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ES337433A1 - Metodo de fabricacion de un dispositivo semiconductor. - Google Patents

Metodo de fabricacion de un dispositivo semiconductor.

Info

Publication number
ES337433A1
ES337433A1 ES337433A ES337433A ES337433A1 ES 337433 A1 ES337433 A1 ES 337433A1 ES 337433 A ES337433 A ES 337433A ES 337433 A ES337433 A ES 337433A ES 337433 A1 ES337433 A1 ES 337433A1
Authority
ES
Spain
Prior art keywords
oxide
regions
heating
layer
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES337433A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES337433A1 publication Critical patent/ES337433A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/117Oxidation, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
ES337433A 1965-06-05 1967-03-01 Metodo de fabricacion de un dispositivo semiconductor. Expired ES337433A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL656507231A NL149640B (nl) 1965-06-05 1965-06-05 Halfgeleiderinrichting met meer dan een schakelelement in een halfgeleiderlichaam en werkwijze voor het vervaardigen daarvan.

Publications (1)

Publication Number Publication Date
ES337433A1 true ES337433A1 (es) 1968-02-16

Family

ID=19793311

Family Applications (2)

Application Number Title Priority Date Filing Date
ES0327508A Expired ES327508A1 (es) 1965-06-05 1966-06-03 Dispositivo semiconductor que tiene una pluralidad de elementos de circuito formados sobre el mismo cuerpo semiconductor.
ES337433A Expired ES337433A1 (es) 1965-06-05 1967-03-01 Metodo de fabricacion de un dispositivo semiconductor.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES0327508A Expired ES327508A1 (es) 1965-06-05 1966-06-03 Dispositivo semiconductor que tiene una pluralidad de elementos de circuito formados sobre el mismo cuerpo semiconductor.

Country Status (9)

Country Link
US (1) US3580745A (es)
AT (1) AT299309B (es)
BE (1) BE682092A (es)
CH (1) CH509669A (es)
DE (1) DE1564406C3 (es)
ES (2) ES327508A1 (es)
GB (1) GB1147205A (es)
NL (1) NL149640B (es)
SE (1) SE344657B (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015281A (en) * 1970-03-30 1977-03-29 Hitachi, Ltd. MIS-FETs isolated on common substrate
US3861969A (en) * 1970-03-31 1975-01-21 Hitachi Ltd Method for making III{14 V compound semiconductor devices
US4003071A (en) * 1971-09-18 1977-01-11 Fujitsu Ltd. Method of manufacturing an insulated gate field effect transistor
US4116721A (en) * 1977-11-25 1978-09-26 International Business Machines Corporation Gate charge neutralization for insulated gate field-effect transistors
US4140548A (en) * 1978-05-19 1979-02-20 Maruman Integrated Circuits Inc. MOS Semiconductor process utilizing a two-layer oxide forming technique
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione

Also Published As

Publication number Publication date
CH509669A (de) 1971-06-30
AT299309B (de) 1972-06-12
BE682092A (es) 1966-12-05
NL6507231A (es) 1966-12-06
NL149640B (nl) 1976-05-17
GB1147205A (en) 1969-04-02
SE344657B (es) 1972-04-24
DE1564406A1 (de) 1969-09-25
DE1564406C3 (de) 1978-10-12
DE1564406B2 (de) 1978-02-09
US3580745A (en) 1971-05-25
ES327508A1 (es) 1967-07-16

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