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ES392672A1 - IMPROVEMENTS IN THE MANUFACTURE OF SEMI-CONDUCTOR PARTICLE DETECTORS OF NIP STRUCTURES. - Google Patents

IMPROVEMENTS IN THE MANUFACTURE OF SEMI-CONDUCTOR PARTICLE DETECTORS OF NIP STRUCTURES.

Info

Publication number
ES392672A1
ES392672A1 ES392672A ES392672A ES392672A1 ES 392672 A1 ES392672 A1 ES 392672A1 ES 392672 A ES392672 A ES 392672A ES 392672 A ES392672 A ES 392672A ES 392672 A1 ES392672 A1 ES 392672A1
Authority
ES
Spain
Prior art keywords
manufacture
semi
particle detectors
nip
conductor particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES392672A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of ES392672A1 publication Critical patent/ES392672A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Perfeccionamientos en la fabricación de detectores de partículas de semi-conductor de estructuras NIP, caracterizados porque se frota la zona N de un detector NIP difundido y migrado al litio clásico, porque se deposita por evaporación en vacío sobre la muestra IP restante una capa metálica únicamente sobre la zona intrínseca I, y porque se implanta iones litio, en dicha zona intrínseca a través de dicha capa metálica.Improvements in the manufacture of semiconductor particle detectors with NIP structures, characterized in that the N zone of a diffused and migrated NIP detector is rubbed onto classical lithium, because a metallic layer is deposited by vacuum evaporation on the remaining IP sample only on the intrinsic zone I, and because lithium ions are implanted in said intrinsic zone through said metallic layer.

ES392672A 1970-06-26 1971-06-26 IMPROVEMENTS IN THE MANUFACTURE OF SEMI-CONDUCTOR PARTICLE DETECTORS OF NIP STRUCTURES. Expired ES392672A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (en) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
ES392672A1 true ES392672A1 (en) 1975-04-16

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
ES392672A Expired ES392672A1 (en) 1970-06-26 1971-06-26 IMPROVEMENTS IN THE MANUFACTURE OF SEMI-CONDUCTOR PARTICLE DETECTORS OF NIP STRUCTURES.

Country Status (7)

Country Link
BE (1) BE768570A (en)
CH (1) CH546412A (en)
DE (1) DE2131755C3 (en)
ES (1) ES392672A1 (en)
FR (1) FR2094616A5 (en)
GB (1) GB1320834A (en)
IT (1) IT939723B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909564C2 (en) * 1979-03-12 1981-01-08 Geraetewerk Lahr Gmbh, 7630 Lahr Device for vibration reduction in a record player

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
FR1532346A (en) * 1967-04-12 1968-07-12 Centre Nat Rech Scient Improvements to nuclear radiation detectors, of the n-i-p diode type

Also Published As

Publication number Publication date
DE2131755C3 (en) 1975-06-12
DE2131755A1 (en) 1972-01-20
DE2131755B2 (en) 1974-10-17
FR2094616A5 (en) 1972-02-04
IT939723B (en) 1973-02-10
CH546412A (en) 1974-02-28
BE768570A (en) 1971-11-03
GB1320834A (en) 1973-06-20

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