ES364658A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number: ES364658A1
Authority: ES; Spain
Prior art keywords: diode; layer; conduction; layer diode; region
Prior art date: 1968-03-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

ES364658A

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CBS Corp

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1968-03-13

Filing date

1969-03-12

Publication date

1970-12-16

1969-03-12 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1970-12-16 Publication of ES364658A1 publication Critical patent/ES364658A1/es

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

Thyristors (AREA)
Electronic Switches (AREA)
Electrodes Of Semiconductors (AREA)
Element Separation (AREA)

ES364658A 1968-03-13 1969-03-12 Un dispositivo semiconductor. Expired ES364658A1 (es)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US71284268A	1968-03-13	1968-03-13

Publications (1)

Publication Number	Publication Date
ES364658A1 true ES364658A1 (es)	1970-12-16

Family

ID=24863786

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ES364658A Expired ES364658A1 (es)	1968-03-13	1969-03-12	Un dispositivo semiconductor.

Country Status (8)

Country	Link
US (1)	US3584270A (es)
BE (1)	BE729763A (es)
DE (1)	DE1912192A1 (es)
ES (1)	ES364658A1 (es)
FR (1)	FR2009809B1 (es)
GB (1)	GB1251088A (es)
IE (1)	IE32763B1 (es)
SE (1)	SE389428B (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3727116A (en) *	1970-05-05	1973-04-10	Rca Corp	Integral thyristor-rectifier device
GB1303337A (es) *	1970-10-06	1973-01-17
US3818248A (en) *	1971-05-24	1974-06-18	Westinghouse Electric Corp	Serially connected semiconductor switching devices selectively connected for predetermined voltage blocking and rapid switching
US3774054A (en) *	1971-08-09	1973-11-20	Westinghouse Electric Corp	Voltage variable solid state line type modulator
DE2214187C3 (de) *	1972-03-23	1978-05-03	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Thyristor
JPS5341954B2 (es) *	1972-06-10	1978-11-08
JPS4940887A (es) *	1972-08-25	1974-04-17
JPS49106289A (es) *	1973-02-09	1974-10-08
US3945028A (en) *	1973-04-26	1976-03-16	Westinghouse Electric Corporation	High speed, high power plasma thyristor circuit
FR2270676B1 (es) *	1974-02-22	1976-12-03	Thomson Csf
US4225874A (en) *	1978-03-09	1980-09-30	Rca Corporation	Semiconductor device having integrated diode
JPS5826834B2 (ja) *	1979-09-28	1983-06-06	株式会社日立製作所	半導体レ−ザ−装置
GB2256744A (en) *	1991-06-11	1992-12-16	Texas Instruments Ltd	A monolithic semiconductor component for transient voltage suppression
US5600160A (en) *	1993-04-14	1997-02-04	Hvistendahl; Douglas D.	Multichannel field effect device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2971139A (en) *	1959-06-16	1961-02-07	Fairchild Semiconductor	Semiconductor switching device
US3476993A (en) *	1959-09-08	1969-11-04	Gen Electric	Five layer and junction bridging terminal switching device
FR1280155A (fr) *	1960-12-06	1961-12-29	Fairchild Semiconductor	Dispositif de commutation à transistor
US3264492A (en) *	1963-08-06	1966-08-02	Int Rectifier Corp	Adjustable semiconductor punchthrough device having three junctions
CH437538A (de) *	1965-12-22	1967-06-15	Bbc Brown Boveri & Cie	Steuerbares Halbleiterelement

1968
- 1968-03-13 US US712842A patent/US3584270A/en not_active Expired - Lifetime
1969
- 1969-02-22 IE IE263/69A patent/IE32763B1/xx unknown
- 1969-02-25 GB GB1251088D patent/GB1251088A/en not_active Expired
- 1969-03-11 DE DE19691912192 patent/DE1912192A1/de active Pending
- 1969-03-12 ES ES364658A patent/ES364658A1/es not_active Expired
- 1969-03-12 BE BE729763D patent/BE729763A/xx unknown
- 1969-03-13 FR FR6907185A patent/FR2009809B1/fr not_active Expired
- 1969-03-13 SE SE6903523A patent/SE389428B/xx unknown

Also Published As

Publication number	Publication date
BE729763A (es)	1969-08-18
GB1251088A (es)	1971-10-27
IE32763B1 (en)	1973-11-28
IE32763L (en)	1969-09-13
SE389428B (sv)	1976-11-01
FR2009809A1 (es)	1970-02-13
US3584270A (en)	1971-06-08
DE1912192A1 (de)	1969-10-02
FR2009809B1 (es)	1973-10-19

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