B2 (en) 2008-10-31 2015-07-07 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US8551506B2 (en) * 2008-10-31 2013-10-08 The Invention Science Fund I, Llc Compositions and methods for administering compartmentalized frozen particles
US20100111836A1 (en) * 2008-10-31 2010-05-06 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Compositions and methods for therapeutic delivery with frozen particles
US8793075B2 (en) * 2008-10-31 2014-07-29 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
US8731841B2 (en) * 2008-10-31 2014-05-20 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
US9060934B2 (en) * 2008-10-31 2015-06-23 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US9060931B2 (en) * 2008-10-31 2015-06-23 The Invention Science Fund I, Llc Compositions and methods for delivery of frozen particle adhesives
US8409376B2 (en) 2008-10-31 2013-04-02 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US8721583B2 (en) * 2008-10-31 2014-05-13 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US8762067B2 (en) 2008-10-31 2014-06-24 The Invention Science Fund I, Llc Methods and systems for ablation or abrasion with frozen particles and comparing tissue surface ablation or abrasion data to clinical outcome data
US8788211B2 (en) * 2008-10-31 2014-07-22 The Invention Science Fund I, Llc Method and system for comparing tissue ablation or abrasion data to data related to administration of a frozen particle composition
US8563012B2 (en) 2008-10-31 2013-10-22 The Invention Science Fund I, Llc Compositions and methods for administering compartmentalized frozen particles
US20100111857A1 (en) * 2008-10-31 2010-05-06 Boyden Edward S Compositions and methods for surface abrasion with frozen particles
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CN102317201B (zh) * 2008-12-17 2014-08-13 Memc电子材料有限公司 用于在流化床反应器中由氟硅酸盐生产四氟化硅的方法和体系
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Also Published As

Publication number Publication date
NL8320390A (nl) 1984-11-01
CH670624A5 (es) 1989-06-30
CA1222124A (en) 1987-05-26
PT77854B (en) 1986-03-25
GR79108B (es) 1984-10-02
ES8602535A1 (es) 1985-12-01
GB2142916A (en) 1985-01-30
GB2178420A (en) 1987-02-11
JPS60500172A (ja) 1985-02-07
DE3390374T1 (de) 1985-01-24
WO1984002539A1 (en) 1984-07-05
IT1172392B (it) 1987-06-18
EP0131586A1 (en) 1985-01-23
EP0131586B1 (en) 1991-07-31
PT77854A (en) 1984-01-01
CA1241895A (en) 1988-09-13
GB2142916B (en) 1987-03-18
US4753783A (en) 1988-06-28
EP0131586A4 (en) 1988-03-22
GB8417387D0 (en) 1984-08-08
GB8619455D0 (en) 1986-09-17
EP0424981A1 (en) 1991-05-02
IT8349586A0 (it) 1983-12-27
GB2178420B (en) 1987-12-23
US4590043A (en) 1986-05-20

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